Ultrawide bandgap materials

KAUST-CEMSE-ECE-PhD-Dissertation-Defense-Dhanu-Chetri-Ultrawide-Bandgap-Semiconductor-Devices-and-Monolithic-Circuits

Ultrawide Bandgap Semiconductor Devices and Monolithic Circuits

Dhanu Chettri, Ph.D. Student, Electrical and Computer Engineering

Feb 17, 08:30 - 09:30

B3 L5 R5220

advanced semiconductors Ultrawide bandgap materials CMOS electronics Transistors Gallium oxide Aluminium nitride

This thesis investigates the potential of ultrawide bandgap (UWBG) semiconductors like gallium oxide (Ga2O3) and aluminium nitride (AlN) for high-power applications, focusing on the development of monolithic devices and circuits, including pseudo-CMOS inverters, bidirectional switches, and MOSFETs, demonstrating their potential for next-generation electronics operating in extreme environments.

Tingang Liu

Ph.D. Student, Electrical and Computer Engineering

Ultrawide bandgap materials AlN epitaxy power devices

Tingang Liu is a Ph.D. student at the Advanced Semiconductor Laboratory, focusing on ultrawide bandgap semiconductors especially AlN epitaxy by MOCVD and power device fabrications.

Haicheng Cao

Postdoctoral Research Fellow, Applied Mathematics and Computational Sciences

Ultrawide bandgap materials semiconductor device

KAUST-CEMSE-ECE-ASL-Dhanu-Chettri-0561

Dhanu Chettri

Ph.D. Student, Electrical and Computer Engineering

Ultrawide bandgap materials Gallium oxide Aluminium nitride Transistors