Gallium oxide

A new interface for efficient electronics

1 min read · Tue, Apr 8 2025

Gallium oxide advanced semiconductors

Two forms of gallium oxide come together in a "phase heterojunction" to create a sensitive ultraviolet detector.

KAUST-CEMSE-ECE-PhD-Dissertation-Defense-Dhanu-Chetri-Ultrawide-Bandgap-Semiconductor-Devices-and-Monolithic-Circuits

Ultrawide Bandgap Semiconductor Devices and Monolithic Circuits

Dhanu Chettri, Ph.D. Student, Electrical and Computer Engineering

Feb 17, 08:30 - 09:30

B3 L5 R5220

advanced semiconductors Ultrawide bandgap materials CMOS electronics Transistors Gallium oxide Aluminium nitride

This thesis investigates the potential of ultrawide bandgap (UWBG) semiconductors like gallium oxide (Ga2O3) and aluminium nitride (AlN) for high-power applications, focusing on the development of monolithic devices and circuits, including pseudo-CMOS inverters, bidirectional switches, and MOSFETs, demonstrating their potential for next-generation electronics operating in extreme environments.

KAUST-CEMSE-ECE-ASL-Dhanu-Chettri-0561

Dhanu Chettri

Ph.D. Student, Electrical and Computer Engineering

Ultrawide bandgap materials Gallium oxide Aluminium nitride Transistors