About Pavel Kirilenko Pavel Kirilenko Ph.D. Student, Electrical and Computer Engineering Articles Related News April 2024 Paper accepted in Phys. Status Solidi A! 1 min read · Fri, Apr 5 2024 News We report a selective passivation of p-GaN via hydrogen plasma treatment for InGaN single-quantum-well red light-emitting diodes. December 2023 Prestigious international awards for KAUST ECE students 5 min read · Tue, Dec 12 2023 Awards News KAUST ECE students shine bright, winning prestigious international awards. November 2023 Congratulations! Pavel's paper has been selected for the JSAP Young Scientist Award! 1 min read · Fri, Nov 17 2023 News His first authored paper "InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall, Appl. Phys. Expres 15 (2022) 084003" has been selected for the JSAP Young Scientist Award! The JSAP Young Scientist Award is presented to young researchers who have mainly authored excellent papers that are expected to contribute to the progress of applied physics. March 2023 Received the Japan Society of Applied Physics (JSAP) Outstanding Paper Award 2022! 1 min read · Thu, Mar 16 2023 News Professor Kazuhiro Group recently received the Japan Society of Applied Physics (JSAP) Outstanding Paper Award 2022. According to the JSAP, the award is presented to “the authors of outstanding papers published in the membership journal, Oyo Buturi, Japanese Journal of Applied Physics, and Applied Physics Express. These awards honor the authors of papers that are regarded as exceptional achievements in applied physics.” Paper accepted in AIP Advances! 1 min read · Fri, Mar 10 2023 News We have grown high-crystallinity InGaN layers on ScAlMgO4 (SAM) substrates using metalorganic vapor-phase epitaxy. We have prepared atomically flat SAM substrates by cleaving them along the c-plane and have utilized direct InGaN growth without any low-temperature buffer layer. The resulting InGaN layer has a distinct hexagonal hillock morphology and remarkable crystalline quality. December 2022 Paper accepted in Crystals (special issue of the 30th anniversary of Shuji Nakamura’s Contribution to Blue LEDs ) 1 min read · Wed, Dec 7 2022 News We have developed a new LED structure by using hydrogen passivation. The result is accepted in Crystals to the Special Issue "In Celebration of the 30th Anniversary of Shuji Nakamura’s Contribution to Blue Light-emitting Diodes”. The new device showed higher EQE and WPE compared to the conventional LED structures. September 2022 Selected as “Highlighted talk” at the Autumn meeting of Japanese Society of Applied Physics. 1 min read · Tue, Sep 13 2022 News Our Scheduled presentation is selected as “Highlighted talk” at the Autumn meeting of the Japanese Society of Applied Physics. Mohammed Najmi et al., “Structural analysis of N-polar InGaN layer grown on ScAlMgO4 substrate without buffer layer” 23a-E202-10 from 11:45 am March 23 (JPN time) The ratio of the highlighted talks in this conference is usually less than 1%. July 2022 InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall 1 min read · Thu, Jul 7 2022 News We investigated the effect of the sidewall passivation by hydrogen plasma on the InGaN green micro-LED performance. Hydrogen passivation deactivates the surface region of p-GaN around the perimeter of the device mesa. Thus, hole injection is suppressed in this region, where etchingcaused material degradation results in leakage current, decreasing device efficiency. We have confirmed the hydrogen passivation effect on LED square pixels with sizes of 20 and 100 μm. For smaller LEDs, the reverse leakage current has reduced more than tenfold, and the external quantum efficiency of LEDs was enhanced 1.4-times due to the suppression of the non-radiative recombination. June 2022 Paper accepted in AIP Advances! This paper has been chosen as an Editor's Pick. Congratulations! 1 min read · Wed, Jun 8 2022 News We report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on conventional c-plane-patterned sapphire substrates. The packaged LED's external quantum efficiency, light-output power, and forward voltage with a 621 nm peak emission wavelength at 20 mA (10.1 A/cm2) injection current were 4.3%, 1.7 mW, and 2.96 V, respectively. This design development represents a valuable contribution to the next generation of micro-LED displays. This paper has been chosen as an Editor's Pick. May 2022 Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4(0001) substrate 1 min read · Mon, May 2 2022 News We demonstrated a high crystalline quality of N-polar InGaN layer grown on ScAlMgO4 substrates by metalorganic vapor-phase epitaxy. The results show that the interface between N-polar InGaN and SAM occurs between the O atoms of the O–Sc SAM surface and the (Ga,In) atoms of InGaN. March 2022 Congratulations! Selected as “Highlighted talk” at the Spring meeting of Japanese Society of Applied Physics in Spring 2022. 1 min read · Wed, Mar 9 2022 News Our Scheduled presentation is selected as “Highlighted talk” at the Spring meeting of the Japanese Society of Applied Physics in Spring 2022. Daisuke Iida et al., “” 23a-E202-10 from 11:45 am March 23 (JPN time) The ratio of the highlighted talks in this conference is usually less than 1%. January 2022 Passivation of Surface States in GaN by NiO Particles 1 min read · Thu, Jan 27 2022 News we characterized the surface states in GaN by EIS analyses and demonstrated that NiO particles deposited directly on GaN passivate them. These surface states are generated by the electronic bindings of superficial Ga atoms, and the interaction of those atoms with NiO modifies its chemical structure, as demonstrated by XPS measurements. September 2021 Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes 1 min read · Thu, Sep 9 2021 News The paper reports the investigation of the electroluminescence properties of the additional peak in the EL spectrum of InGaN-based red LED structure. These results were helpful for understanding the EL performance of the red InGaN QWs and may be useful as guidelines to improve the quality of high-In-content QWs in the future. August 2021 Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays 1 min read · Mon, Aug 23 2021 News The paper reports the luminescence improvement of InGaN-based red LEDs by introducing a micro-hole array. This technique provides the improvement of the internal quantum efficiency and light extraction efficiency. The InGaN-based red LEDs are very attractive for next-generation micro-LED display, because the material is a family of blue and green LEDs. Top Cited Paper Award (Saudi Arabia) from IOP Publishing 1 min read · Fri, Aug 13 2021 News As one of the most cited articles from Saudi Arabia published across the entire IOP Publishing journal portfolio in 2020, using citations recorded in Web of Science “Demonstration of low forward voltage InGaN-based red LEDs” D. Iida, Z. Zhuang, P. Kirilenko, M. Velazquez-Rizo, and K. Ohkawa, Applied Physics Express 13, 031001 (2020).
Paper accepted in Phys. Status Solidi A! 1 min read · Fri, Apr 5 2024 News We report a selective passivation of p-GaN via hydrogen plasma treatment for InGaN single-quantum-well red light-emitting diodes.
Prestigious international awards for KAUST ECE students 5 min read · Tue, Dec 12 2023 Awards News KAUST ECE students shine bright, winning prestigious international awards.
Congratulations! Pavel's paper has been selected for the JSAP Young Scientist Award! 1 min read · Fri, Nov 17 2023 News His first authored paper "InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall, Appl. Phys. Expres 15 (2022) 084003" has been selected for the JSAP Young Scientist Award! The JSAP Young Scientist Award is presented to young researchers who have mainly authored excellent papers that are expected to contribute to the progress of applied physics.
Received the Japan Society of Applied Physics (JSAP) Outstanding Paper Award 2022! 1 min read · Thu, Mar 16 2023 News Professor Kazuhiro Group recently received the Japan Society of Applied Physics (JSAP) Outstanding Paper Award 2022. According to the JSAP, the award is presented to “the authors of outstanding papers published in the membership journal, Oyo Buturi, Japanese Journal of Applied Physics, and Applied Physics Express. These awards honor the authors of papers that are regarded as exceptional achievements in applied physics.”
Paper accepted in AIP Advances! 1 min read · Fri, Mar 10 2023 News We have grown high-crystallinity InGaN layers on ScAlMgO4 (SAM) substrates using metalorganic vapor-phase epitaxy. We have prepared atomically flat SAM substrates by cleaving them along the c-plane and have utilized direct InGaN growth without any low-temperature buffer layer. The resulting InGaN layer has a distinct hexagonal hillock morphology and remarkable crystalline quality.
Paper accepted in Crystals (special issue of the 30th anniversary of Shuji Nakamura’s Contribution to Blue LEDs ) 1 min read · Wed, Dec 7 2022 News We have developed a new LED structure by using hydrogen passivation. The result is accepted in Crystals to the Special Issue "In Celebration of the 30th Anniversary of Shuji Nakamura’s Contribution to Blue Light-emitting Diodes”. The new device showed higher EQE and WPE compared to the conventional LED structures.
Selected as “Highlighted talk” at the Autumn meeting of Japanese Society of Applied Physics. 1 min read · Tue, Sep 13 2022 News Our Scheduled presentation is selected as “Highlighted talk” at the Autumn meeting of the Japanese Society of Applied Physics. Mohammed Najmi et al., “Structural analysis of N-polar InGaN layer grown on ScAlMgO4 substrate without buffer layer” 23a-E202-10 from 11:45 am March 23 (JPN time) The ratio of the highlighted talks in this conference is usually less than 1%.
InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall 1 min read · Thu, Jul 7 2022 News We investigated the effect of the sidewall passivation by hydrogen plasma on the InGaN green micro-LED performance. Hydrogen passivation deactivates the surface region of p-GaN around the perimeter of the device mesa. Thus, hole injection is suppressed in this region, where etchingcaused material degradation results in leakage current, decreasing device efficiency. We have confirmed the hydrogen passivation effect on LED square pixels with sizes of 20 and 100 μm. For smaller LEDs, the reverse leakage current has reduced more than tenfold, and the external quantum efficiency of LEDs was enhanced 1.4-times due to the suppression of the non-radiative recombination.
Paper accepted in AIP Advances! This paper has been chosen as an Editor's Pick. Congratulations! 1 min read · Wed, Jun 8 2022 News We report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on conventional c-plane-patterned sapphire substrates. The packaged LED's external quantum efficiency, light-output power, and forward voltage with a 621 nm peak emission wavelength at 20 mA (10.1 A/cm2) injection current were 4.3%, 1.7 mW, and 2.96 V, respectively. This design development represents a valuable contribution to the next generation of micro-LED displays. This paper has been chosen as an Editor's Pick.
Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4(0001) substrate 1 min read · Mon, May 2 2022 News We demonstrated a high crystalline quality of N-polar InGaN layer grown on ScAlMgO4 substrates by metalorganic vapor-phase epitaxy. The results show that the interface between N-polar InGaN and SAM occurs between the O atoms of the O–Sc SAM surface and the (Ga,In) atoms of InGaN.
Congratulations! Selected as “Highlighted talk” at the Spring meeting of Japanese Society of Applied Physics in Spring 2022. 1 min read · Wed, Mar 9 2022 News Our Scheduled presentation is selected as “Highlighted talk” at the Spring meeting of the Japanese Society of Applied Physics in Spring 2022. Daisuke Iida et al., “” 23a-E202-10 from 11:45 am March 23 (JPN time) The ratio of the highlighted talks in this conference is usually less than 1%.
Passivation of Surface States in GaN by NiO Particles 1 min read · Thu, Jan 27 2022 News we characterized the surface states in GaN by EIS analyses and demonstrated that NiO particles deposited directly on GaN passivate them. These surface states are generated by the electronic bindings of superficial Ga atoms, and the interaction of those atoms with NiO modifies its chemical structure, as demonstrated by XPS measurements.
Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes 1 min read · Thu, Sep 9 2021 News The paper reports the investigation of the electroluminescence properties of the additional peak in the EL spectrum of InGaN-based red LED structure. These results were helpful for understanding the EL performance of the red InGaN QWs and may be useful as guidelines to improve the quality of high-In-content QWs in the future.
Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays 1 min read · Mon, Aug 23 2021 News The paper reports the luminescence improvement of InGaN-based red LEDs by introducing a micro-hole array. This technique provides the improvement of the internal quantum efficiency and light extraction efficiency. The InGaN-based red LEDs are very attractive for next-generation micro-LED display, because the material is a family of blue and green LEDs.
Top Cited Paper Award (Saudi Arabia) from IOP Publishing 1 min read · Fri, Aug 13 2021 News As one of the most cited articles from Saudi Arabia published across the entire IOP Publishing journal portfolio in 2020, using citations recorded in Web of Science “Demonstration of low forward voltage InGaN-based red LEDs” D. Iida, Z. Zhuang, P. Kirilenko, M. Velazquez-Rizo, and K. Ohkawa, Applied Physics Express 13, 031001 (2020).
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