About Yi Lu Yi Lu Ph.D. Student, Electrical and Computer Engineering Yi Lu is a Ph.D. student at the Advanced Semiconductors Laboratory under the supervision of Prof. Xiaohang Li at King Abdullah University of Science and Technology (KAUST). Research Interests Yi's research interests include semiconductor thin films, optoelectronic, and power electronic. Events Presented Events Jun 4 - Jun 10, 2023 Ultrawide Bandgap Semiconductors Modeling, Epitaxy, Processing, and Applications for Ultraviolet Emission and Detection Yi Lu, Ph.D. Student, Electrical and Computer Engineering Jun 8, 14:30 - 16:30 B5 L5 R5209 Wide bandgap III-Nitride semiconductor blue light-emitting diodes (LED) development has spawned the prestigious Nobel Prize in Physics in 2014. Building upon this success, the scope of research has expanded to ultrawide bandgap semiconductors, which possess immense potential in the realm of ultraviolet (UV) photonics. These materials have gained attention for their applicability in various areas, such as public sterilization, solar-blind UV communication, and real-time UV monitoring. Apr 17 - Apr 23, 2022 Advanced ultrawide bandgap semiconductors for ultraviolet photonics Yi Lu, Ph.D. Student, Electrical and Computer Engineering Apr 17, 12:00 - 13:00 B9 L2 R2322 H1 advanced semiconductors The advancement of silicon semiconductor technology since the 1940s has been changing the world by redefining human living style and addressing global challenge of energy shortage. Since the 1960s, GaAs, InP research started to bring human beings into modern life with mobile communications and high-speed networks. When it goes to the 1980s, wide band gap semiconductors including GaN and SiC which have high breakdown field and high mobility, were demonstrated into high-power electronics as well as solid-state lighting.
Ultrawide Bandgap Semiconductors Modeling, Epitaxy, Processing, and Applications for Ultraviolet Emission and Detection Yi Lu, Ph.D. Student, Electrical and Computer Engineering Jun 8, 14:30 - 16:30 B5 L5 R5209 Wide bandgap III-Nitride semiconductor blue light-emitting diodes (LED) development has spawned the prestigious Nobel Prize in Physics in 2014. Building upon this success, the scope of research has expanded to ultrawide bandgap semiconductors, which possess immense potential in the realm of ultraviolet (UV) photonics. These materials have gained attention for their applicability in various areas, such as public sterilization, solar-blind UV communication, and real-time UV monitoring.
Advanced ultrawide bandgap semiconductors for ultraviolet photonics Yi Lu, Ph.D. Student, Electrical and Computer Engineering Apr 17, 12:00 - 13:00 B9 L2 R2322 H1 advanced semiconductors The advancement of silicon semiconductor technology since the 1940s has been changing the world by redefining human living style and addressing global challenge of energy shortage. Since the 1960s, GaAs, InP research started to bring human beings into modern life with mobile communications and high-speed networks. When it goes to the 1980s, wide band gap semiconductors including GaN and SiC which have high breakdown field and high mobility, were demonstrated into high-power electronics as well as solid-state lighting.
Related Sites Electrical and Computer Engineering (ECE) Advanced Semiconductor Laboratory (ASL) Related Content Articles 1 Events 2
