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GaN-based LED
Tae-Yong Park
Ph.D. Student,
Electrical and Computer Engineering
GaN-based LED
molecular beam epitaxy
III-nitride
Taeyong is now a PhD student at KAUST. His research interests include Molecular Beam Epitaxy, Large bandgap group- nitride and GaN, fabricate Micro Light emitting diode and photodetector Education Profile Ph.D. in Electrical Engineering at King Abdullah University of Science and Technology (KAUST), Saudi Arabia, Aug. 2020 - present M.S. in Materials System Engineering at Pukyong national university, Republic of Korea, Mar. 2018 - Feb. 2020 B.S. in Materials System Engineering at Pukyong national university, Republic of Korea, Mar. 2012 - Aug. 2017 Awards and Distinctions Award for Best
