PORT

UV light emitter – challenges and new approaches – an example of device oriented R&D at PORT

Prof. Detlef Hommel, Polish Center for Technology development, Wroclaw University

Aug 25, 12:00 - 13:00

B9 L2 H1

UV Emitter PORT

The Wroław Research Center EIT+ was established in 2007 and renamed in 2018 into Polish Center for technology Development. This year PORT became an institute of the Łukasiewicz Network having similar goals like the Fraunhofer Society in Germany as an applied center for R&D. The presentation will concentrate on my research projects on deep-UV emitters. Going from UV-B (320-280nm) to UV-C (280-200nm) the external quantum efficiency decreases drastically and no breakthrough was obtained here based on high-Al content AlGaN. New, unconventional material combinations are needed to overcome these problems. One idea here is to add a small amount of arsenic to (Al,Ga)N to shift the valence band upwards and to increase the hole concentrations which is crucial for increasing the efficiencies of UV-C emitters. Results will be presented confirming this approach. Another idea is connected with strain engineering by using w-BN. This will allow to shift the unwanted TE to TM transition towards larges bandgaps (higher Al-contents).