The paper entitled "Boron influence on band-gap and photoluminescence in BGaN grown on AlN" reports the investigation of the born influence on the bandgap in GaN measured by contactless electroreflectance (CER) spectroscopy.
This work is an international collaboration with Prof. Hommel group in Poland.
Journal of Applied Physics 127, 165703 (2020). DOI: 10.1063/1.5140413
This work is an international collaboration with Prof. Hommel group in Poland.
Journal of Applied Physics 127, 165703 (2020). DOI: 10.1063/1.5140413
The paper entitled "Boron influence on band-gap and photoluminescence in BGaN grown on AlN" reports the investigation of the born influence on the bandgap in GaN measured by contactless electroreflectance (CER) spectroscopy.
This work is an international collaboration with Prof. Hommel group in Poland.
Journal of Applied Physics 127, 165703 (2020). DOI: 10.1063/1.5140413