255. “High-Performance and Temperature-Stable InGaN Single-Quantum-Well Red Light-Emitting Diodes via Selective Hydrogen Passivation”
C. Altinkaya, P. Kirilenko, D. Iida, K. Ohkawa
Phys. Status Solidi A, 2400048 (2024).
254. "High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact"
Y. Sang, Z. Zhuang, K. Xing, D. Zhang, J. Yan, Z. Jiang, C. Li, K. Chen, Y. Ding, T. Tao, D. Iida, K. Wang, C. Li, K. Huang, K. Ohkawa, R. Zhang, B. Liu
Applied Physics Letters 124, 142103 (2024). (Selected as an Editor's Pick)
DOI: 10.1063/5.0190000
253. " Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs "
F.‑H. Hsiao, W.‑C. Miao, T.‑Yi.Lee, Y.‑H. Pai, Y.‑Y. Hung, D. Iida, C.‑L. Lin, C.‑W. Chow, G.‑R. Lin, K. Ohkawa, H.‑C. Kuo, Y.‑H. Hong
Scientific Reports 14, 7018 (2024).
DOI: 10.1038/s41598-024-57132-9
252. "InGaN-based Micro-LEDs: Enhancing Efficiency and Speed for Next-Generation Visible Light Communication Applications"
W.-T. Huang, T.-Y. Lee, F.-H. Hsiao, W.-C. Miao, D. Iida, K.-B. Hong, C.-C. Lin, F.-C. Chen, S.-W. Chang, R.-H. Horng, Y.-H. Hong, Y.-W. Huang, K. Ohkawa, H.-C. Kuo
Proc. SPIE 12886, Gallium Nitride Materials and Devices XIX, 1288606 (2024)
DOI: 10.1117/12.3000782
251. "Globalization in Photonics Research and Development"
T. K. Ng, A. Rjeb, M. A. Cox, S. J. Cordette, Y. Wan, I. Ashry, Q. Gan, A. Fratalocchi, K. Ohkawa, and B. S. Ooi
IEEE Photonics Journal 16, 0600209 (2024).
DOI: 10.1109/JPHOT.2023.3337312
250. "Characteristics of Stacked GaInN-Based Red, Green, and Blue Full-Color Monolithic μLED Arrays Connected via Tunnel Junctions"
T. Saito, N. Hasegawa, Y. Suehiro, N. Koide, T. Takeuchi, S. Kamiyama, D. Iida, K. Ohkawa, and M. Iwaya
Phys. Status Solidi A 2400026 (2024).
249. "Enhanced Efficiency InGaN/GaN Multiple Quantum Well Structures via Strain Engineering and Ultrathin Subwells Formed by V‑Pit Sidewalls"
F. Alreshidi, L.-R. Chen, M. Najmi, B. Xin, H. Alamoudi, G. Melinte, N. Wehbe, D. Iida, K. Ohkawa, T.-C. Lu, and I. S. Roqan
ACS Appl. Opt. Mater. 2, 220−229 (2024). (adopted as a cover page)
248. "Optimizing Al Composition in Barriers for InGaN Amber Micro-LEDs With High Wall-Plug Efficiency"
Y. Sang, Z. Zhuang, K. Xing, Z. Jiang, C. Li, F. Xu, D. Zhang, J. Yu, J. Zhao, T. Zhi, T. Tao, C. Li, K. Huang, K. Ohkawa, R. Zhang, and B. Liu
IEEE Electron Device Letters, 45, 76-79 (2024).
247. "Simultaneous Growth Strategy of High-Optical-Efficiency GaN NWs on a Wide Range of Substrates by Pulsed Laser Deposition"
D. Almalawi, S. Lopatin, P. R. Edwards, B. Xin, R. C. Subedi, M. A. Najmi, F. Alreshidi, A. Genovese, D. Iida, N. Wehbe, B. S. Ooi, K. Ohkawa, R. W. Martin, I. S. Roqan
ACS Omega 8, 46804−46815 (2023). (adopted as a cover page)
246. "Investigation of N-polar InGaN growth on misoriented ScAlMgO4 substrates"
M. A. Najmi, P. Kirilenko, D. Iida, K. Ohkawa
Scientific Reports 13, 19332 (2023).
DOI: 10.1038/s41598-023-46542-w
245. “The micro-LED roadmap: Status quo and prospects”
C.-C. Lin, Y.-R. Wu, H.-C. Kuo, M. S. Wong, S. P. DenBaars, S. Nakamura, A. Pandey, Z. Mi, P. Tian, K. Ohkawa, D. Iida, T. Wang, Y. Cai, J Bai, Z. Yang, Y. Qian, S.-T. Wu, J. Han, C. Chen, Z. Liu, B.-R. Hyun, J.-H. Kim, B. Jang, H.-D. Kim, H.-J. Lee, Y.-T. Liu, Y.-H. Lai, Y.-L. Li, W. Meng, H. Shen, B. Liu, X. Wang, K.-l. Liang, C.-J. Luo and Y.-H. Fang
Journal of Physics: Photonics 5, 042502 (2023).
244. "RGB monolithic GaInN-based μLED arrays connected via tunnel junctions"
T. Saito, N. Hasegawa, K. Imura, Y. Suehiro, T. Takeuchi, S. Kamiyama, D. Iida, K. Ohkawa, and M. Iwaya
Applied Physics Express 16, 084001 (2023).
DOI: 10.35848/1882-0786/aced7c
243. "Towards the quantification of the chemical mechanism of light-driven water splitting on GaN photoelectrodes"
A. Shushanian, D. Iida, Y. Han, K. Ohkawa
Chem. Commun. 59, 10608-10611 (2023).
DOI: 10.1039/D3CC03387B
242. “Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications”
F.‑H. Hsiao, T.‑Y. Lee, W.‑C. Miao, Y.‑H. Pai, D. Iida, C.‑L. Lin, F.‑C. Chen, C.‑W. Chow, C.‑C. Lin, R.‑H. Horng, J.‑H. He, K. Ohkawa, Y.‑H. Hong, C.‑Y. Chang, H.‑C. Kuo
Discover Nano 18, 95 (2023).
DOI: 10.1186/s11671-023-03871-z
241. "Improvement of optical properties of InGaN-based red multiple quantum wells"
X. Hou, T. Yang, S.-S. Fan, H. Xu, D. Iida, Y.-J. Liu, Y. Mei, G.-E. Weng, S.-Q. Chen, B.-P. Zhang, K. Ohkawa
Optics Express 31, 18567 (2023).
DOI: 10.1364/OE.488681
240. "Structural and optical analyses for InGaN‑based red micro‑LED"
F.‑H. Hsiao, W.‑C. Miao, Y.‑H. Hong, H. Chiang, I‑H. Ho, K.‑B. Liang, D. Iida, C.‑L. Lin, H. Ahn, K. Ohkawa, C.‑Y. Chang, H.‑C. Kuo
Discover Nano 18, 77 (2023).
DOI: 10.1186/s11671-023-03853-1
239. "High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4 substrates"
P. Kirilenko, M. A. Najmi, B. Ma, A. Shushanian, M. Velazquez-Rizo, D. Iida, and K. Ohkawa
AIP Advances 13, 045011 (2023).
DOI: 10.1063/5.0136205
238. "Low-temperature direct electrochemical splitting of H2S"
M. Velazquez-Rizo and A. C. Cavazos Sepulveda
Front. Chem. Eng. 4:1087435 (2023).
DOI: 10.3389/fceng.2022.1087435
237. "Chemical and morphological characterization of the anodic oxidation of n-GaN in inorganic electrolytes"
A. Shushanian, D. Iida, Y. Han, and K. Ohkawa
New J. Chem. 46, 23013-23018 (2022). (adopted as a cover page)
DOI: 10.1039/D2NJ04740C
236. "Performance Improvement of InGaN-Based LEDs via a Current-Blocking Region Prepared via Hydrogen Passivation"
P. Kirilenko, C. Altinkaya, D. Iida and K. Ohkawa
235. "二波長ラマン散乱分光を用いたInGaN/GaNヘテロ構造における
フォノン輸送解析"
石谷善博 , 中山朋哉, 伊藤航太郎, 馬 蓓, 飯田大輔, Mohammed A. Najmi, 大川和宏
日本結晶成長学会誌, 48, No. 4 (2022).
234. "High-efficiency InGaN red micro-LEDs for visible light communication"
Y-M. Huang, C.-Y. Peng, W-C. Miao, H. Chiang, T-Y. LEE, Y-H. Chang, K. J. Singh, D. Iida, R-H. Horng, C-W. Chow, C-C. Lin, K. Ohkawa, S-C. Chen, and H-C. Kuo
Photonics Research 10, 1978-1986 (2022).
DOI: 10.1364/PRJ.462050
233. "InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall"
P. Kirilenko, D. Iida, Z. Zhuang, and K. Ohkawa
Applied Physics Express 15, 084003 (2022).
DOI: 10.35848/1882-0786/ac7fdc
232. "InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes"
W. Ou, Y. Mei, D. Iida, H. Xu, M. Xie, Y. Wang, L. Ying, B. Zhang, and K. Ohkawa
Journal of Lightwave Technology 40, 4337-4343 (2022).
231. "Analysis of phonon transport through heterointerfaces of InGaN/GaN via Raman imaging using double-laser system: The effect of crystal defects at heterointerface"
T. Nakayama, K. Ito, B. Ma, D. Iida, M. A. Najmi, K. Ohkawa, Y. Ishitani
Materials Science in Semiconductor Processing 150, 106905 (2022).
DOI:10.1016/j.mssp.2022.106905
230. "Optical Properties of InGaN-Based Red Multiple Quantum Wells"
X. Hou, S.-S. Fan, H. Xu, D. Iida, Y.-J. Liu, Y. Mei, G.-E. Weng, S.-Q. Chen, B.-P. Zhang, and K. Ohkawa
Applied Physics Letters 120, 261102 (2022).
DOI: 10.1063/5.0096155
229. "MOVPE成長InGaN量子井戸赤色LEDの高効率化"
K. Ohkawa
Chapter 1.4.3.2 in the book of “光技術動向調査報告書 FY2021-002-1“ from 一般財団法人光産業技術振興協会
228. "Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2"
D. Iida, P. Kirilenko, M. Velazquez-Rizo, Z. Zhuang, M. A. Najmi, and K. Ohkawa
AIP Advances 12, 065125 (2022). (Selected as an Editor's Pick)
DOI: 10.1063/5.0097761
227. "Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4(0001) substrate"
M. Velazquez-Rizo, M. A. Najmi , D. Iida , P. Kirilenko , and K. Ohkawa
Applied Physics Express 15, 065501 (2022).
DOI: 10.35848/1882-0786/ac6c1a
226. "Analysis of n-GaN electrochemical etching process and its mechanism in oxalic acid"
A. Shushanian, D. Iida, Z. Zhuang, Y. Han and K. Ohkawa
RSC Adv. 12, 4648 (2022).
DOI: 10.1039/d1ra07992a
225. "Passivation of Surface States in GaN by NiO Particles"
M. Velazquez-Rizo, P. Kirilenko, D. Iida, Z. Zhuang and K. Ohkawa
Crystals 12, 211 (2022).
224. "Study on the effect of size on InGaN red micro‑LEDs"
R.‑H. Horng, C.‑X. Ye, P.‑W. Chen, D. Iida, K. Ohkawa, Y.‑R. Wu, and D.‑S. Wuu
Sci. Rep. 12, 1324 (2022).
DOI: 10.1038/s41598-022-05370-0
223. "InGaN-based red light-emitting diodes: from traditional to micro-LEDs"
Z. Zhuang, D. Iida, and K. Ohkawa
Japanese Journal of Applied Physics 61, SA0809 (2022). (Invited review)
DOI: 10.35848/1347-4065/ac1a00
222. "Recent progress in red light-emitting diodes by III-nitride materials"
D. Iida, and K. Ohkawa
Semiconductor Science and Technology 37, 013001 (2021). (Invited review)
221. "Ultrasmall and ultradense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixilation of conductive p-GaN"
Z. Zhuang, D. Iida, and K. Ohkawa
Photonics Research 9, 2429-2434 (2021).
DOI: 10.1364/PRJ.439741
220. "Ultra-small InGaN green micro-light-emitting diodes fabricated by selective passivation of p-GaN"
Z. Zhuang, D. Iida, M. Velazquez-Rizo, and K. Ohkawa
Optics Letters 46, 5092-5095 (2021).
DOI: 10.1364/OL.438009
219. "Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes"
P. Kirilenko, Z. Zhuang, D. Iida, M. Velazquez-Rizo, and K. Ohkawa
Crystals 11, 1123 (2021).
DOI: 10.3390/csyst11091123
218. "Photoluminescence of InGaN-based red multiple quantum wells"
X. Hou, S. Fan, D. Iida, Y. Mei, B. Zhang, and K. Ohkawa
Optics Express 29, 30237 (2021).
DOI: 10.1364/OE.439025
217. "Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays"
Z. Zhuang, D. Iida, P. Kirilenko, and K. Ohkawa
Optics Express 29, 29780 (2021).
DOI: 10.1364/OE.435556
216. "630-nm red InGaN micro-light-emitting diodes (< 20 × 20 µm2) exceeding 1 mW/mm2 for full-color micro-displays"
Z. Zhuang, D. Iida, M. Velazquez-Rizo, and K. Ohkawa
Photonics Research 9, 1796-1802 (2021).
DOI: 10.1364/PRJ.428168
215. "Atomistic origin of compositional pulling effect in wurtzite (B, Al, In)xGa1-xN : A first-principles study"
Hiroshi Mizuseki, Jessiel Gueriba, Melvin John F. Empizo, Nobuhiko Sarukura, Yoshiyuki Kawazoe, Kazuhiro Ohkawa
Journal of Applied Physics 130, 035704 (2021).
DOI: 10.1063/5.0050102
214. "606-nm InGaN Amber Micro-Light-Emitting Diodes With on On-Wafer External Quantum Efficiency of 0.56%"
Z. Zhuang, D. Iida, M. Velazquez-Rizo, and K. Ohkawa
IEEE Electron Device Letters 42, 1029-1032 (2021).
DOI: 10.1109/LED.2021.3080985
213. "Investigation of InGaN-based red/green micro-light-emitting diodes"
Z. Zhuang, D. Iida, and K. Ohkawa
Optics Letters 46, 1912-1915 (2021). (Ranked in "Top Downloads" during April-June 2021)
DOI: 10.1364/OL.422579
212. "Analysis of LO phonon properties in III-nitrides: interaction with carriers and microscopic analysis"
Y. Ishitani, K. Oki, M. Chizaki, S. Okamoto, T. Nakayama, B. Lin, B. Ma, K. Morita, H. Miyake, D. Iida, K. Ohkawa
Proc. of SPIE 11686, Gallium Nitride Materials and Devices XVI, 116861Y (2021). (Invited paper)
DOI: 10.1117/12.2576776
211. “Simulation of Nitride Semiconductor MOVPE”
K. Ohkawa
Encyclopedia of Applied Physics, EAP941, Wiley, 2020.
DOI: 10.1002/3527600434.eap941
210. “Local heat energy transport analyses in gallium-indium-nitride/gallium nitride heterostructure by microscopic Raman imaging exploiting simultaneous irradiation of two laser beams”
S. Okamoto, N. Saito, K. Ito, B. Ma, K. Morita, D. Iida, K. Ohkawa, Y. Ishitani
Proceedings of the ASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, IPACK2020-2570, V001T06A002 (2020).
209. “Micro-LED displays: New Opportunities for Nitride-Based Red LED Technologies”
A. Nishikawa and K. Ohkawa
LED Professional Review, issue 82, pp.58-61, Nov/Dec 2020.
URL: https://www.led-professional.com/lpr-magazine
208. "High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits"
D. Iida, Z. Zhuang, P. Kirilenko, M. Velazquez-Rizo and K. Ohkawa
Appl. Phys. Lett. 117, 172103 (2020).
DOI: 10.1063/5.0026017
207. "Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes"
Z. Zhuang, D. Iida, and K. Ohkawa
Optics Express 28, 30424 (2020).
DOI: 10.1364/OE.403168
206. "Photoelectrochemical and crystalline properties of a GaN photoelectrode loaded with α-Fe2O3 as cocatalyst"
M. Velazquez-Rizo, D. Iida, and K. Ohkawa
Sci. Rep. 10, 12586 (2020).
DOI: 10.1038/s41598-020-69419-8
205. "Boron influence on bandgap and photoluminescence in BGaN grown on AlN"
E. Zdanowicz, D. Iida, L. Pawlaczyk, J. Serafinczuk, R. Szukiewicz, R. Kudrawiec, D. Hommel, and K. Ohkawa
J. Appl. Phys. 127, 165703 (2020).
DOI: 10.1063/1.5140413
204. "Effects of size on the electrical and optical properties of InGaN-based red light-emitting diodes"
Z. Zhuang, D. Iida, and K. Ohkawa
Appl. Phys. Lett. 116, 173501 (2020). (Selected as an Editor's Pick)
DOI: 10.1063/5.0006910
203. "633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress"
D. Iida, Z. Zhuang, P. Kirilenko, M. Velazquez-Rizo, M. A. Najmi, and K. Ohkawa
Appl. Phys. Lett. 116, 162101 (2020).
DOI: 10.1063/1.5142538
202. "Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes"
Z. Zhuang, D. Iida, P. Kirilenko, M. Velazquez-Rizo, and K. Ohkawa
Optics Express 28, 12311 (2020).
DOI: 10.1364/OE.389725
201. "Energy transport analysis in a Ga0.84In0.16N/GaN heterostructure using microscopic Raman images employing simultaneous coaxial irradiation of two lasers"
S. Okamoto, N. Saito, K. Ito, B. Ma, K. Morita, D. Iida, K. Ohkawa, and Y. Ishitani
Applied Physics Letters 116, 142107 (2020). (Selected as an Editor's Pick)
DOI: 10.1063/5.0003491
200. "Demonstration of low forward voltage InGaN-based red LEDs"
D. Iida, Z. Zhuang, P. Kirilenko, M. Velazquez-Rizo, and K. Ohkawa
Applied Physics Express 13, 031001 (2020). (Top Cited Paper Award (Saudi Arabia) from IOP Publishing, and Ranked in Most Read)
199. “A stand-alone module for solar-driven H2 production coupled with redox-mediated sulfide remediation”
K. Obata, Y. Shinohara, S. Tanabe, I. Waki, K. Kotsovos, K. Ohkawa, K. Takanabe
Energy Technology 7, 1900575 (2019).
198. "Investigation of the p-GaN layer thickness of InGaN-based photoelectrodes for photoelectrochemical hydrogen generation"
D. Iida, T. Shimizu, and K. Ohkawa
Japanese Journal of Applied Physics 58, SCCC32 (2019).
DOI: https://doi.org/10.7567/1347-4065/ab09d7
197. "Photoelectrochemical H2 generation from water using a CoOx/GaN photoelectrode"
M. Velazquez-Rizo, D. Iida, K. Ohkawa
Japanese Journal of Applied Physics 58, SCCC23 (2019).
DOI: https://doi.org/10.7567/1347-4065/ab0f1d
196. "Influence of polymerization among Al- and Ga-containing molecules on growth rate and Al content in AlGaN "
K. Ohkawa, K. Nakamura, A. Hirako, D. Iida
Journal of Crystal Growth 516, pp.17–20 (2019).
195. "Photoelectrochemical hydrogen generation using graded In-content InGaN photoelectrode structures"
K. Ohkawa, Y. Uetake, M. Velazquez-Rizo, D. Iida
Nano Energy 59, pp.569–573 (2019).
DOI: j.nanoen.2019.03.011
194. "Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys"
K. Ohkawa, F. Ichinohe, T. Watanabe, K. Nakamura, D. Iida
Journal of Crystal Growth 512, pp.69-73 (2019).
193. "Efficiency enhancement of InGaN amber MQWs using nanopillar structures"
Y. Ou, D. Iida, J. Liu, K. Wu, K. Ohkawa, A. Boisen, P. M. Petersen, H. Ou
Nanophotonics 7, pp.317-312 (2018).
DOI: nanoph-2017-0057
192. “Demonstration of InGaN-based orange LEDs with hybrid multiple-quantum-wells structure”
D. Iida, K. Niwa, S. Kamiyama, K. Ohkawa
Applied Physics Express 9, 111003 (2016).
191. “Wireless InGaN-Si/Pt device for photo-electrochemical water splitting”
T. Sekimoto, H. Hashiba, S. Shinagawa, Y. Uetake, M. Deguchi, S. Yotsuhashi, K. Ohkawa
Japanese Journal of Applied Physics 55, 088004, pp.1-3 (2016).
190. “Analysis of Products from Photoelectrochemical Reduction of 13CO2 by GaN-Si Based Tandem Photoelectrode”
T. Sekimoto, H. Hashiba, S. Shinagawa, Y. Uetake, M. Deguchi, S. Yotsuhashi, K. Ohkawa
The Journal of Physical Chemistry, 120, pp.13970-13975 (2016).
189. “有機金属気相エピタキシャル成長法（実践編）”
大川 和宏
応用物理学会結晶工学分科会結晶工学スクールテキスト第13版, pp.1-12 (2016).
188. “Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers”
D. Iida, S. Lu, S. Hirahara, K. Niwa, S. Kamiyama, K. Ohkawa
Journal of Crystal Growth 448, pp.105-108 (2016).
187. “Investigation of amber light-emitting diodes based on InGaN/AlN/AlGaN quantum wells”
D. Iida, S. Lu, S. Hirahara, K. Niwa, S. Kamiyama, K. Ohkawa
Japanese Journal of Applied Physics 52, 08JB13pp.1-3 (2016).
186. “無機触媒による人工光合成および二酸化炭素還元”
四橋聡史、関本健之、羽柴寛、野田慶一、岡本慎也、出口正洋、大川和宏
太陽エネルギー(Journal of JSES), 41, pp.29-35 (2015).
185. “ Nitride Photocatalyst to Produce Clean Hydrogen from Water without Extra Bias”
K. Ohkawa
ECS Transactions, 66 , pp.135-138 (2015).
184. “Effects of intentional oxygen and carbon doping in MOVPE-grown GaN layers on photoelectric Properties”
Y. Wang, T. Teramoto, K. Ohkawa
physica status solidi (b) 252, pp.1116-1120 (2015).
183. “The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE”
Y. Wang, R. Shimma, T. Yamamoto, H. Hayashi, K. Shiohama, K. Kurihara, R. Hasegawa, K. Ohkawa
Journal of Crystal Growth 416, pp.164-168 (2015).
182. “InGaN photocatalysts on conductive Ga2O3 substrates”
T. Ogita, Y. Uetake, Y. Yamashita, A. Kuramata, S. Yamakoshi, K. Ohkawa
physica status solidi (a) 212, pp.1029-1032 (2015).
181. “Tandem photo-electrode of InGaN with two Si p-n junctions for CO2 conversion to HCOOH with the efficiency greater than biological photosynthesis”
T. Sekimoto, S. Shinagawa, Y. Uetake, K. Node, M. Deguchi, S. Yotsuhashi, K. Ohkawa
Applied Physics Letters 106, 073902, pp.1-4 (2015).
180. “Photoelectrochemical CO2 Conversion to Hydrocarbons Using an AlGaN/GaN-Si Tandem Photoelectrode”
M. Deguchi, S. Yotsuhashi, Y. Yamada, K. Ohkawa
Advances in Condensed Matter Physics, 537860, pp.1-4 (2015).
179. “炭化水素生成に向けた人工光合成装置の開発”
四橋聡史、出口正洋、山田由佳、大川和宏
光合成研究と産業応用最前線 第2編第4章第1節, pp.293-298 (2014).
178. “Blue LEDs: Helping to Save Earth”
K. Ohkawa
A Journal of the Association of Asia Pacific Physical Societies (AAPPS Bulletin), 24, No.6, pp.11-13 (2014).
177. “窒化ガリウム光電極を用いた水と二酸化窒素からの有機物合成”
四橋聡史、出口正洋、羽柴寛、山田由佳、大川和宏
水素エネルギーシステム 39, No.1, pp.17-23 (2014).
176. “窒化物半導体を用いた人工光合成システムの開発”
羽柴寛、四橋聡史、出口正洋、山田由佳、大川和宏
FC Report(日本ファインセラミック協会 会報）32巻 3号, pp.115-118 (2014).
175. “赤色LEDとそのInGaN発光層のMOVPE成長”
大川和宏
光電相互変換第125委員会 本委員会第225回研究会 JPC産業用LED応用研究会「2014年7月定例会」pp.5-10 (2014).
174. “Influence of working pressure on the crystal structural and photo-magneto-electric properties of TiO2 thin films”
Y. Wang, Z. Pei, T. Li, J. Xu, X. Zhao, K. Ohkawa
Journal of Optoelectronics・Laser vol. 24, pp.1110-1115 (2013).
173. “Effect of inserted Si p-n junction on GaN-based photo-electrochemical CO2 conversion system”
S. Yotsuhashi, M. Deguchi, Y. Yamada, K. Ohkawa
AIP Advances 4, 067135 pp.1-8 (2014).
172. “人工光合成による炭化水素生成システム”
四橋聡史、出口正洋、山田由佳、大川和宏
光アライアンス 43巻 6号, pp.272-274 (2014).
171. “窒化物半導体を用いた人工光合成システム”
四橋聡史、出口正洋、羽柴寛、山田由佳、大川和宏
光学 43巻 6号, pp.272-274 (2014).
170. “安全・安心な元素からなる人に優しいLED”
大川和宏
理大 科学フォーラム 356号, pp.30-31 (2014). (2014年2月号).
169. “MOVPE成長高In組成InGaN/InGaN多重量子井戸構造の発光スペクトルの温度依存性及び励起スペクトル”
長澤和輝、宮島顕祐、大川和宏
第24回光物性研究会 (2013).
168.
167. “窒化物半導体を光電極にした人工光合成”
四橋聡史、出口正洋、羽柴寛、山田由佳、大川和宏
MATERIAL STAGE vol. 13, No.5, pp.1-4 (2013).
166. “Selectivity Control of CO2 Reduction in an Inorganic Artificial Photosynthesis System”
H. Hashiba, S. Yotsuhashi, M. Deguchi, Y. Yamada, K. Ohkawa
Applied Physics Express 6, 097102 pp.1-4 (2013).
165. “Enhanced Capability of Photoelectrochemical CO2 Conversion System Using an AlGaN/GaN Photoelectrode”
M. Deguchi, S. Yotsuhashi, H. Hashiba, Y. Yamada, K. Ohkawa
Japanese Journal of Applied Physics 52, 08JF07 pp.1-5 (2013).
164. “Highly stable GaN photocatalyst for producing H2 gas from water”
K. Ohkawa, W. Ohara, D. Uchida, et al.
Japanese Journal of Applied Physics 52, 08JH04 pp.1-3 (2013).
163. “窒化物光触媒による高効率水素生成”
大川和宏
JILS平成23年度第3回懇談会 JILS Newsletter 70号 pp.1-9 (2013).
162. “ワイドギャップ半導体 あけぼのから最前線へ”（監修 吉川明彦）の第6章４節「窒化物半導体の光触媒機能 と水素エネルギー生成への応用」
大川和宏
培風館、pp.374-382 (2013).
161. “光半導体による人工光合成”
大川和宏
日本学術振興会 薄膜第131委員会 第263回研究会 (2012) pp.31-38 (2012).
160. “Highly efficient photochemical HCOOH production from CO2 and water using an inorganic system”
S. Yotsuhashi, H. Hashiba, M. Deguchi, Y. Zenitani, R. Hinogami, Y. Yamada, K. Ohkawa, et al.
AIP Advances 2, 042160, pp.1-5 (2012).
159. “Hydrogen Generation for 500 hours by Photoelectrolysis of Water using GaN”
W. Ohara, D. Uchida, T. Hayashi, K. Ohkawa, et al.
Materials Research Society Symposium proceedings 1446, pp.1-5 (2012).
158. “High Stability and Efficiency of GaN Photocatalyst for Hydrogen Generation from Water”
T. Hayashi, K. Ohkawa, et al.
Japanese Journal of Applied Physics 51, 112601 pp.1-3 (2012).
157.“OPTOELECTRONICS 2011(平成23)年度 光産業技術に関する報告書 光技術動向調査” 1.4 可視～紫外域 「GaN系光触 媒」
大川和宏
一般財団法人光産業技術振興協会、pp. 42-45 (2012).
156. “MOVPE成長におけるIn組成制御と全可視域InGaN系LEDの実現”
大川和宏, 他
応用電子物性分科会会誌 18-2, pp.57-60 (2012).
155. “Enhanced CO2 reduction capability in an AlGaN/GaN photoelectrode”
S. Yotsuhashi, M. Deguchi, H. Hashiba, Y. Zenitani, R. Hinogami, Y. Yamada, K. Ohkawa
Applied Physics Letters 100, 243904 pp.1-3 (2012).
154. “740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE”
K. Ohkawa, T. Watanabe, M. Sakamoto, A. Hirako, et al.
Journal of Crystal Growth 343, pp.13-16 (2012).
153. “CO2 conversion with light and water by GaN photoelectrode”
S. Yotsuhashi, M. Deguchi, Y. Zenitani, R. Hinogami, H. Hashiba, Y. Yamada, K. Ohkawa
Japanese Journal of Applied Physics 51, 02BP07 pp.1-3 (2012).
152. “Photo-induced CO2 reduction with GaN electrode in Aqueous System”
S. Yotsuhashi, M. Deguchi, Y. Zenitani, R. Hinogami, H. Hashiba, Y. Yamada, K. Ohkawa
Applied Physics Express 4, 117101pp.1-3 (2011).
151. “MOVPE成長InGaN系LEDの長波長化”
大川和宏
ワイドキャップ半導体光・電子デバイス第162委員会 第75回研究会資料, 40-45 (2011).
150. “Photoelectrochemical Properties of the p-n Junction in and near the Surface Depletion Region of n-Type GaN”
K. Fujii, M. Ono, Y. Iwaki, K. Sato, K. Ohkawa, and T. Yao
Journal of Physical Chemistry C 114, 22727-22735 (2010).
149.“有機金属気相エピタキシャル成長法（実践編）”
大川和宏
応用物理学会結晶工学分科会結晶工学ｽｸｰﾙﾃｷｽﾄ第10版, pp.35-45 (2010).
148.“Analysis of pulsed injection of precursors in AlN-MOVPE growth by computational fluid simulation”
K. Nakamura, A. Hirako, K. Ohkawa
physica status solidi (c) 7, pp.2268-2271 (2010).
147.“Electrooptic Effect of Water in Electric Double Layer at Interface of GaN Electrode”
H. Kanemaru, Y. Nosaka, A. Hirako, K. Ohkawa, T. Kobayashi, E. Tokunaga
Optical Review 17, pp.352-356 (2010).
146.“交互供給AlN-MOVPE 成長における気相種の熱化学流体解析”
中村健一, 平子晃, 大川和宏
日本材料学会半導体エレクトロニクス部門 平成21年度第1回研究会, (2009).
145.“窒化物半導体MOVPE成長の熱化学流体シミュレーション”
大川和宏, 平子晃
ワイドギャップ半導体光・電子デバイス第162委員会/結晶成長の科学と技術第161委員会 合同研究会資料, pp.19-24 (2009).
144.“Growth behavior of AlInGaN films”
J. Z. Shang, B. P. Zhang, M. H. Mao, L. E. Cai, J. Y. Zhang, Z. L. Fang, B. L. Liu, J. Z. Yu, Q. M. Wang, K. Kusakabe, K. Ohkawa
Journal of Crystal Growth 311, pp.474-477 (2009).
143.“Nitride photocatalyst to generate hydrogen gas from water”
Y. Iwaki, M. Ono, K. Yamaguchi, K. Kusakabe, K. Fujii ,K. Ohkawa
physica status solidi (c) 5, pp.2349-2351 (2008).
142.“Photoelectrochemical H2 Gas Generation Improvement with Thin p-type GaN Layer on n-type GaN”
K. Fujii, M. Ono, Y. Iwaki, T. Yao, K. Ohkawa
ECS Transactions 13, pp.177-183 (2008).
141.“Direct Observation of an Ordered Phase in (11-20) Plane InGaN Alloy”
K. Kusakabe, T. Yamazaki, K. Kuramochi, T. Furuzuki, I. Hashimoto, S. Ando, and K. Ohkawa
Japanese Journal of Applied Physics 47, pp.8783-8786 (2008).
140.“MOVPE法によるAlGaN結晶成長の熱流体計算解析”
平子晃 市川晶也 中村健一 大川和宏
信学技報 108巻 321号, pp.89-92 (2008).
139.“発光と受光の物理と応用”（監修 小林洋志）
第8章6節 “窒化物光触媒”
大川和宏
培風館, pp.342-348 (2008).
138.“An orthogonal surface phase in semipolar GaN/r-plane sapphire”
K. Kusakabe, D. Terui, T. Yamazaki, I. Hashimoto, and K. Ohkawa
Applied Physics Letters 92, 171912 pp.1-3 (2008).
137.“窒化物光触媒による水素発生”
大川和宏
工業材料 vol. 55, No.12, pp.69-71 (2007).
136.“Characterization and electrochemical properties of CF4 plasma-treated boron-doped diamond surfaces”
T. Kondo, H. Ito, K. Kusakabe, K. Ohkawa, K. Honda, Y. Einaga, A. Fujishima, T. Kawai
Diamond & Related Materials 17, pp.48-54 (2008).
135.“Photoelectrochemical Properties of Nonpolar and Semipolar GaN”
K. Fujii, Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, S. Nakamura, K. Ohkawa
Japanese Journal of Applied Physics 46, pp.6573-6578 (2007).
134.“水素利用技術集成 Vｏl. 3”
第3章5節 “窒化物光触媒による水素製造技術”
大川和宏
エヌ・ティー・エス, pp.240-248 (2007).
133.“Wide Bandgap Semiconductors” (edited by K. Takahashi, A. Yoshikawa and A. Sandhu) section 5.2.3 “Nitride Phtocatalysis”
K. Ohkawa
Springer, pp.311-327 (2007).
132.“窒化物光触媒による水素エネルギー製造”
大川和宏
マテリアルライフ学会誌 19, pp.67-71 (2007).
131.“Large misorientation of GaN films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy”
K. Kusakabe, S. Ando, K. Ohkawa
Journal of Crystal Growth 298, pp.293-296 (2007).
130.“Influence of Polymer Formation on Metalorganic Vapor-Phase Epitaxial Growth of AlN”
T. Uchida, K. Kusakabe, K. Ohkawa
Journal of Crystal Growth 304, pp.133-140 (2007).
129.“Plasma etching treatment for surface modification of boron-doped diamond electrodes”
T. Kondo, H. Ito, K. Kusakabe, K. Ohkawa, Y. Einaga, A. Fujishima, T. Kawai
Electrochimica acta 52, pp.3841-3848 (2007).
128.“Photoelectrochemical Reactions and H2 Generation at Zero Bias Optimized by Carrier Concentration of n-Type GaN”
M. Ono, K. Fujii, T. Ito, Y. Iwaki, A. Hirako, T. Yao, K. Ohkawa
Journal of Chemical Physics 126, 054708 pp.1-7 (2007).
127.“Investigation of Surface Morphology of n-type GaN after Photoelectrochemical Reaction in Various Solutions for H2 Gas Generation”
K. Fujii, T. Ito, M. Ono, Y. Iwaki, T. Yao, K. Ohkawa
physica status solidi (c) 4, pp.2650-2653 (2007).
126.“Cathodoluminescence characterization of (11-20)-oriented InGaN/GaN thin films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy ”
K. Kusakabe, T. Furuzuki, K. Ohkawa
physica status solidi (c) 4, pp.2544-2547 (2007).
125.“Band-edge Energies and Photoelectrochemical Properties of n-Type AlxGa1-xN and InyGa1-yN alloys”
K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, K. Ohkawa
Journal of the Electrochemical Society 154, pp.B175-B179 (2007).
124.“Fabrication and optical properties of blue LEDs with silica microsphere coating”
K. Kusakabe, S. Funazaki, K. Okamoto, S. Nishizawa, K. Ohkawa
physica status solidi (c) 4, pp.25-28 (2007).
123.“窒化物半導体を用いた水からの水素発生”
藤井克司, 大川和宏
日本学術振興会 光電相互変換 第125委員会 第194回研究会資料 pp.10-13 (2006).
122.“エレクトロニクス分野における熱制御、放熱・冷却技術［下巻］” （監修 石塚勝 渡辺聡志）
第７節［１］ “熱化学流体シミュレーションによる窒化物半導体成長の解析”
大川和宏
技術情報協会 pp. 205-214 (2006).
121.“窒化物光触媒”
大川和宏
会報 光触媒 （光機能材料研究会）20巻, pp.14-17 (2006).
120.“窒化物光触媒による水素発生”
大川和宏, 藤井克司
日本学術振興会 ワイドギャップ半導体光・電子デバイス 第162委員会 第46回研究会資料 pp.9-15 (2006).
119.“Characterization of lattice mosaic of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy”
K. Kusakabe, S. Ando, K. Ohkawa
Materials Research Society Symposium proceedings 892, pp.658-663 (2006).
118.“Charge transfer of n-type GaN photoelectrolysis in HCl solution for H2 gas generation at a counterelectrode”
K. Fujii, M. Ono, T. Ito, K. Ohkawa
Material Research Society Symposium Proceedings 0885-A11-04.1～04.6 (2006).
117.“有機金属気相エピタキシー法におけるGaN薄膜の成長シミュレーション”
大川和宏 平子晃 徳田耕太
真空 49, pp.520-524 (2006).
116.“Analysis of TMGa/NH3/H2 reaction system in GaN-MOVPE growth computational simulation”
A. Hirako, S. Koiso, K. Ohkawa
physica status solidi (a) 203, pp.1716-1719 (2006).
115.“Hydrogen generation from aqueous water using n-GaN by photoassisted electrolysis”
K. Fujii, K. Ohkawa
physica status solidi (c) 3, pp.2270-2273 (2006).
114.“Morphological evaluation of epitaxial GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy”
K. Kusakabe, K. Ohkawa
physica status solidi (c) 3, pp.1807-1810 (2006).
113.“Local structural characterization of epitaxial a-plane InGaN/GaN thin films by transmission electron microscopy”
T. Yamazaki, K. Kusakabe, N. Nakanishi, K. Ohkawa, I. Hashimoto
physica status solidi (c) 3, pp.1738-1741 (2006).
112.“In concentration and tilt of the a-plane (11-20) InGaN/GaN film by TEM analysis”
N. Nakanishi, K. Kusakabe, T. Yamazaki, K. Ohkawa, I. Hashimoto
Physica B 376, pp.527-531 (2006).
111.“Improvement of electrical property of Si-doped GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy”
K. Kusakabe, T. Furuzuki, K. Ohkawa
Physica B 376, pp.520-522 (2006).
110.“窒化物光触媒による水からの水素発生”
大川和宏
機能材料 26巻 5号, pp.55-61 (2006).
109.“Formation of polymers in TMGa/NH3/H2 system under GaN growth”
A. Hirako, K. Ohkawa
Journal of Crystal Growth 289, pp.428-432 (2006).
108.“Bias-assisted H2 gas generation in HCl and KOH solutions using n-type GaN photoelectrode”
K. Fujii, K. Ohkawa
Journal of the Electrochemical Society 153, pp.A468-A471 (2006).
107.“Morphological characteristics of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy”
K. Kusakabe, K. Ohkawa
Japanese Journal of Applied Physics 44, pp.7931-7933 (2005).”
106.“窒化物半導体を用いた光電気化学反応による水素生成”
藤井克司 小野雅人 伊藤高志 岩城安浩 大川和宏
信学技報 105巻 326号, pp.47-52 (2005).
105.“Photoelectrochemical properties of InGaN for H2 generation from aqueous water”
K. Fujii, K. Kusakabe, K. Ohkawa
Japanese Journal of Applied Physics 44, pp.7433-7435 (2005).
104.“Photoelectrochemical properties of p-type GaN in comparison with n-type GaN ”
K. Fujii, K. Ohkawa
Japanese Journal of Applied Physics 44, pp.L909-L911 (2005).
103.“GaN-MOVPE成長における化学反応経路の熱流体計算解析 －TMGa/NH3/H2系での化学反応について－”
平子晃 小磯沙織 草部一秀 大川和宏
信学技報 105巻 90号, pp.85-89 (2005).
102.“GaNを用いた水の光電気分解デバイス －GaNの光電気化学－”
藤井克司 大川和宏
信学技報 105巻 90号, pp.63-68 (2005).
101.“Hydrogen gas generation by splitting aqueous water using n-type GaN photoelectrode with anodic oxidation ”
K. Fujii, T. Karasawa, K. Ohkawa
Japanese Journal of Applied Physics 44, pp.L543-L545 (2005).
100.“Effect of thermal radiation and absorption in GaN-MOVPE growth modeling on temperature distribution and chemical state”
A. Hirako, K. Ohkawa
Journal of Crystal Growth 276, pp.57-63 (2005).
99.“Modeling of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy using TMGa/NH3/H2 system: a computational fluid dynamics simulation study”
A. Hirako, K. Kusakabe, K. Ohkawa
Japanese Journal of Applied Physics 44, pp.874-879 (2005).
98.“Impurity doping effect on thermal stability of InGaN/GaN multiple quantum-well structures”
K. Kusakabe, T. Hara, K. Ohkawa
Journal of Applied Physics 97, 043503 pp.1-3 (2005).
97.“Computational fluid dynamics on gaseous and surface chemistry of GaN-MOVPE system for various pressures”
K. Kusakabe, A. Hirako, S. Tanaka, K. Ohkawa
physica status solidi (c) 1, pp.2569-2572 (2004).
96.“照明の新時代”
大川和宏
理大 科学フォーラム, pp.6-10 (2004). (2004年10月号)
95.“Energy renormalization and binding energy of the biexciton”
M. Maute, S. Wachter, H. Kalt, K. Ohkawa, D. Hommel
Physical Review B 67, 165323 pp.1-4 (2003).
94.“Characterization of InGaN/GaN Fibonacci superlattices grown by two-flow metalorganic vapor phase epitaxy”
K. Kusakabe, K. Ohkawa
physica status solidi (c) 0, pp.2120-2123 (2003).
93.“X-ray diffraction study of InGaN/GaN superlattice interfaces”
K. Kusakabe, K. Ohkawa
Journal of Vacuum Science & Technology B 21, pp.1839-1843 (2003).
92.“Spatiotemporal dynamics of quantum-well excitons”
H. Zhao, B. Dal Don, S. Moehl, H. Kalt, K. Ohkawa, D. Hommel
Physical Review B 67, 035306 pp.1-7 (2003).
91.“Decomposition and uniformity of material gases in GaN MOVPE”
A. Hirako, K. Ohkawa
physica status solidi (a) 194, pp.489-493 (2002).
90.“Midinfrared pump-probe reflection spectroscopy of the coupled phonon-plasmon mode in GaN”
M. Nagai, K. Ohkawa, M. Kuwata-Gonokami
Applied Physics Letters 81, pp.484-486 (2002).
89.“GaN-MOVPE growth and its microscopic chemistry of gaseous phase by computational thermodynamic analysis”
A. Hirako, M. Yoshitani, M. Nishibayashi, Y. Nishikawa, K. Ohkawa
Journal of Crystal Growth 237, pp.931-935 (2002).
88.“Instability of Cl-related deep defects in ZnSe”
Y. Harada, H. Nakata, T. Ohyama, K. Ohkawa, M. Isshiki
Japanese Journal of Applied Physics 41, pp.514-517 (2002).
87.“Displaced substitutional phosphorus acceptors in zinc selenide”
D. Wolverson, J. J. Davies, S. Strauf, P. Michler, J. Gutowski, M. Klude, D. Hommel,K. Ohkawa, E. Tournie, J. - P. Faurie
physica status solidi (b) 229, pp.257-260 (2002).
86.“Growth of GaN layers by one-, two-, and three-flow metalorganic vapor phase epitaxy”
K. Ohkawa, A. Hirako, M. Yoshitani
physica status solidi (a) 188, pp.621-624 (2001).
85.“Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe”
J. J. Davies, D. Wolverson, S. Strauf, P. Michler, J. Gutowski, M. Klude, K. Ohkawa, D. Hommel, E. Tournie, J. - P. Faurie
Physical Review B 64, 205206 pp.1-5 (2001).
84.“Spin-dependent exciton-exciton interaction in ZnSe quantum wells”
D. Troendle, S. Wachter, D. Lueerssen, H. Kalt, I. J. Blewett, I. Galbraith, K. Ohkawa, D. Hommel
physica status solidi (a) 178, pp.535-538 (2000).
83.“Localization of excitons in pairs of natural dots induced by stacking faults in ZnSe quantum wells”
D. Lueerssen, R. Bleher, H. Kalt, H. Richter, T. Schimmel, A. Rosenauer, D. Litvinov,A. Kamilli, D. Gerthsen, B. Jobst, K. Ohkawa, D. Hommel
physica status solidi (a) 178, pp.189-192 (2000).
82.“Gigantic reflectance anisotropy of the [110] face of cubic ZnSe in the excitonic part of the spectrum”
G. Mohs, S. Dhanjal, T. Kise, M. Shirane, R. Shimano, Yu. P. Svirko, K. Ohkawa, N. I. Zheludev, M. Kuwata-Gonokami
Journal of the Physical Society of Japan 69, pp.3458-3461 (2000).
81.“Internal photoluminescence in ZnSe homoepitaxy and application in blue-green-orange mixed-color light-emitting diodes”
H. Wenisch, M. Fehrer, M. Klude, K. Ohkawa, D. Hommel
Journal of Crystal Growth 214, pp.1075-1079 (2000).
80.“Stacking-fault-induced pairs of localizing centers in ZnSe quantum wells”
D. Lueerssen, R. Bleher, H. Kalt, H. Richter, Th. Schimmel, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, B. Jobst, K. Ohkawa, D. Hommel
Journal of Crystal Growth 214, pp.634-638 (2000).
79.“Relation between spin and momentum relaxation in ZnSe/ZnMaSSe quantum wells”
D. Haegele, M. Oestreich, W. W. Ruehle, J. Hoffmann, S. Wachter, H. Kalt, K. Ohkawa, D. Hommel
Physica B 272, pp.338-340 (1999).
78.“Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures”
D. Lueerssen, R. Bleher, H. Richter, Th. Schimmel, H. Kalt, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, K. Ohkawa, B. Jobst, D. Hommel
Applied Physics Letters 75, pp.3944-3946 (1999).
77.“Electron-phonon quantum kinetics in the strong coupling regime”
D.Steinbach, G. Kocherscheidt, M. U. Wehner, H. Kalt, M. Wegener, K. Ohkawa, D. Hommel
Journal of Luminescence 83-84, pp.155-160 (1999).
76.“Electron-phonon quantum kinetics in the strong-coupling regime”
D. Steinbach, G. Kocherscheidt, M. U. Wehner, H. Kalt, M. Wegener, K. Ohkawa, D. Hommel, V. M. Axt
Physical Review B 60, pp.12079-12090 (1999).
75.“Device properties of homo- and heteroepitaxial ZnSe-based laser diodes”
H. Wenisch, M. Behringer, M. Fehrer, M. Klude, A. Isemann, K. Ohkawa, D. Hommel
Japanese Journal of Applied Physics 38, pp.2590-2597 (1999).
74.“Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates”
H. Wenisch, M. Fehrer, M. Klude, A. Isemann, V. Grossmann, H. Heinke, K. Ohkawa,D. Hommel, M. Prokesch, U. Rinas, H. Hartmann
Journal of Crystal Growth, 201, pp.933-937 (1999).
73.“Growth and Characterization of II-VI Semiconductor Lasers”
M. Behringer, H. Wenisch, M. Fehrer, V. Gros mann, A. Isemann, M. Klude, H. Heinke, K. Ohkawa, D. Hommel
Festkoerperprobleme/Advances in Solid State Physics 38, pp.47-60 (1998).
72.“Measurements of the absolute external luminescence quantum efficiency in ZnSe/ZnMgSSe multiple quantum wells as a function of temperature”
R. Westphaeling, P. Ullrich, J. Hoffmann, H. Kalt, C. Klingshirn, K. Ohkawa, D. Hommel
Journal of Applied Physics 84, pp.6871-6876 (1998).
71.“Migration enhanced epitaxy of CdSe islands on ZnSe and their optical and structural characterization”
K. Leonardi, K. Ohkawa, D. Hommel, H. Selke, F. Gindele and U. Woggon
Microelectronic Engineering 43/44, pp.701-705 (1998).
70.“Optical detection of crystallographic domains in zinc-blende crystals”
G. Mohs, R. Shimano, T. Kise, M. Shirane, M. Kuwata-Gonokami, K. Ohkawa
Applied Physics Letters 73, pp.1511-1513 (1998).
69.“Planar homoepitaxial laser diodes grown on aluminium-doped ZnSe substrates”
H. Wenisch, K. Ohkawa, A. Isemann, M. Fehrer, D. Hommel
Electronics Letters 34, pp.891-892 (1998).
68.“Comparison of long-time delay in lasing in homo- and heteroepitaxially grown II-VI laser diodes”
A. Isemann, M. Behringer, H. Wenisch, M. Fehrer, K. Ohkawa, D. Hommel
Acta Physica Polonica A 94, pp.355-360 (1998).
67.“Stability issues of quaternary CdZnSSe and ternary CdZnSe quantum wells in blue-green laser diodes”
M. Behringer, K. Ohkawa, M. Fehrer, V. Grossmann, H. Heinke, D. Hommel, M. Kuttler, M. Strassburg, D. Bimberg
Journal of Crystal Growth 184, pp.580-584 (1998).
66.“Formation of self-assembling II-VI semiconductor nanostructures during migration enhanced epitaxy”
K. Leonardi, H. Heinke, K. Ohkawa, D. Hommel, H. Selke, F. Gindele, U. Woggon
Journal of Crystal Growth 184, pp.259-263 (1998).
65.“Exciton localisation in CdSe islands buried in a quantum well of Zn1-XCdXSe”
F. Gindele, U. Woggon, W. Langbein, J. Hvam, K. Leonardi, K. Ohkawa, D. Hommel
Journal of Crystal Growth 184, pp.306-310 (1998).
64.“Internal photoluminescence and lifetime of light-emitting diodes on conductive ZnSe substrates”
H. Wenisch, M. Fehrer, K. Ohkawa, D. Hommel, M. Prokesch, U. Rinas, H. Hartmann
Journal of Applied Physics 82, pp.4690-4692 (1997).
63.“CdSe/ZnSe quantum structures grown by migration enhanced epitaxy: structural and optical investigations”
K. Leonardi, H. Heinke, K. Ohkawa, D. Hommel, H. Selke, F. Gindele, U. Woggon
Applied Physics Letters 71, pp.1510-1512 (1997).
62.“CdSe/ZnSe quantum dot structures: structural and optical investigation”
D. Hommel, K. Leonardi, H. Heinke, H. Selke, K. Ohkawa, F. Gindele, U. Woggon
physica status solidi (b) 202, pp.835-843 (1997).
61.“ZnSe-based laser diodes and LEDs grown on ZnSe and GaAs substrates”
K. Ohkawa, M. Behringer, H. Wenisch, M. Fehrer, B. Jobst, D. Hommel, M. Kuttler, M. Strassburg, D. Bimberg, G. Bacher,
D. Toennies and A. Forchel
physica status solidi (b) 202, pp.683-693 (1997).
60.“Real-index guided blue-green laser diode with small beam astigmatism fabricated using ZnO buried structure”
T. Yokogawa, S. Kamiyama, S. Yoshii, K. Ohkawa, A. Tsujimura, Y. Sasai
Japanese Journal of Applied Physics 35, pp.L314-L316 (1996).
59.“Compound source molecular beam epitaxy for II-VI laser structures”
K. Ohkawa, A. Tsujimura, T. Nishikawa, S. Yoshii, T. Yokogawa, M.Kubo, Y. Sasai
Journal of Crystal Growth 159, pp.632-635 (1996).
58.“窒素ラジカルドーピング法”
大川和宏
応用物理 vol. 64, No.7, pp.715-716 (1995）.
57.“青色半導体レーザー”
大川和宏
電気通信5 vol. 58, pp.24-28, (1995）.
56.“酸素イオン注入によるII-VI族青緑色レーザ”
吉井重雄, 横川俊哉, 大川和宏, 辻村歩, 佐々井洋一
信学技報 Vol. 95, pp.25-30 (1995).
55.“ワイドギャップⅡ-Ⅵ族半導体へのドーピング”
大川和宏
ニューダイヤモンドフォーラム, JNDF - TX分科 - ’95 -, pp.1-6 (1995).
54.“Ⅱ－Ⅵ族半導体のMBE成長とドーピング”
辻村歩, 大川和宏, 佐々井洋一, 三露常男
応用物理学会 結晶工学分科会第103回研究会，pp.21-26 (1995).
53.“Compound-source MBE for ZnSe-based lasers”
K. Ohkawa, H. Takeishi, S. Hayashi, S. Yoshii, A. Tsujimura, T.Karasawa, T. Mitsuyu
physica status solidi (b) 187, pp.291-296 (1995).
52.“Role of biexciton state in excitonic resonant nonlinearity in homoepitaxial ZnSe”
T. Saiki, M. Kuwata-Gonokami, K. Ohkawa, T. Mitsuyu
Solid State Communication 95, pp.679-683 (1995).
51.“Compound-source molecular beam epitaxy for ZnCdSe/ZnSSe/ZnMgSSe laser structure”
K. Ohkawa, S. Yoshii, H. Takeishi, A. Tsujimura, S. Hayashi, T.Karasawa, T. Mitsuyu
Japanese Journal of Applied Physics 33, pp.L1673-L1675 (1994).
50.“Spin-flip Raman scattering from shallow and deep donor centres in nitrogen-doped p-type zinc selenide”
P. J. Boyce, J. J. Davies, D. Wolverson, K. Ohkawa, T. Mitsuyu
Applied Physics Letters 65, pp.2063-2065 (1994).
49.“Free induction decay and quantum beat of excitons in ZnSe”
T. Saiki, T. Takeuchi, K. Ema, M. Kuwata-Gonokami, K. Ohkawa, T. Mitsuyu
Journal of Crystal Growth 138, pp.805-808 (1994).
48.“Optical gain in an inhomogeneously broadened exciton system”
T. Ishihara, Y. Ikemoto, T. Goto, A. Tsujimura, K. Ohkawa, T. Mitsuyu
Journal of Luminescence 58, pp.241-243 (1994).
47.“青色半導体レーザー”
大川和宏
レーザーセミナー, pp.VI1-VI16 (1994).
46.“ZnSe系青, 緑色半導体レーザとMBE成長”
大川和宏
日本結晶成長学会誌 20, pp.367-376 (1993).
45.“ZnSe系半導体のMBE成長と青緑色レーザー”
三露常男 大川和宏
光学 22, pp.664-669 (1993).
44.“青色半導体レーザ”
大川和宏 三露常男
National Technical Report 39, pp.416-419 (1993).
43.“CdZnSe/ZnSe SCH構造のTEM、CL観察”
高橋康仁, 成沢忠, 林茂生, 大川和宏, 三露常男, 薮内康文, 西条浩志, 一色俊之, 塩尻旬, 寧剛, 小川和朗
信学技報 (1993)．
42.“Fabrication and characterization of ZnSe-based blue/green laser diodes”
A. Tsujimura, S. Yoshii, S. Hayashi, K. Ohkawa, T. Mitsuyu
SPIE Proceedings Vol.1985 Physical Concept and Materials for Novel Optoelectronic Device
Applications II, pp.468-475, 1993.
41.“セレン化亜鉛(ZnSe)の伝導型制御と青色・緑色半導体レーザーへの応用”
大川和宏, 三露常男
応用物理 62, pp.113-119 (1993).
40.“窒素ラジカルドーピング法によるｐ型ZnSeの作製”
大川和宏, 三露常男
真空 36, pp.882-884 (1993).
39.“青色半導体レーザー”
大川和宏
レーザーセミナー, V15-V27 (1993).
38.“ZnSe系の青色・緑色レーザ”
大川和宏
薄膜・表面物理セミナー, pp.35-49 (1993).
37.“ZnSe-based diode lasers with stripe-geometry fabricated by ion bombardment”
S.Yoshii, S.Hayashi, A.Tsujimura, K.Ohkawa, T.Mitsuyu, H.Takeishi, Y.Takahashi, T.Narusawa
Japanese Journal of Applied Physics 32, pp.L1753-L1755 (1993).
36.“Cavity parameters of ZnCdSe/ZnSe single-quantum-well separate-confinement-heterostructure laser diodes”
A. Tsujimura, S. Yoshii, S. Hayashi, K. Ohkawa, T. Mitsuyu
Japanese Journal of Applied Physics 32, pp.L1750-L1752 (1993).
35.“Photopumped blue laser action in ZnSe-ZnMnSSe double heterostructure grown by molecular beam epitaxy”
T. Karasawa, K. Ohkawa, T. Mitsuyu
Japanese Journal of Applied Physics 32, pp.L1657-L1659 (1993).
34.“ZnSe-based laser diodes and p-type doping of ZnSe”
K. Ohkawa, A. Tsujimura, S. Hayashi, S. Yoshii, T. Mitsuyu
Physica B 185, pp.112-117 (1993).
33.“Characteristics of ZnCdSe single-quantum-well laser diodes”
A. Tsujimura, S. Yoshii, S. Hayashi, K. Ohkawa, T. Mitsuyu, H. Takeishi
Physica B 191, pp.130-132 (1993).
32.“Zn1-XCdXSe(X=0.2-0.3) single-quantum-well laser diodes without GaAs buffer layers”
S. Hayashi, A. Tsujimura, S. Yoshii, K. Ohkawa, T. Mitsuyu
Japanese Journal of Applied Physics 31, pp.L1478-L1480 (1992).
31.“Molecular-beam epitaxial growth of p- and n-type ZnSe homoepitaxial layers”
K. Ohkawa, A. Ueno, T. Mitsuyu
Journal of Crystal Growth 117, pp.375-384 (1992).
30.“Giant excitonic optical nonlinearity in ZnSe grown by molecular beam epitaxy”
T. Saiki, T. Takeuchi, M. Kuwata-Gonokami,T. Mitsuyu, K. Ohkawa
Journal of Crystal Growth 117, pp.802-805 (1992).
29.“Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with ion- and radical-beam doping techniques”
K. Ohkawa, T. Mitsuyu
Journal of Luminescence 52, pp.9-15 (1992).
28.“Giant nonlinear phase shift at exciton resonance in ZnSe”
T. Saiki, T. Takeuchi, M. Kuwata-Gonokami, K. Ohkawa, T. Mitsuyu
Applied Physics Letters 60, pp.192-194 (1992).
27.“ZnSe系半導体の導電性制御と青緑色半導体レーザダイオード”
林茂生, 吉井重雄, 辻村 歩, 大川和宏, 三露常男
電子材料研究会 EFM-92-28, pp.55-62 (1992).
26.“Doping and MBE growth of ZnSe for blue LEDs and LDs”
K. Ohkawa, A. Tsujimura, S. Hayashi, S. Yoshii, T. Mitsuyu
Ext. Abstr. of the 1992 Int. Conf. on Solid State Devices and Materials, pp.330-332 (1992).
25.“p- and n-type doping of ZnSe homoepitaxial and heteroepitaxial layers”
K. Ohkawa, A. Tsujimura, S. Hayashi, S. Yoshii, T. Mitsuyu
11th Record of Alloy Semiconductor Physics and Electronics Symposium, pp.105-110 (1992).
24.“MBE成長ZnSe系半導体の伝導型制御”
大川和宏, 三露常男
応用物理学会 結晶工学分科会 第98回研究会, pp.3-8 (1992).
23.“Homoepitaxial growth of p-type ZnSe layers on dry-etched substrates”
K. Ohkawa, T. Mitsuyu
Materials Research Society Symposium 228, pp.307-312 (1992).
22.“Electroluminescence from p-n junction LEDs consisting of N-doped and Cl-doped ZnSe layers”
K. Ohkawa, A. Ueno, T. Mitsuyu
Proceedings of Materials Research Society Symposium 228, pp.339-344 (1992).
21.“Blue electroluminescence from ZnSe p-n junction light-emitting diodes”
K. Ohkawa, A. Ueno, T. Mitsuyu
Japanese Journal of Applied Physics 30, pp.3873-3875 (1991).
20.“Molecular-beam epitaxial growth and characterization of ZnS-ZnXCd1-XS strained-layer superlattices”
T. Karasawa, K. Ohkawa, T. Mitsuyu
Journal of Applied Physics 69, pp.3226-3230 (1991).
19.“p-type ZnSe homoepitaxial layers grown by molecular beam epitaxy with nitrogen radical doping”
K. Ohkawa, T. Mitsuyu
Journal of Applied Physics 70, pp.439-442 (1991).
18.“Blue electroluminescence from ZnSe p-n junction LEDs”
K. Ohkawa, A. Ueno, T. Mitsuyu
Ext. Abstr. of the 1991 Int. Conf. on Solid State Devices and Materials, pp.704-706 (1991).
17.“Characteristics of p-type ZnSe layers grown by molecular beam epitaxy with radical doping”
K. Ohkawa, T. Karasawa, T. Mitsuyu
Japanese Journal of Applied Physics 30, pp.L152-L155 (1991).
16.“Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth”
K. Ohkawa, T. Karasawa, T. Mitsuyu
Journal of Crystal Growth 111, pp.797-801 (1991).
15.“Treatment of ZnSe substrates for homoepitaxy”
K. Ohkawa, T. Karasawa, T. Mitsuyu
Journal of Vacuum Science & Technology B 9, pp.1934-1938 (1991).
14.“ラジカルドーピング法を用いたp型ZnSeのMBE成長”
大川和宏, 三露常男
日本学術振興会 光電相互変換第125委員会 第137回研究会, pp.1-6 (1991).
13.“Multiple states in surface lattice constant behavior during the molecular beam epitaxial growth of ZnTe-ZnS strained layer superlattices”
T. Karasawa, K. Ohkawa, T. Mitsuyu
Journal of Applied Physics 68, pp.4581-4585 (1990).
12.“ZnTe-ZnS strained-layer superlattices grown by ALE and MBE: Effect of strain on ZnTe incorporation”
T. Karasawa, K. Ohkawa, T. Mitsuyu
Journal of Crystal Growth 101, pp.118-121 (1990).
11.“Characterization of short-period ZnTe-ZnS superlattices grown by MBE”
T. Karasawa, K. Ohkawa, T. Mitsuyu
Journal of Crystal Growth 99, pp.464-467 (1990).
10.“Homoepitaxial growth of ZnSe on dry-etched substrates”
K. Ohkawa, T. Karasawa, A. Yoshida, T. Hirao, T. Mitsuyu
Applied Physics Letters 54, pp.2553-2555 (1989).
9.“Electron and x-ray diffraction study of ZnTe-ZnS strained-layer superlattices grown by molecular beam epitaxy”
T. Karasawa, K. Ohkawa, T. Mitsuyu
Applied Physics Letters 54, pp.117-119 (1989).
8.“MBE-grown ZnTe-ZnS strained-layer superlattices”
T. Karasawa, K. Ohkawa, T. Mitsuyu
Journal of Crystal Growth 95, pp.547-551 (1989).
7.“Effect of biaxial strain on exciton luminescence of heteroepitaxial ZnSe layers”
K. Ohkawa, T. Karasawa, T. Mitsuyu
Physical Review B 38, pp.12465-12469 (1988).
6.“Molecular beam epitaxial growth of nitrogen-doped ZnSe with ion doping technique”
K. Ohkawa, T. Mitsuyu, O. Yamazaki
Journal of Crystal Growth 86, pp.329-334 (1988).
5.“MBE法におけるZnTe-ZnS歪超格子成長過程の観察および構造評価”
柄沢武, 大川和宏, 三露常男
電子材料研究会 EFM 89, 8, pp.53-60 (1989).
4.“ZnSeのMBE成長とドーピング”
大川和宏, 三露常男, 山崎攻
電子情報通信学会技報 86, pp.89-95 (1987).
3.“Low resistivity Cl-doped ZnSe layers grown by molecular beam epitaxy”
K. Ohkawa, T. Mitsuyu, O. Yamazaki
Ext. Abstr. of the 18th (1986 Int.) Conf. on Solid State Devices and Materials, pp.635-638 (1986).
2.“Characteristics of Cl-doped ZnSe layers grown by molecular-beam epitaxy”
K. Ohkawa, T. Mitsuyu, O. Yamazaki
Journal of Applied Physics 62, pp.3216-3221 (1987).
1.“Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion doping”
T. Mitsuyu, K. Ohkawa, O. Yamazaki
Applied Physics Letters 49, pp.1348-1350 (1986).