The paper entitled "Energy transport analysis in a Ga0.84In0.16N/GaN heterostructure using microscopic Raman images employing simultaneous coaxial irradiation of two lasers" reports the pump and probe method in Raman spectroscopy is valid for analyzing energy or heat transport across the heterointerface. This paper has been chosen as an Editor's Pick.
The paper entitled "Demonstration of low forward voltage InGaN-based red LEDs" reports the 665-nm peak red emission from InGaN-based LEDs at 20 mA under very low operation voltage < 2.5 V. This paper has ranked in "MOST READ". Congratulations!
The paper entitled “A Stand-Alone Module for Solar-Driven H2 Production Coupled with Redox-Mediated Sulfide Remediation ” reports successful H2S splitting into solid sulfur and hydrogen gas. H2S is toxic gas in crude oil plants. This is an international collaboration including KAUST and Aramco.
ECO Devices welcomes new PhD students Pavel Kirilenko and Artem Shushanian!
By David Murphy, KAUST News
KAUST Professor of Electrical Engineering Kazuhiro Ohkawa was recently elected as a Fellow of the Japan Society of Applied Physics (JSAP).
The paper entitled “Influence of polymerization among Al- and Ga-containing molecules on growth rate and Al content in AlGaN” indicates the AlGaN growth mechanism. AlGaN is one of key materials for light-emitters and electronic devices.
The paper entitled “Photoelectrochemical H2 generation from water using a CoOx/GaN photoelectrode" announced a new co-catalyst for GaN photocatalyst.
Japanese Journal of Applied Physics 58, SCCC23 (2019).
The paper entitled “Photoelectrochemical hydrogen generation using graded In-content InGaN photoelectrode structures" proposed an effective nano-structure.
Nano Energy 59, pp.569–573 (2019). DOI: j.nanoen.2019.03.011
Arwa has earned 5th places and special awards in the IBDA’A National Olympiads, which took place in Riyadh.
The paper entitled “Investigation of p-GaN layer thickness of InGaN-based photoelectrode for photoelectrochemical hydrogen generation” mentioned the enhancement of energy conversion efficiency by band engineering.
Japanese Journal of Applied Physics 58, SCCC32 (2019).
The paper entitled “Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys” will inspire InGaN MOVPE growth and their LED applications. DOI: 10.1016/j.jcrysgro.2019.02.018