Martín Velázquez Rizo

About Martín Velázquez Rizo

Martín Velázquez Rizo

Ph.D. Student, Electrical and Computer Engineering

photocatalytic energy conversion

Martín Velázquez Rizo obtained his Master's degree in Electrical Engineering under the supervision of Prof. Hossein Fariborzi at King Abdullah University of Science and Technology (KAUST). Martin has a B. Sc. degree in Physics from the Universidad Nacional Autónoma de México. During his undergraduate studies, he did research in Mexico as well as abroad. At the age of 23, he graduated from College (with honorable mention). One year later he came to KAUST to enroll in the M.S./Ph.D. program in Electrical Engineering. He is deeply interested in the physics behind the electronic devices that

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March 2023

January 2023

Paper accepted in Frontiers in Chemical Engineering!

1 min read · Wed, Jan 11 2023

News

Martin, in collaboration with the EXPEC ARC, Saudi Aramco, reviewed the different technologies and approaches explored to improve the energy efficiency and stability of H2S electrolytic systems at temperatures below the sulfur dew point. The review paper was published in Frontiers in Chemical Engineering.”

September 2022

Selected as “Highlighted talk” at the Autumn meeting of Japanese Society of Applied Physics.

1 min read · Tue, Sep 13 2022

News

Our Scheduled presentation is selected as “Highlighted talk” at the Autumn meeting of the Japanese Society of Applied Physics. Mohammed Najmi et al., “Structural analysis of N-polar InGaN layer grown on ScAlMgO4 substrate without buffer layer” 23a-E202-10 from 11:45 am March 23 (JPN time) The ratio of the highlighted talks in this conference is usually less than 1%.

June 2022

Paper accepted in AIP Advances! This paper has been chosen as an Editor's Pick. Congratulations!

1 min read · Wed, Jun 8 2022

News

We report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on conventional c-plane-patterned sapphire substrates. The packaged LED's external quantum efficiency, light-output power, and forward voltage with a 621 nm peak emission wavelength at 20 mA (10.1 A/cm2) injection current were 4.3%, 1.7 mW, and 2.96 V, respectively. This design development represents a valuable contribution to the next generation of micro-LED displays. This paper has been chosen as an Editor's Pick.

May 2022

Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4(0001) substrate

1 min read · Mon, May 2 2022

News

We demonstrated a high crystalline quality of N-polar InGaN layer grown on ScAlMgO4 substrates by metalorganic vapor-phase epitaxy. The results show that the interface between N-polar InGaN and SAM occurs between the O atoms of the O–Sc SAM surface and the (Ga,In) atoms of InGaN.

March 2022

Congratulations! Selected as “Highlighted talk” at the Spring meeting of Japanese Society of Applied Physics in Spring 2022.

1 min read · Wed, Mar 9 2022

News

Our Scheduled presentation is selected as “Highlighted talk” at the Spring meeting of the Japanese Society of Applied Physics in Spring 2022. Daisuke Iida et al., “” 23a-E202-10 from 11:45 am March 23 (JPN time) The ratio of the highlighted talks in this conference is usually less than 1%.

January 2022

Passivation of Surface States in GaN by NiO Particles

1 min read · Thu, Jan 27 2022

News

we characterized the surface states in GaN by EIS analyses and demonstrated that NiO particles deposited directly on GaN passivate them. These surface states are generated by the electronic bindings of superficial Ga atoms, and the interaction of those atoms with NiO modifies its chemical structure, as demonstrated by XPS measurements.

September 2021

August 2021

July 2021

630-nm red InGaN micro-light-emitting diodes (<20 μm × 20 μm) exceeding 1 mW/mm2 for full-color micro-displays

1 min read · Tue, Jul 20 2021

News

The paper reports InGaN-based RGB micro-LED arrays that comprise every single µLED in the dimension of 17 × 17 µm2. We obtained the output power density of the InGaN-based red µLEDs as 1.76 mW/mm2, which was estimated to be higher than that of 20 × 20 µm2 AlInGaP red µLEDs (~630 nm). The result reveals a great potential for the InGaN materials to be used in full-color micro-displays.

September 2020

Standing the test of time with a perfect partner

1 min read · Tue, Sep 1 2020

News

energy electrical engineering

Identifying the ideal co-catalyst can significantly extend the working lifetime of solar fuel–generating photocatalysts.

July 2020

Photoelectrochemical and Crystalline Properties of a GaN Photoelectrode Loaded with α-Fe2O3 as Cocatalyst

1 min read · Fri, Jul 10 2020

News

The paper entitled "Photoelectrochemical and Crystalline Properties of a GaN Photoelectrode Loaded with α-Fe2O3 as Cocatalyst" reports the investigation of the heterostructure with α-Fe2O3/GaN characterized by TEM observations. The analytical observation of TEM is significantly important to develop the new material and its relative devices. Sci Rep 10, 12586 (2020), DOI: 10.1038/s41598-020-69419-8