Mohammed Affan Zidan, Hossam Aly Hassan Fahmy, Muhammad MustafaHussain, Khaled Nabil Salama
Microelectronics Journal Volume 44, Issue 2, February 2013, Pages 176-183
Abstract: In this paper, we investigate the read operation of memristor-based memories. We analyze the sneak paths problem and provide a noise margin metric to compare the various solutions proposed in the literature. We also analyze the power consumption associated with these solutions. Moreover, we study the effect of the aspect ratio of the memory array on the sneak paths. Finally, we introduce a new technique for solving the sneak paths problem by gating the memory cell using a three-terminal memistor device.