LED

Hybrid integration of materials for ultraviolet detection

-

B9 L2 H1 R2322

Semiconductors are pervasive in consumer electronics and optoelectronics, and the related optical devices are deemed disruptive that Nobel Prize in Physics in 2014 was awarded to the inventors of blue light-emitting diodes (LEDs), which “has enabled bright and energy-saving white light sources”. While AlInGaN-based lasers and LEDs, and silicon-based photodetectors are currently matured, unconventional usage based on the materials has demonstrated their further potential, including solar-hydrogen generation, indoor-horticulture, and high-speed communication.

Blue LED material extended to Green, Yellow, and now Red

-

KAUST

In this seminar, the science of MOCVD, the material science of InGaN, and the new-born InGaN-based red LED performance will be discussed. The three primary colors in light are RGB. Green and blue LEDs have been realized by using InGaN active region. The current red LEDs are based on AlGaAs or InGaP as the active region. If we can realize red LEDs by InGaN, it is possible to integrate RGB LEDs in a wafer. Such RGB integration is a breakthrough to develop the next displays, so-called, micro-LED displays that are the next after the OLED displays, and functional LED lightings.

Blue LED material beyond Blue for Micro-LED Displays

-

KAUST

Energy is an indispensable part of our lives. We are challenging energy-saving novel light emitters and clean-energy generation systems at Energy Conversion Devices and Materials (ECO Devices) Laboratory at KAUST. The former is based on MOCVD technology, material science, and device technology. The latter is the nitride photocatalyst invented by Ohkawa. The development of highly-efficient InGaN-based blue LEDs was the topic of the 2014 Nobel Prize in Physics. InGaN-based green LEDs were realized after improving the quality of higher-In-content InGaN. The three primary colors in light are RGB. The current red LEDs are based on InGaP as the active region. If we realize red LEDs by InGaN, we can fabricate the monolithic RGB LEDs in a wafer. Such RGB integration will be a breakthrough for micro-LED displays that are the next generation after the OLED displays. In this seminar, the science of MOCVD, the growth of high-In-content InGaN, and the state-of-the-art InGaN-based red LEDs will be introduced.

A different kind of light

1 min read ·
The discovery of the incandescent light bulb has transformed human existence. New LED technologies promise to be the next step forward.

KAUST's Professor Xiaohang Li wins the Manasevit Young Investigator Award 2018

1 min read ·
KAUST's Professor Xiaohang Li, Lead of the Advanced Semiconductor Research Group and assistant professor of electrical engineering at CEMSE Division, won the biennial 2018 Harold M. Manasevit Young Investigator Award for his significant and innovative contributions in the MOCVD growth of state-of-the-art deep UV lasers, B-III-N alloys, III-oxides, and blue and green emitters.

KAUST Ph.D. student receives SPIE 2020 Optics and Photonics Education Scholarship

1 min read ·
Ronghui Lin, a Ph.D. student under the supervision of Professor Xiaohang Li, has been awarded an SPIE 2020 Optics and Photonics Education Scholarship for his “potential long-range contribution to optics, photonics, or other related fields.”

Red-light LEDs for next-generation displays

1 min read ·
Novel red LEDs are more temperature stable than those made using the conventional semiconductor of choice.

Hsin-Hung Yao

Postdoctoral Research Fellow, Advanced Semiconductor Laboratory
Hsin-Hung Yao was a Postdoctoral Fellow working under the supervision of Prof. Xiaohang Li at the Advanced Semiconductor Laboratory at King Abdullah University of Science and Technology (KAUST). Research Interests Dr. Yao’s research interests are the application of nitride-based semiconductor materials. They include novel devices design, device structure growth (Epitaxy by MOCVD system), fabrication and characteristic measurement of a device. Recently, his interests include super-wide materials (Al-rich material, and so on) growth by MOCVD system on various substrates (Sapphire, SiC, and Si)