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Abstract
Recently, InGaN-based blue, green, and red (RGB) micro-LEDs have garnered significant attention and interest due to their exceptional features such as high contrast, intense brightness, excellent energy efficiency, and long device lifetimes, positioning them as strong contenders as the next-generation display technology. The traditional plasma etching process for defining micro-LED pixels could lead to significant sidewall damage. Defects near sidewall regions act as non-radiative recombination centers and paths for current leakage, significantly deteriorating device performance. In our study, we demonstrated a novel selective thermal oxidation (STO) method that allowed pixel definition without undergoing plasma damage and subsequent dielectric passivation. The improved device performance indicated that the STO method could become an effective technology in future micro-LED manufacturing.
Brief Biography
Zhiyuan Liu received a B.E. degree in Electrical Engineering from University of Electronic Science and Technology of China in 2020, and a M.S. degree in Electrical and Computer Engineering from King Abdullah University of Science and Technology in 2021. Currently, he is pursuing his Ph.D. degree under the supervision of Prof. Xiaohang Li at KAUST. His research interests include the modeling and fabrication of III-N semiconductor electronics and optoelectronics. He is the first and co-first author of 6 journal papers, 1 conference paper, and 2 US patents. He received the CEMSE Academic Excellence Award in 2021 at KAUST. He also honored the Best Poster Presentation Award in International Workshop on Nitride Semiconductors in 2022, and the Best student award in the International Conference on Nitride Semiconductors in 2023.