Power semiconductor: Performance Improvement of Power Devices Using 4H-SiC

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Location
Building 9, Level 2, Room 2325

Abstract

Power semiconductors, as devices of power conversion, are indispensable devices in the power supply of familiar home appliances, automobiles, trains, etc. This presentation will explain the types of power devices and range of use application, device structures and operation of power devices. The reduction of power conversion losses and improvement of performance by switching from conventionally used Si to wide bandgap materials will be explained. Recent efforts to improve the performance of 4H-SiC will also be discussed.

Brief Biography

Wakana Takeuchi is currently an associate professor at Aichi Institute of Technology in Aichi, Japan, and came to KAUST as the visiting faculty member in April this year. She graduated from Nagoya University, Japan, with a Ph.D. degree in 2009. The title of her Ph.D. thesis is "Study on Synthesis of Carbon Nanowalls Using Plasma Enhanced Chemical Vapor Deposition and Their Electrical Properties." She worked on the synthesis and characterization of nanocarbon materials, carbon nanowalls (CNWs), using plasma-enhanced chemical vapor deposition. From 2009 to 2010, she was a postdoctoral researcher at the Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Japan. From 2010 to 2017, she worked as an Assistant Professor at Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya, Japan. From 2017 to 2018, she worked as an Assistant Professor at Department of Materials Physics, Nagoya University, Nagoya, Japan. In this position, she worked on germanium and germanium-tin crystal growth for LSI and interface characterization of metal oxide semiconductors. she also worked on silicon carbide research for power devices. Then, in 2018, she became an associate professor in her current position at Aichi Institute of Technology. Currently, she is engaged in research on electrical properties of semiconductor devices, evaluation of SiC for power devices, and crystal growth of SiC thin films using vinyl silane raw materials. Her specialties are the growth of semiconductors and the evaluation of semiconductor devices for electronic devices. She has been a member of the local executive committee of 10 international conferences on plasma, devices, and crystal growth held in Japan. In terms of my achievements, I have published 80 papers, including co-authored papers, and presented 174 papers at international conferences.

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