Abstract
The inclusion of boron in III-Nitride semiconductors is an exciting prospect. It allow a break in the rather fixed relationship between strain, bandgap and electrical polarisation that inherently controls what can be achieved in using light emitting diodes with AlGaN. However, the addition of boron is quite challenging, leading to defects and roughening of the material, as well as difficulties in understanding of the incorporation of B in the material. In this presentation we will examine the potetnail for boron containing alloys in quantum wells, with a view to their inclusion in III-Nitride light emitting diodes for UV emission.
Brief Biography
Peter Parbrook was awarded a first class honours degree in Physics from the University of Strathclyde, Scotland in 1987. His Ph.D., also from the University of Strathclyde, was on the study of the growth and characterisation of wide-bandgap II-VI semiconductors. The majority of this work was carried out on secondment to the Royal Signals and Radar Establishment, Malvern, England.
In 1991 on completion of his Ph.D. studies he took a Toshiba Fellowship to continue his research in II-VI materials, working at the Toshiba Central Research and Development Center in Japan, continuing as a contract researcher there on completion of the fellowship period.
In 1995 he was appointed to a lectureship in the Department of Electronic and Electrical and Engineering at the University of Sheffield, being promoted to Reader in 2002. During this time he installed and developed a research activity in III-N semiconductors using metalorganic vapour phase epitaxy, with particular interest in the use of these materials for short wavelength light emitting devices.
In 2009 he took up an appointment jointly between the School of Engineering and the Tyndall National Institute as a Stokes Professor, continuing his research into the preparation of III-N materials and devices.
Prof. Parbrook is the author / co-author of more than 150 publications in international journals and of around 10 patents. He is a member of the International Advisory Committee for the International Workshop on Nitride Semiconductors conference series. In 2011 he was co-chair of the International Conference on Nitride Semiconductors (ICNS) held in Glasgow, Scotland.