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Abstract
(Ultra)wide bandgap compound semiconductors including AlN, GaN, Ga2O3 and In2O3 have attracted enormous interests. They offer markedly larger figures of merits for power and RF applications than other known semiconductors. Additionally, they can be applied for vastly impactful quantum information technologies and deep UVvisible optoelectronics. Moreover, they could be promising for More Moore, More than Moore, and Beyond Moore applications. This seminar will cover the latest material, device and IC research based on (U)WBG semiconductors for the future of Moore’s Law.
Brief Biography
Xiaohang Li is an Associate Professor of Electrical and Computer Engineering and Applied Physics. He obtained Ph.D. in Electrical Engineering from Georgia Institute of Technology where he received the Institute’s highest PhD student honor, the Edison Prize. His research focuses on cutting-edge research on (ultra)wide bandgap semiconductors for next-generation electronics and photonics. He has authored over 160 journal papers in prestigious journals such as Nature Electronics, Advanced Materials, Light: Science & Application, Optica. He has also authored more than 250 conference publications and presentations, and holds >20 issued patents. He is the recipient of several prestigious awards including the Harold M. Manasevit Young Investigator Award from the American Association for Crystal Growth, the SPIE D. J. Lovell Scholarship, the IEEE Photonics Graduate Student Fellowship, the Georgia Tech 40 under 40 Award. His team has received best student and paper awards from IWN, ICNS, and SPIE. He is an Associate Editor of Photonics Research, an editorial member of Journal of Semiconductor, a guest editor of Advanced Electronic Materials and Advanced Materials Interfaces, and as a committee member of several leading conferences including IWN, EMC, and IC-MOVPE. He is also a reviewer of journals such as Nature Photonics, Nature Materials, and Nature Electronics.
