The paper entitled "High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits" reports the growth of phosphor-free InGaN-based white light-emitting diodes by metalorganic vapor-phase epitaxy. Appl. Phys. Lett. 117, 172103 (2020). DOI: 10.1063/5.0026017
