Abstract
In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW)
structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality,
with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared
to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure
exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density
increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of
424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate
that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light
communication applications.
