[Abstract] We studied the wet electrochemical etching of n-GaN films in oxalic acid. The electrooxidation process occurs in potentiostatic mode in the voltage range of 5 to 20 V. We described the formation of porous n-GaN layer structures in several ways. Firstly, we observed the microphotographs of the cross section to characterize the nanostructure. Secondly, we examined the reaction products in liquid phase by ICP-OES and TOC-TN methods, while vapor phase products were registered by a gas chromatography. Finally, according to the product data analysis, we demonstrate a mechanism of the electrochemical oxidation of n-GaN in oxalic acid, which involves 6 electrons.
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