Selected as “Highlighted talk” at the Autumn meeting of Japanese Society of Applied Physics.

Our Scheduled presentation is selected as “Highlighted talk” at the Autumn meeting of the Japanese Society of Applied Physics. Mohammed Najmi et al., “Structural analysis of N-polar InGaN layer grown on ScAlMgO4 substrate without buffer layer” 23a-E202-10 from 11:45 am March 23 (JPN time) The ratio of the highlighted talks in this conference is usually less than 1%.