Abstract
This talk will give an overview of the research of III-nitride based visible light-emitting diodes (LEDs) from the KAUST Energy Conversion Devices and Materials (ECO Devices) Laboratory (https://ecodevices.kaust.edu.sa/Pages/Overview.aspx).
The paper entitled "High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits" reports the growth of phosphor-free InGaN-based white light-emitting diodes by metalorganic vapor-phase epitaxy. Appl. Phys. Lett. 117, 172103 (2020). DOI: 10.1063/5.0026017
The paper entitled "Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes" reports the numerically investigated the performance of N-polar AlGaN-based ultraviolet light-emitting diodes with different Al contents in quantum wells and barriers.
Prof. Ohkawa delivered a lecture about science and technology of MOVPE for students and engineers from industries.
https://annex.jsap.or.jp/kessho/contents/2020/school200914.html
ECO Devices Lab has identified that the co-catalyst can significantly extend the working lifetime of solar fuel–generating photocatalysts. The article entitled “Standing the test of time with a perfect partner”.
ECO Devices Lab has discovered that a form of iron oxide makes an excellent co-catalyst for a promising photocatalytic material called gallium nitride. The article entitled “Standing the test of time with a perfect partner”.
ECO Devices Lab has identified that the co-catalyst can significantly extend the working lifetime of solar fuel–generating photocatalysts. The article entitled “Standing the test of time with a perfect partner”.
Link: https://scienmag.com/standing-the-test-of-time-with-a-perfect-partner/
ECO Devices Lab has discovered that a form of iron oxide makes an excellent co-catalyst for a promising photocatalytic material called gallium nitride. The article entitled “Standing the test of time with a perfect partner”.
https://www.eurekalert.org/pub_releases/2020-09/kauo-stt090120.php
The book entitled " Simulation of Nitride Semiconductor MOVPE" describes MOVPE growth and its mechanism of nitride semiconductors such as GaN, AlN, AlGaN, and InGaN.
https://doi.org/10.1002/3527600434.eap941
The paper entitled "LOCAL HEAT ENERGY TRANSPORT ANALYSES IN GALLIUM-INDIUM-NITRIDE/GALLIUM
NITRIDE HETEROSTRUCTURE BY MICROSCOPIC RAMAN IMAGING EXPLOITING
SIMULTANEOUS IRRADIATION OF TWO LASER BEAMS" reports the pump and probe method in Raman spectroscopy is valid for analyzing energy or heat transport across the heterointerface.
GaN-on-Si developer ALLOS Semiconductors (in Germany) announced it is collaborating with ECO Devices Lab (KAUST) to develop high-efficient nitride-based red LEDs on large diameter silicon substrates.
https://www.microled-info.com/
COMPOUND SEMICONDUCTOR announced that ALLOS and ECO Devices lab start the co-development of the high-efficiency nitride-based red LEDs on silicon. High-quality GaN-on-Si technique is attracted to develop the RGB micro-LEDs.
ALLOS and ECO Devices Lab start to co-development of the high-efficiency nitride-based red LEDs on silicon. High-quality GaN-on-Si technique is attracted to develop the RGB micro-LEDs.
http://www.semiconductor-today.com/news_items/2020/jul/allos-210720.shtml
ALLOS Semiconductors (in Germany) announced its collaboration with ECO Devices Lab at King Abdullah University of Science and Technology (KAUST) for realizing high efficiency nitride-based red LEDs on large diameter silicon substrates.
https://www.ledinside.com/news/2020/7/allos_kaust_microled