Plasmonics in wide-band-gap semiconductor materials

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Location
Building 3, Level 2, Room 2255
Prof. Jing Li, Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University

Abstract

Recently, surface plasmon resonance (SPR) effect has been widely applied in wide-band-gap semiconductor materials (e.g. GaN, ZnO or TiN etc.) for emission enhancement, absorption regulation, sensitive bio- or chemical detections and so on. In this talk, different metal (Ag or Al) nanostructures were introduced into and successfully fabricated on several kinds of wide-band-gap semiconductor materials, including ZnO, AlGaN, TiN, and h-BN by template-based nanosphere lithography method and deposition techniques. Size, separation, contact mode of those metal nanostructures were well manipulated so that the local surface plasmon (LSP) coupling with the excitons and intercoupling effect can be realized to enhance the emission or absorption efficiency in either AlGaN quantum wells (QWs) or ZnO nanospheres. With regulating the shell contact mode between metal and TiN, multipole LSPR modes within the individual composite double-shell nanostructure and inter-coupling effect between the arrays were identified experimentally and theoretically. Additionally, some potential applications in light emission devices, photovoltaic devices and bio-sensing were demonstrated.

Brief Biography

Dr.Jing Li is currently a professor in Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University. She received her B.S. degree in Analytical Chemistry from Xiamen University, M.S. degree in Materials Science from National University of Singapore, and Ph.D. degree in Physics from Xiamen University. Her research interests include plasmonic manipulation in wide-band-gap semiconductors/devices, optoelectronic materials and devices (e.g. solar cells, photo detectors), and micro/nano-fabrication for energy conversion or storage.

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