About Xiaohang Li Xiaohang Li Professor, Electrical and Computer Engineering wide bandgap semiconductor optoelectronics power electronics Professor Li is a leading scholar in the research of (ultra)wide bandgap semiconductors and high density stacked transistor IC that are bringing revolutionary impacts on the optoelectronic and electronic industries. Events Presented Events Apr 19 - Apr 25, 2026 Ultra-Wide Bandgap Semiconductors for Future of Moore’s Law Xiaohang Li, Professor, Electrical and Computer Engineering Apr 23, 14:30 - 16:00 B9 R2322; Zoom Meeting 91573756864 ultra-wide bandgap advanced semiconductors wide bandgap semiconductor optoelectronics quantum engineering This colloquium will discuss the latest material, device and high density IC research based on ultra-wide bandgap semiconductors for the future of Moore’s Law at the Advanced Semiconductor Laboratory (ASL) at King Abdullah University of Science and Technology (KAUST). Aug 31 - Sep 6, 2025 (Ultra)wide Bandgap Semiconductors for Future of Moore’s Law Xiaohang Li, Professor, Electrical and Computer Engineering Aug 31, 12:00 - 13:00 B9 L3 R2325 (Ultra)wide bandgap compound semiconductors including AlN, GaN, Ga2O3 and In2O3 have attracted enormous interests. They offer markedly larger figures of merits for power and RF applications than other known semiconductors. Additionally, they can be applied for vastly impactful quantum information technologies and deep UV-visible optoelectronics. Moreover, they could be promising for More Moore, More than Moore, and Beyond Moore applications. This seminar will cover the latest material, device and IC research based on (ultra)wide bandgap semiconductors for the future of Moore’s Law. Jan 21 - Jan 27, 2024 The fourth wave: ultrawide bandgap semiconductors Xiaohang Li, Professor, Electrical and Computer Engineering Jan 21, 12:00 - 13:00 B9 L2 LH 2325 Ultrawide bandgap (UWBG) semiconductors including AlN, Ga2O3, c-BN, diamond have attracted enormous interests. They offer markedly larger figures of merits for power and RF applications than other known semiconductors. Jun 6 - Jun 12, 2021 Research on Ultrawide Bandgap Semiconductors Xiaohang Li, Professor, Electrical and Computer Engineering Jun 8, 15:00 - 16:30 KAUST Wide bandgap (WBG) semiconductors including GaN have demonstrated great success in lighting, display, electrification, and 5G communication due to superior properties and decades of R&D. Lately, the III-nitride and III-oxide ultrawide bandgap (UWBG) semiconductors with bandgap larger than GaN have attracted increasing attentions. They are regarded as the 4th wave of the inorganic semiconductors after the consequential Si, III-V, and WBG semiconductors. Because the UWBG along with other properties could enable electronics and photonics to operate with significantly greater power and frequency capability and at much shorter far−deep UV wavelengths, crucial for sustainability and health of the human society. Besides, they could be employed for the revolutionary quantum information science as the host and photonic platform. This seminar would cover the latest research by the Advanced Semiconductor Lab. It includes multi-disciplinary studies of growth, materials, physics, and devices of the UWBG semiconductors. Nov 1 - Nov 7, 2020 Ultraviolet semiconductor technologies for COVID-19 and beyond Xiaohang Li, Professor, Electrical and Computer Engineering Nov 1, 12:00 - 13:00 KAUST Ultraviolet semiconductor technologies COVID-19 COVID-19 is a wake-up call for public health and safety. Since the pandemic began, the ultraviolet (UV) technologies have been widely employed in numerous places to contain and eliminate the viruses. Although UV light is nonchemical and does not contaminate the environment, however, most of the UV light today comes from the toxic mercury lamps. In our lab and many institutions in the world, researchers are developing semiconductor-based UV technologies that are compact, reliable, and nontoxic. This seminar shows the research background and briefly discusses the research progress made by our team in a few key areas including material growth, physics, and device fabrication for UV lasers, LEDs, and photodetectors.
Ultra-Wide Bandgap Semiconductors for Future of Moore’s Law Xiaohang Li, Professor, Electrical and Computer Engineering Apr 23, 14:30 - 16:00 B9 R2322; Zoom Meeting 91573756864 ultra-wide bandgap advanced semiconductors wide bandgap semiconductor optoelectronics quantum engineering This colloquium will discuss the latest material, device and high density IC research based on ultra-wide bandgap semiconductors for the future of Moore’s Law at the Advanced Semiconductor Laboratory (ASL) at King Abdullah University of Science and Technology (KAUST).
(Ultra)wide Bandgap Semiconductors for Future of Moore’s Law Xiaohang Li, Professor, Electrical and Computer Engineering Aug 31, 12:00 - 13:00 B9 L3 R2325 (Ultra)wide bandgap compound semiconductors including AlN, GaN, Ga2O3 and In2O3 have attracted enormous interests. They offer markedly larger figures of merits for power and RF applications than other known semiconductors. Additionally, they can be applied for vastly impactful quantum information technologies and deep UV-visible optoelectronics. Moreover, they could be promising for More Moore, More than Moore, and Beyond Moore applications. This seminar will cover the latest material, device and IC research based on (ultra)wide bandgap semiconductors for the future of Moore’s Law.
The fourth wave: ultrawide bandgap semiconductors Xiaohang Li, Professor, Electrical and Computer Engineering Jan 21, 12:00 - 13:00 B9 L2 LH 2325 Ultrawide bandgap (UWBG) semiconductors including AlN, Ga2O3, c-BN, diamond have attracted enormous interests. They offer markedly larger figures of merits for power and RF applications than other known semiconductors.
Research on Ultrawide Bandgap Semiconductors Xiaohang Li, Professor, Electrical and Computer Engineering Jun 8, 15:00 - 16:30 KAUST Wide bandgap (WBG) semiconductors including GaN have demonstrated great success in lighting, display, electrification, and 5G communication due to superior properties and decades of R&D. Lately, the III-nitride and III-oxide ultrawide bandgap (UWBG) semiconductors with bandgap larger than GaN have attracted increasing attentions. They are regarded as the 4th wave of the inorganic semiconductors after the consequential Si, III-V, and WBG semiconductors. Because the UWBG along with other properties could enable electronics and photonics to operate with significantly greater power and frequency capability and at much shorter far−deep UV wavelengths, crucial for sustainability and health of the human society. Besides, they could be employed for the revolutionary quantum information science as the host and photonic platform. This seminar would cover the latest research by the Advanced Semiconductor Lab. It includes multi-disciplinary studies of growth, materials, physics, and devices of the UWBG semiconductors.
Ultraviolet semiconductor technologies for COVID-19 and beyond Xiaohang Li, Professor, Electrical and Computer Engineering Nov 1, 12:00 - 13:00 KAUST Ultraviolet semiconductor technologies COVID-19 COVID-19 is a wake-up call for public health and safety. Since the pandemic began, the ultraviolet (UV) technologies have been widely employed in numerous places to contain and eliminate the viruses. Although UV light is nonchemical and does not contaminate the environment, however, most of the UV light today comes from the toxic mercury lamps. In our lab and many institutions in the world, researchers are developing semiconductor-based UV technologies that are compact, reliable, and nontoxic. This seminar shows the research background and briefly discusses the research progress made by our team in a few key areas including material growth, physics, and device fabrication for UV lasers, LEDs, and photodetectors.
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