Dhanu's work on demonstration of aluminum nitride metal oxide semiconductor field effect transistor on sapphire substrate was accepted by Journal of Physics D: Applied Physics!

Dhanu's work on demonstration of aluminum nitride metal oxide semiconductor field effect transistor on sapphire substrate was accepted by Journal of Physics D: Applied Physics!

Haicheng's work on optimization of growth temperature and V/III ratio towards high-quality Si-doped AlN thin films on sapphire was accepted by Crystal Growth & Design!

Haicheng's work on optimization of growth temperature and V/III ratio towards high-quality Si-doped AlN thin films on sapphire was accepted by Crystal Growth & Design!

Haicheng's work on low contact resistivity at the 10−4 Ωcm2 level fabricated directly on n-type AlN was accepted by Applied Physics Letters!

Haicheng's work on low contact resistivity at the 10−4 Ωcm2 level fabricated directly on n-type AlN was accepted by Applied Physics Letters!
Please contact Prof Li for more details.

Zhiyuan's work on Signifcant improvement of ncontact performance and wall plug eficiency ofAlGaN-based deep UV LEDs by atomic layeretching was accepted by Optics Letters !

Zhiyuan's work on Signifcant improvement of ncontact performance and wall plug eficiency ofAlGaN-based deep UV LEDs by atomic layeretching was accepted by Optics Letters !

Mingtao’s work about epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD was accepted by Applied Physics Letters!

Mingtao’s work about epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD was accepted by Applied Physics Letters!

Please contact Prof Li for more details.

Zahrah's work on UV-assisted nanoimprint lithography: the impact of loading effect in silicon on nanoscale pattern of metalen was accepted by Nanoscale Advances!

Zahrah's work on UV-assisted nanoimprint lithography: the impact of loading effect in silicon on nanoscale pattern of metalen was accepted by Nanoscale Advances! 

Please contact Prof Li for more details.

Xiao's work on chemical solution deposition of (GaAl)2O3 single layer with high thickness and silver-enhanced crystal quality was accepted by CrystEngComm!

Xiao's work on chemical solution deposition of (GaAl)2O3 single layer with high thickness and silver-enhanced crystal quality was accepted by CrystEngComm!

Please contact Prof Li for more details.

 

Dhanu’s review paper about Monolithic n-Type Metal-Oxide-Semiconductor Inverter Integrated Circuits Based On Wide And Ultrawide Bandgap Semiconductors was accepted by Physica Status Solidi B: Basic Solid State Physics!

Dhanu’s review paper about Monolithic n-Type Metal-Oxide-Semiconductor Inverter Integrated Circuits Based On Wide And Ultrawide Bandgap Semiconductors was accepted by Physica Status Solidi B: Basic Solid State Physics!

Please contact Prof Li for more details.

Xiao’s work about in-situ growth of {-201} fiber-textured β-Ga2O3 semiconductor tape for flexible thin-film transistor was accepted by Advanced Electronic Materials!

Xiao’s work about in-situ growth of {-201} fiber-textured β-Ga2O3 semiconductor tape for flexible thin-film transistor was accepted by Advanced Electronic Materials!

Please contact Prof Li for more details.

Mritunjay’s work on the integration of low thermal budget In2O3 NMOS inverter and GaN HEMT for power electronics was accepted by Applied Physics Letters!

Mritunjay’s work on the integration of low thermal budget In2O3 NMOS inverter and GaN HEMT for power electronics was accepted by Applied Physics Letters!

Please contact Prof Li for more details.