Wen's work on BAlN electron blocking for UV LED is accepted by Journal of Physics D: Applied Physics!
Please contact Prof. Li for more details.
Che-Hao's work on synthesis of beta (AlGa)2O3 with record wide bandgap and composition ranges has been accepted by Applied Physics Letter!
Please contact Prof. Li for more details.
Nam-In's paper on the eye moment sensor made of flexible III-nitride thin film is accepted by Advanced Functional Materials!
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Jith's paper on the APT detect analysis of BAlN grown by MOCVD is accepted by Applied Physics Letter!
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KAUST Assistant Professor Xiaohang Li was recently selected to the inaugural Georgia Tech Alumni Association 40 Under 40 class. From an initial pool of over 250 individuals, Li and 39 of his peers were successfully nominated by a committee of 26 Georgia Tech faculty, staff, and volunteer leaders. Each nominee was scored using a 25-point rubric system.
Dhanu Chettri holds a master’s degree in electronic and communication engineering from Manipur University, India. Before joining KAUST, he worked as a senior project fellow at Council of Scientific and Industrial Research-Central Electronics Engineering Research Institute (CSIR-CEERI). Dhanu will join KAUST this fall as a Ph.D. candidate and member of the Advanced Semiconductor Laboratory under the supervision of Professor Xiaohang Li.
Vishal Khandelwal is a physics graduate from India. He obtained his master’s degree from the Indian Institute of Technology, Jodhpur, and his bachelor’s degree from the University of Delhi, India. Vishal will join KAUST in the fall of 2020 as a Ph.D. candidate and member of the Advanced Semiconductor Laboratory under the supervision of Professor Xiaohang Li.
Zhiyuan Liu, 22, is an electrical engineering graduate from the University of Electronic Science and Technology of China, China. Zhiyuan will join KAUST in the fall of 2020 as a M.S./Ph.D. candidate and member of the Advanced Semiconductor Laboratory under the supervision of Professor Xiaohang Li.
Jose Manuel Taboada Vasquez is a B.Sc. graduate in nanoscience and nanotechnology from the National Autonomous University of Mexico (UNAM), Mexico. He will join KAUST in the fall of 2020 as a M.S./Ph.D. candidate, and member of the Advanced Semiconductor Laboratory under the supervision of Professor Xiaohang Li.
Tinh's work on MOCVD growth of single phase wurtzite BAlN thin film with record high boron composition has been accepted by Applied Physics Letter!
Please contact Prof. Li for more details.
Xiao's work on Ripening of Gold clusters into Single Domain on Semiconductor Quantum Rods during Langmuir-Blodgett Deposition was accepted by Crystal Growth & Design!
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Prof. Xiaohang Li has been selected into the prestigious 40 under 40 alumni list of Georgia Institute of Technology among entrepreneurs, olympians, scientists, engineers, and explorers!
Rongyu's work on the BAlN/GaN HEMT has been accepted by Journal of Physics D: Applied Physics!
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Ronghui's paper on tapered nanopillars for metalens is accepted by IEEE Photonics Journal!
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Yuantao's work on demonstration of the first N-polar tunnel junction LED is accepted by ACS Photonics!
Please contact Prof Li for more details.