Shibin's paper on band alignment of orthorhombic Ga2O3 with GaN and AlN has been accepted by Applied Surface Science!
Please contact Prof. Li for more details.
Chuanju's work on highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer is accepted as a Rapid Communication for publication in the Japanese Journal of Applied Physics!
Please contact Prof. Li for more details.
Our patent on the BAlN HEMT technology is granted as the Japanese Patent 7024073!
The U.S. Patent 11,264,238 on Forming III-Nitride Alloys by Kaikai and Prof. Li is issued!
Zhiyuan's paper on polarization modulation for high efficiency UV LED is accepted by IEEE Photonics Journal!
Please contact Prof. Li for more details.
Wen's paper on BAlN/AlGaN superlattice is accepted by Superlattices and Microstructures!
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Xiao Tang's work on the ultra-tough flexible Ga2O3 photodetectors is accepted by ACS Applied Materials & Interfaces!
Please contact Prof. Li for more details.
Xiao Tang's paper on the chemical solution deposition of InAlGaO with tunable bandgap is accepted by Journal of the European Ceramic Society!
Please contact Prof. Li for more details.
Xiao Tang's work on the epitaxial growth of Ga2O3 on four-fold symmetry CeO2 substrate is accepted by Journal of Materials Chemistry C!
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Rongyu's work on asymmetric tunnel junctions designed by machine learning is accepted by Nanomaterials!
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Bhera's paper on the review of Ga2O3 growth has been accepted by Journal of Physics D: Applied Physics!
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KAUST faculty member Xiaohang Li was recently promoted from the rank of Assistant Professor to Associate Professor of Electrical and Computer Engineering. Since joining KAUST in January 2016, Li led his Advanced Semiconductor Laboratory (ASL) in making several important contributions in semiconductor research.
Congratulations!
Prof Li has been promoted to Associate Professor at KAUST!
Maocheng's work on record short UVC wavelength TE lasing from GaN is accepted by ACS Photonics!
Please contact Prof. Li for more details.
Researchers have made unparalleled ultrawide-bandgap semiconductors through temperature and timing, just like baking bread.