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ASL

Advanced Semiconductor Laboratory

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KAUST CEMSE ASL Chuanju
KAUST CEMSE ASL Chuanju Wang.jpeg

Chuanju's work on Ti3C2Tx MXene van der Waals gate contact for GaN high electron mobility transistors was accepted by Advanced Materials!

2023-03-06

Chuanju's work on Ti3C2Tx MXene van der Waals gate contact for GaN high electron mobility transistors was accepted by Advanced Materials! 

Please con​tact Prof. Li for more details.

  • CEMSE
  • ECE
  • ASL
Read more about Chuanju's work on Ti3C2Tx MXene van der Waals gate contact for GaN high electron mobility transistors was accepted by Advanced Materials!
CEMSE-EE-SEMCNDUCTOR-Xiao Tang
CEMSE-EE-SEMCNDUCTOR-Xiao Tang.jpg

Xiao's review paper Flexible Gallium Oxide Electronics was accepted by Semiconductor Science and Technology!

2023-03-02

Xiao's review paper Flexible Gallium Oxide Electronics was accepted by Semiconductor Science and Technology!

Please con​tact Prof. Li for more details.

  • CEMSE
  • ECE
  • ASL
Read more about Xiao's review paper Flexible Gallium Oxide Electronics was accepted by Semiconductor Science and Technology!
CEMSE-EE-SEMCNDUCTOR-Xiao Tang
CEMSE-EE-SEMCNDUCTOR-Xiao Tang.jpg

Xiao's work on flexible self-powered DUV photodetectors with high responsivity utilizing Ga2O3/NiO heterostructure on buffered Hastelloy substrates was accepted by Applied Physics Letters!

2023-02-28

Xiao's work on flexible self-powered DUV photodetectors with high responsivity utilizing Ga2O3/NiO heterostructure on buffered Hastelloy substrates was accepted by Applied Physics Letters!

Please con​tact Prof. Li for more details.

  • CEMSE
  • ECE
  • ASL
Read more about Xiao's work on flexible self-powered DUV photodetectors with high responsivity utilizing Ga2O3/NiO heterostructure on buffered Hastelloy substrates was accepted by Applied Physics Letters!
 Jose Manuel Taboada
ASL Jose Manuel Taboada.jpg

Jose's work on a self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga2O3 heterojunction was accepted by Journal of Physics D: Applied Physics

2022-12-28

Jose's work on a self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga2O3 heterojunction was accepted by Journal of Physics D: Applied Physics 

Please con​tact Prof. Li for more details.

  • CEMSE
  • ECE
  • ASL
Read more about Jose's work on a self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga2O3 heterojunction was accepted by Journal of Physics D: Applied Physics
KAUST CEMSE ASL Chuanju
KAUST CEMSE ASL Chuanju Wang.jpeg

Chuanju's work on correlative atomic coordination and interfacial charge polarity in Al2O3/GaN and Al2O3/Si heterostructures was accepted by Physica Status Solidi (RRL)

2022-12-12

Chuanju's work on correlative atomic coordination and interfacial charge polarity in Al2O3/GaN and Al2O3/Si heterostructures was accepted by Physica Status Solidi (RRL)

Please con​tact Prof. Li for more details.

Read more about Chuanju's work on correlative atomic coordination and interfacial charge polarity in Al2O3/GaN and Al2O3/Si heterostructures was accepted by Physica Status Solidi (RRL)
The metalens developed by Ph.D. student Zahrah Alnakhli and Professor Xiaohang Li could benefit optical imaging, manipulation and communications.
l705nsUo.jpeg

Metalens offers superior off-axis focus

2022-10-30
A flat all-dielectric reflector metalens design could benefit optical imaging, manipulation and communications.
  • ASL
Read more about Metalens offers superior off-axis focus
KAUST CEMSE ECE Rongyu Lin
KAUST-CEMSE-ECE-Rongyu-Lin.jpg

Rongyu's work on machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes was accepted by Journal of Materials Chemistry C!

2022-10-28

Rongyu's work on machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes was accepted by Journal of Materials Chemistry C!

Please con​tact Prof. Li for more details.

  • CEMSE
  • ECE
  • ASL
Read more about Rongyu's work on machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes was accepted by Journal of Materials Chemistry C!
KAUST CEMSE ECE ASL Zhiyuan Liu
KAUST CEMSE ECE ASL Zhiyuan Liu

Zhiyuan's work on effect of AlN strain compensation layer on InGaN quantum well red light emitting diodes beyond epitaxy was accepted by Optics Letters!

2022-10-21

Zhiyuan's work on effect of AlN strain compensation layer on InGaN quantum well red light emitting diodes beyond epitaxy was accepted by Optics Letters!

Please con​tact Prof. Li for more details.

  • CEMSE
  • ECE
  • ASL
Read more about Zhiyuan's work on effect of AlN strain compensation layer on InGaN quantum well red light emitting diodes beyond epitaxy was accepted by Optics Letters!
KAUST CEMSE ECE ASL Yi Lu
KAUST-CEMSE-ECE-ASL-Yi-Lu.png

Yi's paper on transferrable Ga2O3 membrane for vertical and flexible electronics via one-step exfoliation was accepted by ACS Applied Materials & Interfaces!

2022-10-06

Yi's paper on transferrable Ga2O3 membrane for vertical and flexible electronics via one-step exfoliation was accepted by ACS Applied Materials & Interfaces!

Please con​tact Prof. Li for more details.

  • CEMSE
  • ECE
  • ASL
Read more about Yi's paper on transferrable Ga2O3 membrane for vertical and flexible electronics via one-step exfoliation was accepted by ACS Applied Materials & Interfaces!
KAUST CEMSE ASL Chuanju
KAUST CEMSE ASL Chuanju Wang.jpeg

Chuanju's paper on origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructures was accepted by Applied Surface Science!

2022-09-26

Chuanju's paper on origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructures was accepted by Applied Surface Science!

Please con​tact Prof. Li for more details.

  • CEMSE
  • ECE
  • ASL
Read more about Chuanju's paper on origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructures was accepted by Applied Surface Science!
KAUST CEMSE ASL Zahrah
1605422976540.jpg

Zahrah's paper on reflective metalens with enhanced off-axis focusing performance was accepted by Optics Express!

2022-08-02

Zahrah's paper on reflective metalens with enhanced off-axis focusing performance was accepted by Optics Express!

Please con​tact Prof. Li for more details.

  • CEMSE
  • ECE
  • ASL
Read more about Zahrah's paper on reflective metalens with enhanced off-axis focusing performance was accepted by Optics Express!
KAUST CEMSE ECE ASL Yi Lu
KAUST-CEMSE-ECE-ASL-Yi-Lu.png

Yi's paper on ultrasensitive flexible κ-phase Ga2O3 Solar-blind photodetector was accepted by ACS Applied Materials & Interfaces!

2022-07-14

Yi's paper on ultrasensitive flexible κ-phase Ga2O3 Solar-blind photodetector was accepted by ACS Applied Materials & Interfaces!

Please con​tact Prof. Li for more details.

  • CEMSE
  • ECE
  • ASL
Read more about Yi's paper on ultrasensitive flexible κ-phase Ga2O3 Solar-blind photodetector was accepted by ACS Applied Materials & Interfaces!
Shibin Krishna
Shibin Krishna.jpg

Shibin's paper on band alignment of orthorhombic Ga2O3 with GaN and AlN has been accepted by Applied Surface Science!

2022-06-04

Shibin's paper on band alignment of orthorhombic Ga2O3 with GaN and AlN has been accepted by Applied Surface Science!


Please con​tact Prof. Li for more details.

  • CEMSE
  • ECE
  • ASL
Read more about Shibin's paper on band alignment of orthorhombic Ga2O3 with GaN and AlN has been accepted by Applied Surface Science!
KAUST CEMSE ASL Chuanju
KAUST CEMSE ASL Chuanju Wang.jpeg

Chuanju's work on highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer is accepted as a Rapid Communication for publication in the Japanese Journal of Applied Physics!

2022-04-17

Chuanju's work on highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer is accepted as a Rapid Communication for publication in the Japanese Journal of Applied Physics!

Please con​tact Prof. Li for more details.

  • CEMSE
  • ECE
  • ASL
Read more about Chuanju's work on highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer is accepted as a Rapid Communication for publication in the Japanese Journal of Applied Physics!
KAUST campus 2022
KAUST campus 2022

Our patent on the BAlN HEMT technology is granted as the Japanese Patent 7024073!

2022-03-22

Our patent on the BAlN HEMT technology is granted as the Japanese Patent 7024073!

  • CEMSE
  • ECE
  • ASL
Read more about Our patent on the BAlN HEMT technology is granted as the Japanese Patent 7024073!
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Advanced Semiconductor Lab
  • Principal Investigator of ASL
  • Xiaohang Li

    Xiaohang Li

    Associate Professor, Electrical and Computer Engineering
    • ASL
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    • ECE
    • wide bandgap semiconductor
    • optoelectronics
    • power electronics
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