Chuanju's work on Ti3C2Tx MXene van der Waals gate contact for GaN high electron mobility transistors was accepted by Advanced Materials!

Chuanju's work on Ti3C2Tx MXene van der Waals gate contact for GaN high electron mobility transistors was accepted by Advanced Materials! 

Please con​tact Prof. Li for more details.

Xiao's work on flexible self-powered DUV photodetectors with high responsivity utilizing Ga2O3/NiO heterostructure on buffered Hastelloy substrates was accepted by Applied Physics Letters!

Xiao's work on flexible self-powered DUV photodetectors with high responsivity utilizing Ga2O3/NiO heterostructure on buffered Hastelloy substrates was accepted by Applied Physics Letters!

Please con​tact Prof. Li for more details.

Jose's work on a self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga2O3 heterojunction was accepted by Journal of Physics D: Applied Physics

Jose's work on a self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga2O3 heterojunction was accepted by Journal of Physics D: Applied Physics 

Please con​tact Prof. Li for more details.

Chuanju's work on correlative atomic coordination and interfacial charge polarity in Al2O3/GaN and Al2O3/Si heterostructures was accepted by Physica Status Solidi (RRL)

Chuanju's work on correlative atomic coordination and interfacial charge polarity in Al2O3/GaN and Al2O3/Si heterostructures was accepted by Physica Status Solidi (RRL)

Please con​tact Prof. Li for more details.

Rongyu's work on machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes was accepted by Journal of Materials Chemistry C!

Rongyu's work on machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes was accepted by Journal of Materials Chemistry C!

Please con​tact Prof. Li for more details.

Zhiyuan's work on effect of AlN strain compensation layer on InGaN quantum well red light emitting diodes beyond epitaxy was accepted by Optics Letters!

Zhiyuan's work on effect of AlN strain compensation layer on InGaN quantum well red light emitting diodes beyond epitaxy was accepted by Optics Letters!

Please con​tact Prof. Li for more details.

Yi's paper on transferrable Ga2O3 membrane for vertical and flexible electronics via one-step exfoliation was accepted by ACS Applied Materials & Interfaces!

Yi's paper on transferrable Ga2O3 membrane for vertical and flexible electronics via one-step exfoliation was accepted by ACS Applied Materials & Interfaces!

Please con​tact Prof. Li for more details.

Chuanju's paper on origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructures was accepted by Applied Surface Science!

Chuanju's paper on origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructures was accepted by Applied Surface Science!

Please con​tact Prof. Li for more details.

Yi's paper on ultrasensitive flexible κ-phase Ga2O3 Solar-blind photodetector was accepted by ACS Applied Materials & Interfaces!

Yi's paper on ultrasensitive flexible κ-phase Ga2O3 Solar-blind photodetector was accepted by ACS Applied Materials & Interfaces!

Please con​tact Prof. Li for more details.

Chuanju's work on highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer is accepted as a Rapid Communication for publication in the Japanese Journal of Applied Physics!

Chuanju's work on highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer is accepted as a Rapid Communication for publication in the Japanese Journal of Applied Physics!

Please con​tact Prof. Li for more details.