Rongyu's work on machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes was accepted by Journal of Materials Chemistry C!
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Zhiyuan's work on effect of AlN strain compensation layer on InGaN quantum well red light emitting diodes beyond epitaxy was accepted by Optics Letters!
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Yi's paper on transferrable Ga2O3 membrane for vertical and flexible electronics via one-step exfoliation was accepted by ACS Applied Materials & Interfaces!
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Chuanju's paper on origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructures was accepted by Applied Surface Science!
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Zahrah's paper on reflective metalens with enhanced off-axis focusing performance was accepted by Optics Express!
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Yi's paper on ultrasensitive flexible κ-phase Ga2O3 Solar-blind photodetector was accepted by ACS Applied Materials & Interfaces!
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Shibin's paper on band alignment of orthorhombic Ga2O3 with GaN and AlN has been accepted by Applied Surface Science!
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Chuanju's work on highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer is accepted as a Rapid Communication for publication in the Japanese Journal of Applied Physics!
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Our patent on the BAlN HEMT technology is granted as the Japanese Patent 7024073!
The U.S. Patent 11,264,238 on Forming III-Nitride Alloys by Kaikai and Prof. Li is issued!
Zhiyuan's paper on polarization modulation for high efficiency UV LED is accepted by IEEE Photonics Journal!
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Wen's paper on BAlN/AlGaN superlattice is accepted by Superlattices and Microstructures!
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Xiao Tang's work on the ultra-tough flexible Ga2O3 photodetectors is accepted by ACS Applied Materials & Interfaces!
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Xiao Tang's paper on the chemical solution deposition of InAlGaO with tunable bandgap is accepted by Journal of the European Ceramic Society!
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Xiao Tang's work on the epitaxial growth of Ga2O3 on four-fold symmetry CeO2 substrate is accepted by Journal of Materials Chemistry C!
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