Google Scholar
Paper writing checklist by Prof Xiaohang Li.<pdf>
Book Chapters and Special Technical Reports
- III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors, Volume 96, Semiconductors and Semimetals series, Elsevier. <link>
- "Sapphire substrates slash the cost of deep UV lasers", Editorial of Compound Semiconductor Magazine, June 2016. <pdf>
- Future Developments in MOVPE, Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications, Wiley. <link>.
- Ultraviolet Lasers, Nanoscale Semiconductor Lasers, Elsevier. <link>
Journal Papers
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C Wang, Y Lu, CH Liao, S Chandroth, S Yuvaraja, X Li*, "Highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer," Japanese Journal of Applied Physics - Rapid Communication accepted (2022).
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Z Liu, Y Lu, Y Wang, R Lin, C Xiong, X Li*, "Polarization modulation at last quantum barrier for high efficiency AlGaN-based UV LED," IEEE Photonics Journal 14, 8210208 (2022).<pdf>
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W Gu, Y Lu, Z Liu, CH Liao, J Yan, J Wang, J Li, X Li*, "Enhanced hole concentration in strain-compensated BAlN/AlGaN superlattice for deep ultraviolet light-emitting diodes," Micro and Nanostructures accepted (2022).
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X. Tang, K.-H. Li, Y. Zhao, H. Liang, Z. Liu, U. Buttner, C.-H. Liao, L. Braic, Z. Mei, X. Du, W. Tang, X. Li*, “Quasi-epitaxial Growth of β-Ga2O3 Coated Wide Bandgap Semiconductor Tape for Flexible UV Photodetectors,” ACS Appl. Mater. Interfaces. 14, 1304 (2022).<pdf>
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Z. Yan, S. Li, Z. Liu, W. Liu, F. Qiao, P. Li, J. Dai, Y. Wang, Y. Zhi, J. Yue, X. Ji, X. Tang, X. Li, Z. Wu, and W. Tang, “Ti3C2/ε-Ga2O3 Schottky Self-powered Solar-blind Photodetector with Robust Responsivity,” IEEE J. Sel. Top. Quantum Electron. 28, 3803208 (2022).<pdf>
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X. Tang, K.-H. Li, C.-H. Liao, J. Taboada, C. Wang, N. Xiao, and X. Li*, “Chemical solution deposition of epitaxial indium and aluminum doped Ga2O3 thin-films on sapphire with tunable bandgaps,” J. Eur. Ceram. Soc. 42, 175 (2022).<pdf>
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X. Tang, K.-H. Li, C.-H. Liao, D. Zheng, C. Liu, S. Krishna, J. Taboada, and X. Li*, “Epitaxial growth of β-Ga2O3 (-201) thin film on fourfold symmetry CeO2 (001) substrate for heterogeneous integrations,” J. Mater. Chem. C 9, 15868 (2021).<pdf>
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R. Lin, P. Han, Y. Wang, R. Lin, Y. Lu, Z. Liu, X. Zhang, and X. Li*, “Low resistance asymmetric III- nitride tunnel junctions designed by machine learning,” Nanomaterials 11, 2466 (2021).<pdf>
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F. AlQatari, M. Sajjad, R. Lin, K.-H. Li, U. Schwingenschlög, and X. Li*, “Lattice-matched III-nitride structures comprising BAlN, BGaN, and AlGaN for ultraviolet applications,” Mater. Res. Express 8, 086202 (2021).<pdf>
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B. R. Tak, S. Kumar, A. K. Kapoor, D. Wang, X. Li, H. Sun and R. Singh, “Recent advances in the growth of gallium oxide thin films employing various growth techniques-A review,” J. Phys. D: Appl. Phys. 54, 453002 (2021).<pdf>
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Z. Zheng, Q. Chen, A. Wang, R. Liang, Y. Zhang, M. Shan, F. Wu, W. Zhang, C. Chen, J. Dai, X. Li, "Enhanced light extraction efficiency via double nano-pattern arrays for high-efficiency deep UV LEDs," Opt. Laser Technol. 143, 107360 (2021).<pdf>
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M. Shan, Y. Zhang, M. Tian, R. Lin, J. Jiang, Z. Zheng, Y. Zhao, Y. Lu, Z. Feng, W. Guo, J. Dai, C. Chen, F. Wu, X. Li*, “Transverse electric lasing at record short wavelength 244.63 nm from GaN quantum wells with weak exciton localization,” ACS Photonics 8, 1264 (2021).<pdf>
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Y. Lu, C. Wang, V. P. D. Oliveira, Z. Liu, and X. Li*, “UV light-emitting diode with buried polarization-induced n-AlGaN/InGaN/p-AlGaN tunneling junction,” IEEE Photonics Technol. Lett. 33, 16 (2021).<pdf>
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S. Kaushik, T. Naik, M. Ravikanth, C.-H. Liao, X. Li, VR Rao, R Singh, “Organic passivation of AlGaN epilayers using self-assembled monolayer of Zn(II) porphyrin for improved solar-blind photodetector performance,” Semicond. Sci. Technol. 36, 055001 (2021).<pdf>
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M Cui, W Guo, H Xu, J Jiang, L Chen, S Mitra, IS Roqan, H Jiang, X. Li, and Y. Ye, “EvidenM Cuice of carrier localization in AlGaN/GaN based ultraviolet multiple quantum wells with opposite polarity domains provided by nanoscale imaging,” Phys. Status Solidi Rapid Res. Lett. 2121, 2100035 (2021).<pdf>
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W. Gu, Y. Lu, R. Lin, W. Guo, Z.-H. Zhang, J.-H. Ryou, J. Yan, J. Wang, J. Li, and X. Li*, "BAlN for III-nitride UV light emitting diodes: undoped electron blocking layer," J. Phys. D: Appl. Phys. 54, 175104 (2021).<pdf>
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R. Lin, Z. Alnakhli, and X. Li*, “Engineering of multiple bound states in the continuum by latent representation of freeform structures,” Photonics Res. 9, 4 (2021).<pdf>
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C.-H. Liao, K.-H. Li, C. G Torres-Castanedo, G. Zhang, and X. Li*, “Wide-range tunable bandgap β-phase (AlGa)2O3 thin film by thermal annealing,” Appl. Phys. Lett. 118, 032103 (2021).<pdf>
- N.-I. Kim, J. Chen, W. Wang, M. Moradnia, S. Pouladi, M.-K. Kwon, J.-Y. Kim, X. Li, and J.-H. Ryou, “Highly-Sensitive Skin-Attachable Eye-Movement Sensor Using Flexible Non-Hazardous Piezoelectric Thin Film,” Adv. Funct. Mater. 31, 2008242, (2021).<pdf>
- J. Sarker, T. B. Tran, C.-H. Liao, F. Alqatari, X. Li*, B. Mazumder*, “Nanoscale compositional analysis of wurtzite BAlN thin film using atom probe tomography,” Appl. Phys. Lett. 117, 232103 (2020). <pdf>
- J. Shi, Y. Zhao, Y. Wu, J. Chu, X. Tang, X. Li, X. Yu, W. Wu. G. Jiang, H. Suo, and Z. Jin, "Pyrolysis Behaviors Dominated by Reaction-Diffusion Mechanism in Fluorine-Free Metal Organic Decomposition Process" J. Mater. Chem. C, 8, 17417 (2020).<pdf>
- T. B. Tran, C.-H. Liao, F. Alqatari, and X. Li*, “Demonstration of single-phase wurtzite BAlN with over 20% boron content by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 117, 082102 (2020).<pdf>
- X. Tang and X. Li*, “Ripening of gold clusters into single domain on semiconductor quantum rods during Langmuir-Blodgett deposition,” Cryst. Growth Des. 20, 9, 5890 (2020).<pdf>
- R. Lin, X. Liu, K. Liu, Y. Lu, X. Liu, X. Li*, " BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN/AlGaN heterostructures," J. Phys. D: Appl. Phys. 53, 48 (2020).<pdf>
- R. Lin, Z. Alnakhli, F. AlQatari, and X. Li*, “Design of dielectric reflective metalens: analysis of tapered nanopillars,” IEEE Photonics J. 12, 4 (2020).<pdf>
- Y. Zhang, G. Deng, Y. Yu, Y. Wang, D. Zhao, Z. Shi, B. Zhang, X. Li*“Demonstration of N-polar III-nitride tunnel junction LED,” ACS Photonics 7 (7), 1723 (2020). <pdf>
- I. Ajia, D. Almalawi, Y. Lu, S. Lopatin, X. Li, Z. Liu, and I. Roqan, “Sub-quantum-well influence on carrier dynamics in high efficiency DUV dislocation-free AlGaN/AlGaN-based multiple-quantum-wells,” ACS Photonics 7 (7), 1667 (2020).<pdf>
- C. G. Torres-Castanedo, K. H. Li, L. Braic, and X. Li*, “Determination of band offsets of Ga2O3:Si/FTO heterojunction for current spreading for high temperature and UV applications,” J. Phys. D: Appl. Phys. 53, 314003 (2020). <pdf>
- W. Guo, L. Chen, H. Xu, Y. Qian, M. Sheikhi, J. Hoo, S. Guo, L. Xu, J. Liu, F. Alqatari, X. Li, K. He, Z. C. Feng, and J. Ye, “Revealing the surface electronic structures of AlGaN deep ultraviolet multiple-quantum-wells with lateral polarity domains,” Photonics Res. 8, 812 (2020) <pdf>
- W. Wang, J. Chen, J. S. Lundh, S. Shervin, S. K. Oh, S. Pouladi, Z. Rao, J.-Y. Kim, M.-K. Kwon, X. Li, S. Choi, and J.-H. Ryou, "Modulation of the 2-Dimensional Electron Gas Channel in Flexible AlGaN/GaN High-Electron-Mobility Transistors by Mechanical Bending," Appl. Phys. Lett. 116, 123501 (2020). <pdf>
- R. Lin, Y. Zhai, C. Xiong, and X. Li*, “Inverse design of plasmonic metasurfaces by convolutional neural network,” Opt. Lett. 45, 11362 (2020). <pdf>
- J. Hou, B. Yang, X. Li, C. Ma, B. Wang, H. Long, C. Yang, and S. Chen, "Efficient and stable thin film crystalline silicon solar cell by introducing rotation factor in surface square-pillar-array-grating," J. Nanophotonics 14, 016008 (2020). <pdf>
- N. Alfaraj, W. Alghamdi, M. Alawein, I. Ajia, D. Priante, B. Janjua, H. Sun, T. Ng, B. Ooi, I. Roqan, X. Li, "Time–Energy Quantum Uncertainty—Quantifying the Effectiveness of Surface Defect Passivation Protocols for Low-Dimensional Semiconductors," ACS Appl. Electron. Mater. 2020, 409 (2020). <pdf>
- R. Lin, V. Mazzone, N. Alfaraj, J. Liu, X. Li*, and A. Fratalocchi*, "On‐Chip Hyperuniform Lasers for Controllable Transitions in Disordered Systems," Laser & Photonics Rev. 2020, 1800296 (2020). <pdf>
- Z. Liu, Y. Zhi, S. Li, Y. Liu, X. Tang, Z. Yan, P. Li, X. Li, D. Guo, Z. Wu, and W. Tang, "Comparison of optoelectrical characteristics between Schottky and Ohmic contacts to β-Ga2O3 thin film," J. Phys. D: Appl. Phys. 53, 085105 (2020). <pdf>
- X. Li*, R. D. Dupuis, T. Wernicke, “Semiconductor UV photonics: feature introduction,” Photon. Res. 7, SUVP1 (2019). <pdf>
- Q. Chen, J. Dai, X. Li, Y. Gao, H. Long, Z.-H. Zhang, C. Chen, and H.-C. Kuo, “Enhanced optical performance of AlGaN-based deep ultraviolet light-emitting diodes by electrode patterns design,” IEEE Electron Device Lett. 40, 1925 (2019). <pdf>
- M. Shan, Y. Zhang, T. B. Tran, J. Jiang, H. Long, Z. Zheng, A. Wang, W. Guo, C. Chen, J. Dai, and X. Li, “Deep UV laser at 249 nm based on GaN quantum wells,” ACS Photonics 6, 2387 (2019). <pdf>
- W. Guo, S. Mitra, J. Jiang, H. Xu, M. Sheikhi, H. Sun, K. Tian, Z.-H. Zhang, H. Jiang, I. Roqan, X. Li, and J. Ye, " Three-dimensional band diagram in lateral polarity junction III-nitride heterostructures," Optica 6, 1058 (2019). <pdf>
- M. Garg, A. Kumar, H. Sun, C.-H. Liao, X. Li, and R. Singh, "Temperature dependent electrical studies on Cu/AlGaN/GaN Schottky barrier diodes with its microstructural characterization," J. Alloys Compd. 806, 852 (2019). <pdf>
- R. Lin and X. Li*, "Multifocal metalens based on multilayer Pancharatnam-Berry phase elements architecture," Opt. Lett. 44, 2819 (2019). <pdf>
- Y. Lu, J. Yan, X. Li, Y. Guo, Z. Wu, L. Zhang, W. Gu, J. Wang, and J. Li, "On the Carrier Regulation and Performance Enhancement of N-polar AlGaN-based LED with Grading Quantum Barriers," Acta. Phys. Sin. 48, 0723001 (2019). <pdf>
- B. R. Tak, M. Garg, S. Dewan, C. G. Torres-Castanedo, K.-H. Li, V. Gupta, X. Li, and R. Singh, "High-Temperature Photocurrent Mechanism of β-Ga2O3 Based Metal-Semiconductor-Metal Solar-Blind Photodetectors," J. Appl. Phys 125, 144501 (2019). <pdf>
- J. Dai, J. Chen, X. Li, J. Zhang, H. Long, H.-C. Kuo, Y. He, and C. Chen, "Ultraviolet polarized light emitting and detecting dual-functioning device based on nonpolar n-ZnO/i-ZnO/p-AlGaN heterojunction," Opt. Lett. 44(8), 1944 (2019). <pdf>
- Z. Ren, Y. Lu, H. Sun, H.-H. Yao, C.-H. Liao, J. Dai, C. Chen, J.-H. Ryou, J. Yan, J. Wang, J. Li, and X. Li, “III-nitride Deep UV LED without Electron Blocking Layer,” IEEE Photon. J. 11(2), 8200511 (2019). <pdf>
- N. Susilo, M. Schilling, M. Narodovitch, H.-H. Yao, X. Li, B. Witzigmann, J. Enslin, M. Guttmann, M. Rychetsky, I. Koslow, T. Wernicke, T. Niermann., M. Lehmann, and M. Kneissl, "Precise determination of polarization fields in c-plane GaN/AlxGa1−xN/GaN heterostructures with capacitance-voltage-measurements," Jpn. J. Appl. Phys 58, SCCB08 (2019). <pdf>
- D. Priante, M. Tangi, J.-W. Min, N. Alfaraj, J.-W. Liang, H. Sun, H. H. Alhashim, X. Li, A. M. Albadri, A. Y. Alyamani, T. K. Ng, and B. S. Ooi, “Enhanced electro-optic performance of surface-treated nanowires: origin and mechanism of nanoscale current injection for reliable ultraviolet light-emitting diodes,” Opt. Mater. Express. 1, 203 (2019). <pdf>
- C. Kai, X. Sun, Y. Jia, Z. Shi, K. Jiang, J. Ben, Y. Wu, Y. Wang, H. Liu, X. Li, and D. Li, "Carrier behavior in the vicinity of pit defects in GaN character-ized by ultraviolet light-assisted Kelvin probe force microscopy," Sci. China. Phys. Mech. J. 62, 067311 (2019). <pdf>
- H. Sun and X. Li, "Recent Advances on III-Nitride Nanowire Light Emitters on Foreign Substrates – Toward Flexible Photonics," Phys. Status Solidi A 216, 1800420 (2019). <pdf>
- M. Garg, T. Naik, R. Pathak, V. R. Rao, C.-H. Liao, K.-H. Li, H. Sun, X. Li, and R. Singh, "Surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalized-Porphyrin based organic molecules," J. Appl. Phys. 124, 195702 (2018). <pdf>
- H. Sun, Y. J. Park, K.-H. Li, X. Liu, T. Detchprohm, X. Zhang, R. D. Dupuis, and X. Li*, “Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application,” Appl. Surf. Sci. 458, 949 (2018). <pdf>
- H. Sun, D. Priante, J.-W. Min, R. C. Subedi, M. K. Shakfa, Z. Ren, K.-H. Li, R. Lin, C. Zhao, T. Ng, J.-H. Ryou, X. Zhang, B. S. Ooi, and X. Li*, "Graded-Index Separated Confinement Heterostructure AlGaN Nanowires: Towards Ultraviolet Laser Diodes Implementation," ACS Photonics, 5, 3305 (2018). <pdf>
- S. Singh, S. Shervin, H. Sun, M. Yarali, J. Chen, R. Lin, K.-H. Li, X. Li, J.-H. Ryou, A. Mavrokefalos, "Using Mosaicity to Tune Thermal Transport in Polycrystalline AlN Thin Films," ACS Appl. Mater. Inter. 10, 20085 (2018). <pdf>
- W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, R. Lin, A. Giugni, E. D. Fabrizio, X. Li, and J. Ye, "Lateral-Polarity-Structure of AlGaN Quantum Wells: A Promising Approach for Enhancing the Ultraviolet Luminescence," Adv. Funct. Mater. 28, 1802395 (2018). <pdf><supplementary>
- L. Yan, Y. Zhang, X. Han, G. Deng, P. Li, Y. Yu, L. Chen, X. Li, and J.-F. Song, “Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 112, 182104 (2018). <pdf>
- R. Lin, S. V. Galan, H. Sun, Y. Hu, M. S. Alias, B. Janjua, T. K. Ng, B. S. Ooi, and X. Li*, “Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations,” Photon. Res. 6, 124 (2018). <pdf>
- H. Sun, K.-H. Li, C. G. T. Castanedo, S. Okur, G. S. Tompa, T. Salagaj, S. Lopatin, A. Genovese, and X. Li*, "HCl flow-induced phase change of α-, β- and ε-Ga2O3 films grown by MOCVD," Cryst. Growth Des. 18, 2370 (2018). <pdf>
- K.-H. Li, H. S. Alotaibi, H. Sun, R. Lin, W. Guo, C. G. Torres, K. Liu, S. V. Galan, and X. Li, “Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling,” J. Cryst. Growth 488, 16 (2018). <pdf>
- J. Hou, C. Yang, X. Li, Z.-Z. Cao, and S. Chen, “Enhanced complete photonic band gap in moderate refractive index contrast chalcogenide-air system with connected-annular-rods photonic crystals,” Photon. Res 6 (4), 282 (2018). <pdf>
- S. Shervin, S. K. Oh, H. J. Park, K.-H. Lee, M. Asadirad, S.-H. Kim, J. Kim, S. Pouladi, S.-N. Lee, X. Li, J. S. Kwak, and J. H. Ryou “Flexible Deep-Ultraviolet Light-Emitting Diodes for Significant Improvement of Quantum Efficiencies by External Bending,” J. Phys. D: Appl. Phys. 51, 105105 (2018). <pdf>
- H. Sun, M. K. Shakfa, M. Mufasila, B. Janjua, K.-H. Li, R. Lin, I. Roqan, B. Ooi, and X. Li*, "Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes," ACS Photonics 5, 964 (2018). <pdf>
- H. Sun, F. Wu, Y. J. Park, T. M. Al tahtamouni, W. Guo, N. Alfaraj, K.-H. Li, D. H. Anjum, T. Detchprohm, R. D. Dupuis, and X. Li*, “Microstructure revealing and dislocation behavior in BAlN/AlGaN heterostructures,” Appl. Phys. Express 11, 011001 (2018). <pdf>
- N. Alfaraj, M. M. Muhammed, K.-H. Li, B. Janjua, R. A. Aljefri, H. Sun, T. K. Ng, B. S. Ooi, I. S. Roqan, and X. Li, “Thermodynamic photoinduced disorder in AlGaN nanowires,” AIP Adv. 7, 125113 (2017). <pdf>
- K. Liu, H. Sun, F. AlQatari, W. Guo, X. Liu, J. Li, C. G T. Castanedo, and X. Li, "Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering," Appl. Phys. Lett. 111 (22), 222106 (2017). <pdf>
- H. Sun, C. G. T. Castanedo, K. Liu, K.-H. Li, W. Guo, R. Lin, X. Liu, J. Li, and X. Li, “Valence and conduction band offsets of β-Ga2O3/AlN heterojunction,” Appl. Phys. Lett. 111 (16), 162105 (2017). <pdf>
- H. Sun, Y. Park, K.-H. Li, C. G. T. Castanedo, A. S. Alowayed, T. Detchprohm, R. D. Dupuis, and X. Li*, “Band alignment of B0.14Al0.86N / Al0.7Ga0.3N heterojunction,” Appl. Phys. Lett. 111 (12), 122106 (2017). <pdf>
- X. Sun, Z. Zhang, A. Chaaban, T. K. Ng, C. Shen, R. Chen, J. Yan, H. Sun, X. Li, J. Wang, J. Li, M.-S. Alouini, and B. S. Ooi, “71-Mbit/s Ultraviolet-B LED Communication Link based on 8-QAM-OFDM Modulation”, Opt. Express 25 (19), 23267 (2017). <pdf>
- J. Hou, W. Hong, X. Li, C. Yang, and S. Chen, “Biomimetic spiral grating for stable and highly efficient absorption in crystalline silicon thin-film solar cells,” Opt. Express 25(20), A922-A931 (2017). <pdf>
- H. Sun, F. Wu, T. M. Al tahtamouni, N. Alfaraj, K.-H. Li, T. Detchprohm, R. D. Dupuis, and X. Li*, “Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate,” J. Phys. D: Appl. Phys. 50, 395101 (2017). <pdf>
- S. Wang, X. Li, A. M. Fischer, T. Detchprohm, R. D. Dupuis, and F. A. Ponce, “Crystal structure of BAlN thin films: effect of boron concentration in the gas flow,” J. Cryst. Growth 475, 334 (2017). <pdf>
- A. Prabaswara, D. Stowe, B. Janjua, T. K. Ng, D. H. Anjum, P. Longo, C. Zhao, R. T. Elafandy, X. Li, A. Alyamani, M. El-Desouki, and B. S. Ooi, “Spatially resolved investigation of competing nanocluster emission in quantum-disks-in-nanowires structure characterized by nanoscale cathodoluminescence,” J. Nanophoton. 11(2), 026015 (2017). <pdf>
- M. Zhang and X. Li, “Structural and Electronic Properties of Wurtzite BxAl1-xN from First-Principles Calculations”, Phys. Status Solidi B, 254 (8), 1600749 (2017). <pdf>
- F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D: Appl. Phys. 50, 245101 (2017). <pdf>
- H. Sun, F. Wu, Y. J. Park, T. M. Al tahtamouni, K.-H. Li, N. Alfaraj, T. Detchprohm, R. D. Dupuis, andX. Li*, “Influence of TMAl preflow on AlN epitaxy on sapphire,” Appl. Phys. Lett. 110, 192106 (2017). <pdf>
- N. Alfaraj, S. Mitra, F. Wu, I. Ajia, B. Janjua, A. Prabaswara, R. A. Aljefri, H. Sun, T. K. Ng, B. S. Ooi, I. S. Roqan, and X. Li, “Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires,” Appl. Phys. Lett. 110, 161110 (2017). <pdf>
- X. Li, S. Wang, H. Liu, F. A. Ponce, T. Detchprohm, R. D. Dupuis “100-nm thick single-phase wurtzite BAlN films with boron contents over 10%,” Phys. Status Solidi B 254 (8), 1600699 (2017). <pdf>
- B. Janjua*, H. Sun*, C. Zhao, D. H. Anjum, D. Priante, A. A. Alhamoud, F. Wu, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, and B. S. Ooi, “Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates”, Opt. Express 25, 2 (2017). <pdf>
- B. Janjua*, H. Sun*, C. Zhao, D. H. Anjum, F. Wu, A. A. Alhamoud, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, and B. S. Ooi, “Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy”, Nanoscale 9, 7805 (2017). <pdf>
- X. Li, H. Xie, J. H. Ryou, F. A. Ponce, T. Detchprohm, and R. D. Dupuis, “Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells,” Appl. Phys. Lett. 107, 241109 (2015). <pdf>
- X. Li, T. T. Kao, M. Satter, S. Wang, Y. Wei, H. Xie, S. C. Shen, P. D. Yoder, A. Fischer, and F. A. Ponce, T. Detchprohm, and R. D. Dupuis, “Demonstration of transverse-magnetic dominant deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers on sapphire substrates,” Appl. Phys. Lett. 106, 041115 (2015). <pdf>
- X. Li, Y. O. Wei, S. Wang, H. Xie, T. T. Kao, M. Satter, S. C. Shen, P. D. Yoder, T. Detchprohm, R. D. Dupuis, A. Fischer, and F. A. Ponce, “Temperature dependence of crystalline quality of AlN layer grown on sapphire substrate by metalorganic chemical vapor deposition,” J. Cryst. Growth 414, 76-78 (2015). <pdf>
- X. Li, S. Wang, Y. O. Wei, H. Xie, T. T. Kao, M. Satter, S. C. Shen, P. D. Yoder, T. Detchprohm, R. D. Dupuis, A. Fischer, and F. A. Ponce, “Growth of high-quality AlN layer on sapphire substrate at relatively low temperatures by metalorganic chemical vapor deposition,” Phys. Status Solidi B 252(5), 1089 (2015). <pdf>
- X. Li, G. Le Gac, S. Bouchoule, Y. El Gmili, G. Patriarche, S. Sundaram, P. Disseix, F. Réveret, J. Leymarie, J. Streque, F. Genty, J-P. Salvestrini, R. D. Dupuis, X. Li, P. L. Voss, and A. Ougazzaden, “Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm,” J. Cryst. Growth 432, 37 (2015). <pdf>
- X. Li, T. Detchprohm, T. T. Kao, M. Satter, S. C. Shen, P. D. Yoder, R. D. Dupuis, S. Wang, Y. Wei, H. Xie, A. Fischer, F. A. Ponce, T. Wernicke, C. Reich, M. Martens, and M. Kneissl, “Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates,” Appl. Phys. Lett. 105, 141106 (2014). <pdf>
- M. M. Satter, Z. Lochner, T. T. Kao, Y. S. Liu, X. Li, S. C. Shen, J. H. Ryou, R. D. Dupuis, P. D. Yoder. “AlGaN-Based Vertical Injection Laser Diodes Using Inverse Tapered p-Waveguide for Efficient Hole Transport,” IEEE J. of Quantum Electron. 50, 166 (2014). <pdf>
- M. M. Satter, Z. Lochner, T. T. Kao, Y. S. Liu, X. Li, S. C. Shen, J. H. Ryou, R. D. Dupuis, P. D. Yoder. “Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high power opto and microelectronic applications,” Phys. Status Solidi C 11, 828 (2014). <pdf>
- Y. S. Liu, Z. Lochner, T. T. Kao, M. M. Satter, X. Li, J. H. Ryou, S. C. Shen, P. D. Yoder, T. Detchprohm, R. D. Dupuis, Y. Wei, H. Xie, A. Fischer and F. Ponce, “Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates,” Phys. Status Solidi C 11, 258 (2014). <pdf>
- X. Li, P. F. Zhu, G. Y. Liu, J. Zhang, R. B. Song, Y. K. Ee, P. Kumnorkaew, and J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by using 2-D Close-Packed TiO2 Microsphere Arrays,” IEEE J. Display Technol. 9, 5, 324 (2013). <pdf>
- Z. Lochner, X. Li, T. T. Kao, M. Satter, H. J. Kim, S. C. Shen, P. D. Yoder, A. Fischer, and F. A. Ponce, J. H. Ryou, and R. D. Dupuis, “Stimulated emission at 257 nm from AlGaN/AlN heterostructure on AlN substrate,” Phys. Status Solidi A 210, 9, 1768 (2013). <pdf>
- T. T. Kao, Y. S. Liu, M. M. Satter, X. Li, Z. Lochner, P. D. Yoder, T. Detchprohm, R. D. Dupuis, S. C. Shen, , J. H. Ryou, A. M. Fischer,Y. Wei, H. Xie, F. A. Ponce, “Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors,” Appl. Phys. Lett. 103, 211103 (2013). <pdf>
- Z. Lochner, T. T. Kao, Y. S. Liu, X. Li, M. M. Satter, S. C. Shen, P. D. Yoder, J. H. Ryou, R. D. Dupuis, “Deep-Ultraviolet Lasing at 243 nm from Photo-Pumped AlGaN/AlN Heterostructure on AlN Substrate,” Appl. Phys. Lett. 102, 101110 (2013). <pdf>
- C. K. Tan, J. Zhang, X. Li, G. Y. Liu, B. O. Tayo, and N. Tansu, “First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters,” IEEE J. Display Technol. 9, 4, 272 (2013). <pdf>
- W. H. Koo, W. Youn, P. F. Zhu, X. Li, N. Tansu, and F. So, “Light extraction of organic light emitting diodes using defective hexagonal-close-packed array,” Adv. Funct. Mater. 22, 3454 (2012). <pdf>
- G. Y. Liu, J. Zhang, X. Li, G. S. Huang, T. Paskova, K. R. Evans, H. P. Zhao, and N. Tansu, “Metalorganic Vapor Phase Epitaxy and Characterizations of Nearly-Lattice-Matched AlInN Alloys on GaN / Sapphire Templates and Free-Standing GaN Substrates,” J. Cryst. Growth 340, 66 (2011). <pdf>
- W. Cao, J. Biser, Y. K. Ee, X. Li, N. Tansu, H. M. Chan, and R. P. Vinci, “Dislocation structure of GaN films grown on planar and nano-patterned sapphire,” J. Appl. Phys. 110, 053505 (2011). <pdf>
- X. Li, R. B. Song, Y. K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes with Colloidal Microlens Arrays with Various Aspect Ratios,” IEEE Photon. J. 3, 3, 489 (2011). <pdf>
- N. Tansu, H. P. Zhao, G. Y. Liu, X. Li, J. Zhang, H. Tong, and Y. K. Ee, “Breakthrough in Photonics 2009: III-N Photonics,” IEEE Photon. J. 2, 236 (2010). <pdf>
- X. Li, H. Tong, H. Zhao, and N. Tansu, “Band Structure Calculation of Dilute-As GaNAs by First Principle,” Proc. of the SPIE Photonics West 7597, 75970H1 (2010). <pdf>
- Y. K. Ee, X. Li, J. E. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE Nucleation Studies of III-Nitride Light-Emitting Diodes on Nano-Patterned Sapphire,” J. Crys. Growth 312, 1311 (2010). <pdf>
- H. Zhao, G. Liu, X. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, “Design and Characteristics of Staggered InGaN Quantum Well Light-Emitting Diodes in Green Spectral Regimes” IET Optoelectron. 3, 283 (2009). <pdf>
- H. P. Zhao, G. Y. Liu, X. Li, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, “Growths of Staggered InGaN Quantum Wells Light-Emitting Diodes Emitting at 520-525 nm Employing Graded Growth-Temperature Profile,” Appl. Phys. Lett. 95, 061104, (2009). <pdf>
Works Featured in Media
- "Reducing the loss of light at the surface of semiconductor nanostructures," Phys.org
- "KAUST And SMI Show One-step Tuning Of Gallium Oxide Phases," Compound Semiconductor
- "Cleaning nanowires to get out more light," KAUST Discovery
- "Fine tuning boron content in nitride alloys," Semiconductor Today
- "Taking control at the junction," KAUST Discovery
- “KAUST Team Cleans Nanowires For More Efficient UVLEDs,” Compound Semiconductor
- "KAUST/Georgia Tech team determines band alignment at BAlN/AlGaN heterojunction," Semiconductor Today
- “KAUST Predicts Polarisation-free III-nitride Heterojunctions On C-plane,” Compound Semiconductor
- “Researchers Determine Electronic Properties of Interface Between Two Wide Bandgap Semiconductors,” AZO Materials
- “Semiconductors with an aligned interface,” Phys.org & KAUST Discovery & Nanowerk
- “Researchers Discover Unique BAlN Properties,” Compound Semiconductor
- “KAUST Team Reports Record-breaking UV LED Comms,” Compound Semiconductor
- “Keeping the heat out,” KAUST Discovery
- “Researchers Reveal Secrets Of Metalorganic Preflow For AlN MOCVD Process,” Compound Semiconductor
- “Faculty Focus: Xiaohang Li,” KAUST News
- “KAUST Team Reveals Thermodynamic Disorder In GaN-based Nanowires,” Compound Semiconductor
- “Thermodynamic disorder in GaN-based nanowires,” Nanowerk
- “Researchers Simplify Fabrication Of Nanowire UV-LEDs On Silicon,” Compound Semiconductor
- “UV LEDs: solving the droop issue,” EE Times Europe
- “KAUST Team Grows Droop-Free UVLEDs On Metal/Silicon Substrate,” Compound Semiconductor
- “Growing thicker, more boron rich BAlN,” Compound Semiconductor
- “Sapphire substrates slash the cost of deep UV lasers,” Editorial of Compound Semiconductor