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Paper writing checklist by Prof Xiaohang Li.<pdf>

Book Chapters and Special Technical Reports

  1. III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors, Volume 96, Semiconductors and Semimetals series, Elsevier. <link>
  2. "Sapphire substrates slash the cost of deep UV lasers", Editorial of Compound Semiconductor Magazine, June 2016. <pdf>
  3. Future Developments in MOVPE, Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications, Wiley. <link>.
  4. Ultraviolet Lasers, Nanoscale Semiconductor Lasers, Elsevier. <link>

Journal Papers

  1. M Cui, W Guo, H Xu, J Jiang, L Chen, S Mitra, IS Roqan, H Jiang, X. Li, and Y. Ye, “Evidence of carrier localization in AlGaN/GaN based ultraviolet multiple quantum wells with opposite polarity domains provided by nanoscale imaging,” Phys. Status Solidi Rapid Res. Lett. accepted (2021).

  2.  W. Gu, Y. Lu, R. Lin, W. Guo, Z.-H. Zhang, J.-H. Ryou, J. Yan, J. Wang, J. Li, and X. Li*, "BAlN for III-nitride UV light emitting diodes: undoped electron blocking layer," J. Phys. D: Appl. Phys. 54, 175104 (2021).<pdf>



  3. R. Lin, Z. Alnakhli, and X. Li*, “Engineering of multiple bound states in the continuum by latent representation of freeform structures,” Photonics Res. in press (2021).

  4. C.-H. Liao, K.-H. Li, C. G Torres-Castanedo, G. Zhang, and X. Li*, “Wide-range tunable bandgap β-phase (AlGa)2O3 thin film by thermal annealing,” Appl. Phys. Lett. 118, 032103 (2021).<pdf>



  5. N.-I. Kim, J. Chen, W. Wang, M. Moradnia, S. Pouladi, M.-K. Kwon, J.-Y. Kim, X. Li, and J.-H. Ryou, “Highly-Sensitive Skin-Attachable Eye-Movement Sensor Using Flexible Non-Hazardous Piezoelectric Thin Film,” Adv. Funct. Mater. 31, 2008242, (2021).<pdf4


  6. J. Sarker, T. B. Tran, C.-H. Liao, F. Alqatari, X. Li*, B. Mazumder*, “Nanoscale compositional analysis of wurtzite BAlN thin film using atom probe tomography,” Appl. Phys. Lett. 117, 232103 (2020). <pdf5


  7. J. Shi, Y. Zhao, Y. Wu, J. Chu, X. Tang, X. Li, X. Yu, W. Wu. G. Jiang, H. Suo, and Z. Jin, "Pyrolysis Behaviors Dominated by Reaction-Diffusion Mechanism in Fluorine-Free Metal Organic Decomposition Process" J. Mater. Chem. C, 8, 17417 (2020).<pdf6


  8. T. B. Tran, C.-H. Liao, F. Alqatari, and X. Li, “Demonstration of single-phase wurtzite BAlN with over 20% boron content by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 117, 082102 (2020).<pdf>                             Tinh. APL


  9. X. Tang and X. Li*, “Ripening of gold clusters into single domain on semiconductor quantum rods during Langmuir-Blodgett deposition,” Cryst. Growth Des. 20, 9, 5890 (2020).<pdf>2


  10. R. Lin, X. Liu, K. Liu, Y. Lu, X. Liu, X. Li*, " BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN/AlGaN heterostructures," J. Phys. D: Appl. Phys. 53, 48 (2020).<pdf>3


  11. R. Lin, Z. Alnakhli, F. AlQatari, and X. Li*, “Design of dielectric reflective metalens: analysis of tapered nanopillars,” IEEE Photonics J. 12, 4 (2020).<pdf>4


  12. Y. Zhang, G. Deng, Y. Yu, Y. Wang, D. Zhao, Z. Shi, B. Zhang, X. Li*, “Demonstration of N-polar III-nitride tunnel junction LED,” ACS Photonics 7 (7), 1723 (2020). <pdfACS Photonics 7 (7), 1723 (2020)


  13. I. Ajia, D. Almalawi, Y. Lu, S. Lopatin, X. Li, Z. Liu, and I. Roqan, “Sub-quantum-well influence on carrier dynamics in high efficiency DUV dislocation-free AlGaN/AlGaN-based multiple-quantum-wells,” ACS Photonics 7 (7), 1667 (2020).<pdf6


  14. C. G. Torres-Castanedo, K. H. Li, L. Braic, and X. Li*, “Determination of band offsets of Ga2O3:Si/FTO heterojunction for current spreading for high temperature and UV applications,” J. Phys. D: Appl. Phys. 53, 314003 (2020). <pdf>7


  15. W. Guo, L. Chen, H. Xu, Y. Qian, M. Sheikhi, J. Hoo, S. Guo, L. Xu, J. Liu, F. Alqatari, X. Li, K. He, Z. C. Feng, and J. Ye, “Revealing the surface electronic structures of AlGaN deep ultraviolet multiple-quantum-wells with lateral polarity domains,” Photonics Res. 8, 812 (2020) <pdf>8
  16. W. Wang, J. Chen, J. S. Lundh, S. Shervin, S. K. Oh, S. Pouladi, Z. Rao, J.-Y. Kim, M.-K. Kwon, X. Li, S. Choi, and J.-H. Ryou, "Modulation of the 2-Dimensional Electron Gas Channel in Flexible AlGaN/GaN High-Electron-Mobility Transistors by Mechanical Bending," Appl. Phys. Lett.  116, 123501 (2020). <pdf>9


  17. R. Lin, Y. Zhai, C. Xiong, and X. Li*, “Inverse design of plasmonic metasurfaces by convolutional neural network,” Opt. Lett. 45, 11362 (2020). <pdf>10


  18. J. Hou, B. Yang, X. Li, C. Ma, B. Wang, H. Long, C. Yang, and S. Chen, "Efficient and stable thin film crystalline silicon solar cell by introducing rotation factor in surface square-pillar-array-grating," J. Nanophotonics 14, 016008 (2020). <pdf>11


  19. N. Alfaraj, W. Alghamdi, M. Alawein, I. Ajia, D. Priante, B. Janjua, H. Sun, T. Ng, B. Ooi, I. Roqan, X. Li, "Time–Energy Quantum Uncertainty—Quantifying the Effectiveness of Surface Defect Passivation Protocols for Low-Dimensional Semiconductors," ACS Appl. Electron. Mater. 2020, 409 (2020). <pdf>ACS Appl. Electron. Mater. 2020, 409 (2020)


  20. R. Lin, V. Mazzone, N. Alfaraj, J. Liu, X. Li*, and A. Fratalocchi*, "On‐Chip Hyperuniform Lasers for Controllable Transitions in Disordered Systems," Laser & Photonics Rev. 2020, 1800296 (2020). <pdf>13


  21. Z. Liu, Y. Zhi, S. Li, Y. Liu, X. Tang, Z. Yan, P. Li, X. Li, D. Guo, Z. Wu, and W. Tang, "Comparison of optoelectrical characteristics between Schottky and Ohmic contacts to β-Ga2O3 thin film," J. Phys. D: Appl. Phys. 53, 085105 (2020). <pdf>14


  22. X. Li*, R. D. Dupuis, T. Wernicke, “Semiconductor UV photonics: feature introduction,” Photon. Res. 7, SUVP1 (2019). <pdf>
  23. Q. Chen, J. Dai, X. Li, Y. Gao, H. Long, Z.-H. Zhang, C. Chen, and H.-C. Kuo, “Enhanced optical performance of AlGaN-based deep ultraviolet light-emitting diodes by electrode patterns design,” IEEE Electron Device Lett. 40, 1925 (2019). <pdf>16 
  24. M. Shan, Y. Zhang, T. B. Tran, J. Jiang, H. Long, Z. Zheng, A. Wang, W. Guo, C. Chen, J. Dai, and X. Li, “Deep UV laser at 249 nm based on GaN quantum wells,” ACS Photonics 6, 2387 (2019). <pdf>17


  25. W. Guo, S. Mitra, J. Jiang, H. Xu, M. Sheikhi, H. Sun, K. Tian, Z.-H. Zhang, H. Jiang, I. Roqan, X. Li, and J. Ye, " Three-dimensional band diagram in lateral polarity junction III-nitride heterostructures," Optica 6, 1058 (2019). <pdf>18


  26. M. Garg, A. Kumar, H. Sun, C.-H. Liao, X. Li, and R. Singh, "Temperature dependent electrical studies on Cu/AlGaN/GaN Schottky barrier diodes with its microstructural characterization," J. Alloys Compd. 806, 852 (2019). <pdf>19


  27. R. Lin and X. Li, "Multifocal metalens based on multilayer Pancharatnam-Berry phase elements architecture," Opt. Lett. 44, 2819 (2019). <pdf>20


  28. Y. Lu, J. Yan, X. Li, Y. Guo, Z. Wu, L. Zhang, W. Gu, J. Wang, and J. Li, "On the Carrier Regulation and Performance Enhancement of N-polar AlGaN-based LED with Grading Quantum Barriers," Acta. Phys. Sin. 48, 0723001 (2019). <pdf>21


  29. B. R. Tak, M. Garg, S. Dewan, C. G. Torres-Castanedo, K.-H. Li, V. Gupta, X. Li, and R. Singh, "High-Temperature Photocurrent Mechanism of β-Ga2O3 Based Metal-Semiconductor-Metal Solar-Blind Photodetectors," J. Appl. Phys 125, 144501 (2019). <pdf>22


  30. J. Dai, J. Chen, X. Li, J. Zhang, H. Long, H.-C. Kuo, Y. He, and C. Chen, "Ultraviolet polarized light emitting and detecting dual-functioning device based on nonpolar n-ZnO/i-ZnO/p-AlGaN heterojunction," Opt. Lett. 44(8), 1944 (2019). <pdf>23


  31. Z. Ren, Y. Lu, H. Sun, H.-H. Yao, C.-H. Liao, J. Dai, C. Chen, J.-H. Ryou, J. Yan, J. Wang, J. Li, and X. Li, “III-nitride Deep UV LED without Electron Blocking Layer,” IEEE Photon. J. 11(2), 8200511 (2019). <pdf>24


  32. N. Susilo, M. Schilling, M. Narodovitch, H.-H. Yao, X. Li, B. Witzigmann, J. Enslin, M. Guttmann, M. Rychetsky, I. Koslow, T. Wernicke, T. Niermann., M. Lehmann, and M. Kneissl, "Precise determination of polarization fields in c-plane GaN/AlxGa1−xN/GaN heterostructures with capacitance-voltage-measurements," ‎Jpn. J. Appl. Phys 58, SCCB08 (2019). <pdf>25


  33. D. Priante, M. Tangi, J.-W. Min, N. Alfaraj, J.-W. Liang, H. Sun, H. H. Alhashim, X. Li, A. M. Albadri, A. Y. Alyamani, T. K. Ng, and B. S. Ooi, “Enhanced electro-optic performance of surface-treated nanowires: origin and mechanism of nanoscale current injection for reliable ultraviolet light-emitting diodes,” Opt. Mater. Express. 1, 203 (2019). <pdf>26


  34. C. Kai, X. Sun, Y. Jia, Z. Shi, K. Jiang, J. Ben, Y. Wu, Y. Wang, H. Liu, X. Li, and D. Li, "Carrier behavior in the vicinity of pit defects in GaN character-ized by ultraviolet light-assisted Kelvin probe force microscopy," Sci. China. Phys. Mech. J.  62, 067311 (2019). <pdf>27


  35. H. Sun and X. Li, "Recent Advances on III-Nitride Nanowire Light Emitters on Foreign Substrates – Toward Flexible Photonics," Phys. Status Solidi A 216, 1800420 (2019). <pdf>28


  36. M. Garg, T. Naik, R. Pathak, V. R. Rao, C.-H. Liao, K.-H. Li, H. Sun, X. Li, and R. Singh, "Surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalized-Porphyrin based organic molecules," J. Appl. Phys. 124, 195702 (2018). <pdf>29


  37. H. Sun, Y. J. Park, K.-H. Li, X. Liu, T. Detchprohm, X. Zhang, R. D. Dupuis, and X. Li, “Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application,” Appl. Surf. Sci. 458, 949 (2018). <pdf>30


  38. H. Sun, D. Priante, J.-W. Min, R. C. Subedi, M. K. Shakfa, Z. Ren, K.-H. Li, R. Lin, C. Zhao, T. Ng, J.-H. Ryou, X. Zhang, B. S. Ooi, and X. Li, "Graded-Index Separated Confinement Heterostructure AlGaN Nanowires: Towards Ultraviolet Laser Diodes Implementation," ACS Photonics, 5, 3305 (2018). <pdf>H. Sun,ACS Photonics


  39. S. Singh, S. Shervin, H. Sun, M. Yarali, J. Chen, R. Lin, K.-H. Li, X. Li, J.-H. Ryou, A. Mavrokefalos, "Using Mosaicity to Tune Thermal Transport in Polycrystalline AlN Thin Films," ACS Appl. Mater. Inter. 10, 20085 (2018). <pdf>32


  40. W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, R. Lin, A. Giugni, E. D. Fabrizio, X. Li, and J. Ye, "Lateral-Polarity-Structure of AlGaN Quantum Wells: A Promising Approach for Enhancing the Ultraviolet Luminescence," Adv. Funct. Mater. 28, 1802395 (2018). <pdf><supplementary>33


  41. L. Yan, Y. Zhang, X. Han, G. Deng, P. Li, Y. Yu, L. Chen, X. Li, and J.-F. Song, “Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 112, 182104 (2018). <pdf>34


  42. R. Lin, S. V. Galan, H. Sun, Y. Hu, M. S. Alias, B. Janjua, T. K. Ng, B. S. Ooi, and X. Li, “Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations,” Photon. Res. 6, 124 (2018). <pdf>R. Lin  Photon. Res.


  43. H. Sun, K.-H. Li, C. G. T. Castanedo, S. Okur, G. S. Tompa, T. Salagaj, S. Lopatin, A. Genovese, and X. Li, "HCl flow-induced phase change of α-, β- and ε-Ga2O3 films grown by MOCVD," Cryst. Growth Des. 18, 2370 (2018). <pdf>H. Sun Cryst. Growth Des.


  44. K.-H. Li, H. S. Alotaibi, H. Sun, R. Lin, W. Guo, C. G. Torres, K. Liu, S. V. Galan, and X. Li, “Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling,” J. Cryst. Growth 488, 16 (2018). <pdf>J. Cryst. Growth 488, 16 (2018)


  45. J. Hou, C. Yang, X. Li, Z.-Z. Cao, and S. Chen, “Enhanced complete photonic band gap in moderate refractive index contrast chalcogenide-air system with connected-annular-rods photonic crystals,” Photon. Res 6 (4), 282 (2018). <pdf>38


  46. S. Shervin, S. K. Oh, H. J. Park, K.-H. Lee, M. Asadirad, S.-H. Kim, J. Kim, S. Pouladi, S.-N. Lee, X. Li, J. S. Kwak, and J. H. Ryou “Flexible Deep-Ultraviolet Light-Emitting Diodes for Significant Improvement of Quantum Efficiencies by External Bending,” J. Phys. D: Appl. Phys. 51, 105105 (2018). <pdf>39


  47. H. Sun, M. K. Shakfa, M. Mufasila, B. Janjua, K.-H. Li, R. Lin, I. Roqan,  B. Ooi, and X. Li, "Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes," ACS Photonics 5, 964 (2018). <pdf>ACS Photonics 5, 964 (2018)


  48. H. Sun, F. Wu, Y. J. Park, T. M. Al tahtamouni, W. Guo, N. Alfaraj, K.-H. Li, D. H. Anjum, T. Detchprohm, R. D. Dupuis, and X. Li, “Microstructure revealing and dislocation behavior in BAlN/AlGaN heterostructures,” Appl. Phys. Express 11, 011001 (2018). <pdf>41


  49. N. Alfaraj, M. M. Muhammed, K.-H. Li, B. Janjua, R. A. Aljefri, H. Sun, T. K. Ng, B. S. Ooi, I. S. Roqan, and X. Li, “Thermodynamic photoinduced disorder in AlGaN nanowires,” AIP Adv. 7, 125113 (2017). <pdf>42


  50. K. Liu, H. Sun, F. AlQatari, W. Guo, X. Liu, J. Li, C. G T. Castanedo, and X. Li, "Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering," Appl. Phys. Lett. 111 (22), 222106 (2017). <pdf>43


  51. H. Sun, C. G. T. Castanedo, K. Liu, K.-H. Li, W. Guo, R. Lin, X. Liu, J. Li, and X. Li, “Valence and conduction band offsets of β-Ga2O3/AlN heterojunction,” Appl. Phys. Lett. 111 (16), 162105 (2017). <pdf>44


  52. H. Sun, Y. Park, K.-H. Li, C. G. T. Castanedo, A. S. Alowayed, T. Detchprohm, R. D. Dupuis, and X. Li, “Band alignment of B0.14Al0.86N / Al0.7Ga0.3N heterojunction,” Appl. Phys. Lett. 111 (12), 122106 (2017). <pdf>45


  53. X. Sun, Z. Zhang, A. Chaaban, T. K. Ng, C. Shen, R. Chen, J. Yan, H. Sun, X. Li, J. Wang, J. Li, M.-S. Alouini, and B. S. Ooi, “71-Mbit/s Ultraviolet-B LED Communication Link based on 8-QAM-OFDM Modulation”, Opt. Express 25 (19), 23267 (2017). <pdf>46


  54. J. Hou, W. Hong, X. Li, C. Yang, and S. Chen, “Biomimetic spiral grating for stable and highly efficient absorption in crystalline silicon thin-film solar cells,” Opt. Express 25(20), A922-A931 (2017). <pdf>47


  55. H. Sun, F. Wu, T. M. Al tahtamouni, N. Alfaraj, K.-H. Li, T. Detchprohm, R. D. Dupuis, and X. Li, “Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate,” J. Phys. D: Appl. Phys. 50, 395101 (2017). <pdf>J. Phys. D: Appl. Phys. 50, 395101 (2017)


  56. S. Wang, X. Li, A. M. Fischer, T. Detchprohm, R. D. Dupuis, and F. A. Ponce, “Crystal structure of BAlN thin films: effect of boron concentration in the gas flow,” J. Cryst. Growth 475, 334 (2017). <pdf>49


  57. A. Prabaswara, D. Stowe, B. Janjua, T. K. Ng, D. H. Anjum, P. Longo, C. Zhao, R. T. Elafandy, X. Li, A. Alyamani, M. El-Desouki, and B. S. Ooi, “Spatially resolved investigation of competing nanocluster emission in quantum-disks-in-nanowires structure characterized by nanoscale cathodoluminescence,” J. Nanophoton. 11(2), 026015 (2017). <pdf>50


  58. M. Zhang and X. Li, “Structural and Electronic Properties of Wurtzite BxAl1-xN from First-Principles Calculations”, Phys. Status Solidi B, 254 (8), 1600749 (2017). <pdf>51


  59. F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D: Appl. Phys. 50, 245101 (2017). <pdf> J. Phys. D: Appl. Phys. 50, 245101 (2017)


  60. H. Sun, F. Wu, Y. J. Park, T. M. Al tahtamouni, K.-H. Li, N. Alfaraj, T. Detchprohm, R. D. Dupuis, and X. Li, “Influence of TMAl preflow on AlN epitaxy on sapphire,” Appl. Phys. Lett. 110, 192106 (2017). <pdf>Appl. Phys. Lett. 110, 192106 (2017)


  61. N. Alfaraj, S. Mitra, F. Wu, I. Ajia, B. Janjua, A. Prabaswara, R. A. Aljefri, H. Sun, T. K. Ng, B. S. Ooi, I. S. Roqan, and X. Li, “Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires,” Appl. Phys. Lett. 110, 161110 (2017). <pdf>Appl. Phys. Lett. 110, 161110 (2017)


  62. X. Li, S. Wang, H. Liu, F. A. Ponce, T. Detchprohm, R. D. Dupuis “100-nm thick single-phase wurtzite BAlN films with boron contents over 10%,” Phys. Status Solidi B 254 (8), 1600699 (2017). <pdf>Phys. Status Solidi B 254 (8), 1600699 (2017)


  63. B. Janjua*, H. Sun*, C. Zhao, D. H. Anjum, D. Priante, A. A. Alhamoud, F. Wu, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, and B. S. Ooi, “Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates”, Opt. Express 25, 2 (2017). <pdf>56


  64. B. Janjua*, H. Sun*, C. Zhao, D. H. Anjum, F. Wu, A. A. Alhamoud, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, and B. S. Ooi, “Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy”, Nanoscale 9, 7805 (2017). <pdf>57


  65. X. Li, H. Xie, J. H. Ryou, F. A. Ponce, T. Detchprohm, and R. D. Dupuis, “Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells,” Appl. Phys. Lett. 107, 241109 (2015). <pdf>Appl. Phys. Lett. 107, 241109 (2015)


  66. X. Li, T. T. Kao, M. Satter, S. Wang, Y. Wei, H. Xie, S. C. Shen, P. D. Yoder, A. Fischer, and F. A. Ponce, T. Detchprohm, and R. D. Dupuis, “Demonstration of transverse-magnetic dominant deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers on sapphire substrates,” Appl. Phys. Lett. 106, 041115 (2015). <pdf>Appl. Phys. Lett. 106, 041115 (2015)


  67. X. Li, Y. O. Wei, S. Wang, H. Xie, T. T. Kao, M. Satter, S. C. Shen, P. D. Yoder, T. Detchprohm, R. D. Dupuis, A. Fischer, and F. A. Ponce, “Temperature dependence of crystalline quality of AlN layer grown on sapphire substrate by metalorganic chemical vapor deposition,” J. Cryst. Growth 414, 76-78 (2015). <pdf>J. Cryst. Growth 414, 76-78 (2015)


  68. X. Li, S. Wang, Y. O. Wei, H. Xie, T. T. Kao, M. Satter, S. C. Shen, P. D. Yoder, T. Detchprohm, R. D. Dupuis, A. Fischer, and F. A. Ponce, “Growth of high-quality AlN layer on sapphire substrate at relatively low temperatures by metalorganic chemical vapor deposition,” Phys. Status Solidi B 252(5), 1089 (2015). <pdf>61


  69. X. Li, G. Le Gac, S. Bouchoule, Y. El Gmili, G. Patriarche, S. Sundaram, P. Disseix, F. Réveret, J. Leymarie, J. Streque, F. Genty, J-P. Salvestrini, R. D. Dupuis, X. Li, P. L. Voss, and A. Ougazzaden, “Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm,” J. Cryst. Growth 432, 37 (2015). <pdf>62


  70. X. Li, T. Detchprohm, T. T. Kao, M. Satter, S. C. Shen, P. D. Yoder, R. D. Dupuis, S. Wang, Y. Wei, H. Xie, A. Fischer, F. A. Ponce, T. Wernicke, C. Reich, M. Martens, and M. Kneissl, “Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates,” Appl. Phys. Lett. 105, 141106 (2014). <pdf>63


  71. M. M. Satter, Z. Lochner, T. T. Kao, Y. S. Liu, X. Li, S. C. Shen, J. H. Ryou, R. D. Dupuis, P. D. Yoder. “AlGaN-Based Vertical Injection Laser Diodes Using Inverse Tapered p-Waveguide for Efficient Hole Transport,” IEEE J. of Quantum Electron. 50, 166 (2014). <pdf>64


  72. M. M. Satter, Z. Lochner, T. T. Kao, Y. S. Liu, X. Li, S. C. Shen, J. H. Ryou, R. D. Dupuis, P. D. Yoder. “Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high power opto and microelectronic applications,” Phys. Status Solidi C 11, 828 (2014). <pdf>65


  73. Y. S. Liu, Z. Lochner, T. T. Kao, M. M. Satter, X. Li, J. H. Ryou, S. C. Shen, P. D. Yoder, T. Detchprohm, R. D. Dupuis, Y. Wei, H. Xie, A. Fischer and F. Ponce, “Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates,” Phys. Status Solidi C 11, 258 (2014). <pdf>66


  74. X. Li, P. F. Zhu, G. Y. Liu, J. Zhang, R. B. Song, Y. K. Ee, P. Kumnorkaew, and J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by using 2-D Close-Packed TiO2 Microsphere Arrays,” IEEE J. Display Technol. 9, 5, 324 (2013). <pdf>67


  75. Z. Lochner, X. Li, T. T. Kao, M. Satter, H. J. Kim, S. C. Shen,  P. D. Yoder, A. Fischer, and F. A. Ponce, J. H. Ryou, and R. D. Dupuis, “Stimulated emission at 257 nm from AlGaN/AlN heterostructure on AlN substrate,” Phys. Status Solidi A 210, 9, 1768 (2013). <pdf>68


  76. T. T. Kao, Y. S. Liu, M. M. Satter, X. Li, Z. Lochner, P. D. Yoder, T. Detchprohm, R. D. Dupuis, S. C. Shen, , J. H. Ryou, A. M. Fischer,Y. Wei, H. Xie, F. A. Ponce, “Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors,” Appl. Phys. Lett. 103, 211103 (2013). <pdf>69


  77. Z. Lochner, T. T. Kao, Y. S. Liu, X. Li, M. M. Satter, S. C. Shen, P. D. Yoder, J. H. Ryou, R. D. Dupuis, “Deep-Ultraviolet Lasing at 243 nm from Photo-Pumped AlGaN/AlN Heterostructure on AlN Substrate,” Appl. Phys. Lett. 102, 101110 (2013). <pdf>70


  78. C. K. Tan, J. Zhang, X. Li, G. Y. Liu, B. O. Tayo, and N. Tansu, “First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters,” IEEE J. Display Technol. 9, 4, 272 (2013). <pdf>71


  79. W. H. Koo, W. Youn, P. F. Zhu, X. Li, N. Tansu, and F. So, “Light extraction of organic light emitting diodes using defective hexagonal-close-packed array,” Adv. Funct. Mater. 22, 3454 (2012). <pdf>72


  80. G. Y. Liu, J. Zhang, X. Li, G. S. Huang, T. Paskova, K. R. Evans, H. P. Zhao, and N. Tansu, “Metalorganic Vapor Phase Epitaxy and Characterizations of Nearly-Lattice-Matched AlInN Alloys on GaN / Sapphire Templates and Free-Standing GaN Substrates,” J. Cryst. Growth 340, 66 (2011). <pdf>73


  81. W. Cao, J. Biser, Y. K. Ee, X. Li, N. Tansu, H. M. Chan, and R. P. Vinci, “Dislocation structure of GaN films grown on planar and nano-patterned sapphire,” J. Appl. Phys. 110, 053505 (2011). <pdf>74


  82. X. Li, R. B. Song, Y. K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes with Colloidal Microlens Arrays with Various Aspect Ratios,” IEEE Photon. J. 3, 3, 489 (2011). <pdf>75


  83. N. Tansu, H. P. Zhao, G. Y. Liu, X. Li, J. Zhang, H. Tong, and Y. K. Ee, “Breakthrough in Photonics 2009: III-N Photonics,” IEEE Photon. J. 2, 236 (2010). <pdf>76


  84. X. Li, H. Tong, H. Zhao, and N. Tansu, “Band Structure Calculation of Dilute-As GaNAs by First Principle,” Proc. of the SPIE Photonics West 7597, 75970H1 (2010). <pdf>77


  85. Y. K. Ee, X. Li, J. E. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE Nucleation Studies of III-Nitride Light-Emitting Diodes on Nano-Patterned Sapphire,” J. Crys. Growth 312, 1311 (2010). <pdf>78


  86. H. Zhao, G. Liu, X. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, “Design and Characteristics of Staggered InGaN Quantum Well Light-Emitting Diodes in Green Spectral Regimes” IET Optoelectron. 3, 283 (2009). <pdf>79


  87. H. P. Zhao, G. Y. Liu, X. Li, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, “Growths of Staggered InGaN Quantum Wells Light-Emitting Diodes Emitting at 520-525 nm Employing Graded Growth-Temperature Profile,” Appl. Phys. Lett. 95, 061104, (2009). <pdf>80


Works Featured in Media

    1. "Reducing the loss of light at the surface of semiconductor nanostructures,"
    2. "KAUST And SMI Show One-step Tuning Of Gallium Oxide Phases," Compound Semiconductor
    3. "Cleaning nanowires to get out more light," KAUST Discovery
    4. "Fine tuning boron content in nitride alloys," Semiconductor Today
    5. "Taking control at the junction," KAUST Discovery
    6. KAUST Team Cleans Nanowires For More Efficient UVLEDs,” Compound Semiconductor
    7. "KAUST/Georgia Tech team determines band alignment at BAlN/AlGaN heterojunction," Semiconductor Today
    8. KAUST Predicts Polarisation-free III-nitride Heterojunctions On C-plane,” Compound Semiconductor
    9. Researchers Determine Electronic Properties of Interface Between Two Wide Bandgap Semiconductors,” AZO Materials
    10. Semiconductors with an aligned interface,” & KAUST Discovery & Nanowerk
    11. Researchers Discover Unique BAlN Properties,” Compound Semiconductor
    12. KAUST Team Reports Record-breaking UV LED Comms,” Compound Semiconductor
    13.  “Keeping the heat out,” KAUST Discovery
    14. Researchers Reveal Secrets Of Metalorganic Preflow For AlN MOCVD Process,” Compound Semiconductor     
    15. Faculty Focus: Xiaohang Li,” KAUST News                                                                                                      
    16. KAUST Team Reveals Thermodynamic Disorder In GaN-based Nanowires,” Compound Semiconductor   
    17. Thermodynamic disorder in GaN-based nanowires,” Nanowerk     
    18. Researchers Simplify Fabrication Of Nanowire UV-LEDs On Silicon,” Compound Semiconductor            
    19. UV LEDs: solving the droop issue,” EE Times Europe                                                                           
    20. KAUST Team Grows Droop-Free UVLEDs On Metal/Silicon Substrate,” Compound Semiconductor        
    21. Growing thicker, more boron rich BAlN,” Compound Semiconductor        
    22. Sapphire substrates slash the cost of deep UV lasers,” Editorial of Compound Semiconductor