We will discuss the solution of eigenvalue problems associated with partial differential equations (PDE)s that can be written in the generalised form Ax = λMx, where the matrices A and/or M may depend on a scalar parameter. Parameter dependent matrices occur frequently when stabilised formulations are used for the numerical approximation of PDEs. With the help of classical numerical examples we will show that the presence of one (or both) parameters can produce unexpected results.

Hessian-dependent functionals play a pivotal role in a wide latitude of problems in mathematics. Arising in the context of differential geometry and probability theory, this class of problems find applications in the mechanics of deformable media (mostly in elasticity theory) and the modelling of slow viscous fluids. We study such functionals from three distinct perspectives.

We present a theoretical analysis of the Weak Adversarial Networks (WAN) method, recently proposed in [1, 2], as a method for approximating the solution of partial differential equations in high dimensions and tested in the framework of inverse problems. In a very general abstract framework.

Analogies between financial markets and critical phenomena have long been observed empirically. So far, no convincing theory has emerged that can explain these empirical observations. Here, we take a step towards such a theory by modeling financial markets as a lattice gas.

Wave propagation and scattering problems are of huge importance in many applications in science and engineering - e.g., in seismic and medical imaging and more generally in acoustics and electromagnetics.

In this short course, we will introduce some elements in deriving the hp a posteriori error estimate for a high-order unfitted finite element method for elliptic interface problems. The key ingredient is an hp domain inverse estimate, which allows us to prove a sharp lower bound of the hp a posteriori error estimator.

In my lecture, I will share personal insights on transitioning from academia to management consulting and creating startups. I will discuss how to assess if a career in management consulting suits your goals and skills, and provide practical advice on interviewing successfully with consulting firms.

In this talk, I will be talking about β-Ga2O3 based monolithically integrated logic circuits and flash memory devices toward extreme environment operations. Moreover, the important challenges in material and device fabrication for realizing this technology will be discussed. Finally, I will introduce the promises of β-Ga2O3 at low-temperature (~ 4 K) operation for space electronics applications.

Abstract

The inclusion of boron in III-Nitride semiconductors is an exc

Abstract

In this talk, we will discuss the m

In this talk, an overview of the general strategies and associated sublimation reactors to grow AlN crystals by PVT method will be given. Particular interests are focused on different AlN growth strategies for large-size AlN crystal growth, and the advantages and disadvantages of these growth strategies will also be addressed in great detail.

Flexible electronics is an emerging and widely explored area.  Most research groups in the area focus on fabrication processes to provide mechanical flexibility and their use in bendable and stretchable applications.  Also, most semiconductors employed in flexible electronics are non-single-crystalline thin films which compromise the performance of the flexible devices.

The Compound Semiconductor Weekend will focus on some of the most important research areas on the beautiful KAUST campus by the Red Sea. It features 18 invited and contributed oral talks and a poster competition. Semiconductor technology is a major foundation of the third and fourth Industrial Revolutions as well as the modern society. While silicon remains as the widest-employed semiconductor, compound semiconductors have emerged from lab research to becoming the second most widely used within a short period of time. This is because compound semiconductors could possess multiple superior key properties simultaneously. They include high speed, high power, and efficient light emission and absorption, as well as that they can be produced in large scale at low cost and are highly robust. As a result, they have become cornerstones of many crucial technologies including lighting, display, communication, space exploration, and electric vehicles. While semiconductor researchers are plowing deeper for those technologies, compound semiconductors attract increasing attention for future computing, memory, and quantum information science as the pursuit of Moore’s Law has slowed down dramatically when the size of silicon transistors is approaching the physical limit of a few atoms.

Wide bandgap (WBG) semiconductors including GaN have demonstrated great success in lighting, display, electrification, and 5G communication due to superior properties and decades of R&D. Lately, the III-nitride and III-oxide ultrawide bandgap (UWBG) semiconductors with bandgap larger than GaN have attracted increasing attentions. They are regarded as the 4th wave of the inorganic semiconductors after the consequential Si, III-V, and WBG semiconductors. Because the UWBG along with other properties could enable electronics and photonics to operate with significantly greater power and frequency capability and at much shorter far−deep UV wavelengths, crucial for sustainability and health of the human society. Besides, they could be employed for the revolutionary quantum information science as the host and photonic platform. This seminar would cover the latest research by the Advanced Semiconductor Lab. It includes multi-disciplinary studies of growth, materials, physics, and devices of the UWBG semiconductors.

In this seminar, the approaches for improving the efficiency of AlGaN based DUV emitters will be presented. The high-temperature metal organic chemical vapor deposition system has been used to grow high-quality AlGaN based epi-layers and nanostructure on the sapphire substrate.

Katharina Lorenz's main research interests are the doping of WBS with optically active ions and the study of radiation effects in WBS materials for radiation detectors and radiation resistant electronics.

Brief Biography

Education:

Prof. Dr. Guo received B. E., M.E., and Dr. E degrees in electronic engineering from Toyohashi University of Technology in 1990, 1992, and 1996, respectively. He is currently a Professor of Department of Electrical and Electronic Engineering, Saga University as well as Director of Saga University Synchrotron Light Application Center. His research interests include epitaxial growth and characterization of semiconductor materials. Prof. Guo has published more than 300 papers in scientific journals including Nature Communications, Advanced Materials, Physical Review B, and Applied Physics Letters with more than 7200 citations (h-index: 43).

Dr. Jun Chen is currently an assistant professor in the Department of Bioengineering, University of California, Los Angeles. His current research focuses on nanotechnology and bioelectronics for energy, sensing, environment and therapy applications in the form of smart textiles, wearables, and body area sensor networks.

Dr. Ping Chen now works as a full Professor in the Institute of Semiconductors, Chinese Academy of Sciences (Beijing China). He received his bachelor’s degree of Physics from the University of Science and Technology of China (USTC) in 2003, and doctor’s degree of Microelectronics and Solid State Electronics from the Graduate School in University of Chinese Academy of Sciences in 2008. He worked in Georgia Institute of Technology (Atlanta, GA) as a Visiting Scholar from 2017 to 2019.

Dr. Naresh Chand is a Life Fellow of IEEE, Associate Vice President, Chapter Relations of the IEEE Photonics Society, and the Chair, Photonics Society, North Jersey Chapter. Dr. Naresh Chand was previously with US R&D Center of Huawei Technologies in NJ in 2011-2019 where he was working on developing low-cost advanced technologies for Ultra Broadband Optical Access Networks. Prior to this, he worked for BAE Systems (2003-11), Agere Systems and AT&T/Lucent Bell Laboratories (1986-2003), and Dept of Electronics, Government of India (1974-79).

Dr. Rajendra Singh is presently a Professor at the Department of Physics, IIT Delhi. He did M.Sc. (Physics) from D.B.S. College, Dehra Dun (affiliated to H.N.B. Garhwal University) in 1995. After that he joined Inter University Accelerator Centre (formerly Nuclear Science Centre), New Delhi for Ph.D. His Ph.D. work was related to the study of the effect of swift heavy ion irradiation on electrical properties of Si and GaAs. He completed his Ph.D. in 2001 with degree from Jawaharlal Nehru University, New Delhi. He then joined Walter Schottky Institute (WSI), Technical University of Munich (TUM), Germany as a post doctoral fellow. There he worked on the design, fabrication and characterization of InP-based heterojunction bipolar transistors (HBTs). He extensively used Class 100 Cleanroom facilities at WSI working on various processing tools such as photolithography, wet etching, reactive ion etching, UHV metallization and rapid thermal annealing. In January 2004 he joined the Max Planck Institute of Microstructure Physics, Halle, Germany as a post doctoral fellow. There he worked in the area of direct wafer bonding and layer splitting of semiconductors for the fabrication of silicon-on-insulator (SOI) and strained silicon-on-insulator (sSOI). He worked in a Class 10 Cleanroom facility at MPI Halle using processing tools such as wet benches, wafer bonding system, plasma enhanced chemical vapour deposition (PECVD) and annealing furnaces.

Prof. Hieu Nguyen received the B.S. degree in Physics from Vietnam National University in Ho Chi Minh City, Vietnam (2005), the M.S. degree in Electronics Engineering from Ajou University, South Korea (2009), and the PhD. degree in Electrical Engineering from McGill University, Canada (2012). In September 2014, he joined the Electrical and Computer Engineering Department, New Jersey Institute of Technology. He has authored/co-authored 1 book chapter, 1 patent, 48 journal articles, and more than 70 conference presentations.

No summary is available.

Dr. Jing Zhang is currently the Kate Gleason Endowed Assistant Professor in the Department of Electrical and Microelectronic Engineering at Rochester Institute of Technology. She obtained B.S. degree in Electronic Science and Technology from Huazhong University of Science and Technology (2009), and Ph.D. degree in Electrical Engineering from Lehigh University (2013). Dr. Zhang’s research focuses on developing highly efficient III-Nitride and GaO semiconductor based photonic, optoelectronic, and electronic devices. Her research group is working on the development of novel quantum well active regions and substrates for enabling high-performance ultraviolet and visible LEDs/ lasers, as well as engineering of advanced device concepts for nanoelectronics.