Dr. Byeongchan So, Postdoctoral researcher / Ph.D. Department of Nano-Semiconductor Engineering, ​Korea Polytechnic University
Thursday, August 13, 2020, 15:00
- 16:00
https://kaust.zoom.us/j/2377519260
Contact Person
In this seminar, the approaches for improving the efficiency of AlGaN based DUV emitters will be presented. The high-temperature metal organic chemical vapor deposition system has been used to grow high-quality AlGaN based epi-layers and nanostructure on the sapphire substrate.
Prof. Katharina Lorenz, Instituto Superior Técnico, University of Lisbon
Thursday, July 23, 2020, 16:00
- 17:30
https://kaust.zoom.us/j/2377519260
Contact Person
Katharina Lorenz's main research interests are the doping of WBS with optically active ions and the study of radiation effects in WBS materials for radiation detectors and radiation resistant electronics.
Prof. Qixin Guo, Department of Electrical and Electronic Engineering, Saga University
Thursday, July 09, 2020, 09:00
- 10:30
https://kaust.zoom.us/j/2377519260
Contact Person
Prof. Dr. Guo received B. E., M.E., and Dr. E degrees in electronic engineering from Toyohashi University of Technology in 1990, 1992, and 1996, respectively. He is currently a Professor of Department of Electrical and Electronic Engineering, Saga University as well as Director of Saga University Synchrotron Light Application Center. His research interests include epitaxial growth and characterization of semiconductor materials. Prof. Guo has published more than 300 papers in scientific journals including Nature Communications, Advanced Materials, Physical Review B, and Applied Physics Letters with more than 7200 citations (h-index: 43).
Jun Chen, Department of Bioengineering, University of California Los Angeles
Monday, June 29, 2020, 19:00
- 20:30
https://kaust.zoom.us/j/2377519260
Contact Person
Dr. Jun Chen is currently an assistant professor in the Department of Bioengineering, University of California, Los Angeles. His current research focuses on nanotechnology and bioelectronics for energy, sensing, environment and therapy applications in the form of smart textiles, wearables, and body area sensor networks.
Prof Ping Chen, Institute of Semiconductor, Chinese Academy of Sciences
Tuesday, June 16, 2020, 16:00
- 17:00
https://kaust.zoom.us/j/93243111120
Contact Person
Dr. Ping Chen now works as a full Professor in the Institute of Semiconductors, Chinese Academy of Sciences (Beijing China). He received his bachelor’s degree of Physics from the University of Science and Technology of China (USTC) in 2003, and doctor’s degree of Microelectronics and Solid State Electronics from the Graduate School in University of Chinese Academy of Sciences in 2008. He worked in Georgia Institute of Technology (Atlanta, GA) as a Visiting Scholar from 2017 to 2019.
Dr. Naresh Chand, Life Fellow of IEEE, Associate Vice President, Chapter Relations of the IEEE Photonics Society
Tuesday, June 09, 2020, 16:00
- 17:30
https://kaust.zoom.us/j/2377519260
Contact Person
Dr. Naresh Chand is a Life Fellow of IEEE, Associate Vice President, Chapter Relations of the IEEE Photonics Society, and the Chair, Photonics Society, North Jersey Chapter. Dr. Naresh Chand was previously with US R&D Center of Huawei Technologies in NJ in 2011-2019 where he was working on developing low-cost advanced technologies for Ultra Broadband Optical Access Networks. Prior to this, he worked for BAE Systems (2003-11), Agere Systems and AT&T/Lucent Bell Laboratories (1986-2003), and Dept of Electronics, Government of India (1974-79).
Prof. Rajendra Singh, Indian Institute of Technology Delhi
Friday, June 05, 2020, 16:00
- 17:30
https://kaust.zoom.us/j/2377519260
Contact Person
Dr. Rajendra Singh is presently a Professor at the Department of Physics, IIT Delhi. He did M.Sc. (Physics) from D.B.S. College, Dehra Dun (affiliated to H.N.B. Garhwal University) in 1995. After that he joined Inter University Accelerator Centre (formerly Nuclear Science Centre), New Delhi for Ph.D. His Ph.D. work was related to the study of the effect of swift heavy ion irradiation on electrical properties of Si and GaAs. He completed his Ph.D. in 2001 with degree from Jawaharlal Nehru University, New Delhi. He then joined Walter Schottky Institute (WSI), Technical University of Munich (TUM), Germany as a post doctoral fellow. There he worked on the design, fabrication and characterization of InP-based heterojunction bipolar transistors (HBTs). He extensively used Class 100 Cleanroom facilities at WSI working on various processing tools such as photolithography, wet etching, reactive ion etching, UHV metallization and rapid thermal annealing. In January 2004 he joined the Max Planck Institute of Microstructure Physics, Halle, Germany as a post doctoral fellow. There he worked in the area of direct wafer bonding and layer splitting of semiconductors for the fabrication of silicon-on-insulator (SOI) and strained silicon-on-insulator (sSOI). He worked in a Class 10 Cleanroom facility at MPI Halle using processing tools such as wet benches, wafer bonding system, plasma enhanced chemical vapour deposition (PECVD) and annealing furnaces.
Prof Hieu Nguyen, Electrical and Computer Engineering, New Jersey Institute of Technology
Friday, May 29, 2020, 18:00
- 19:00
https://kaust.zoom.us/j/98892204873
Contact Person
Prof. Hieu Nguyen received the B.S. degree in Physics from Vietnam National University in Ho Chi Minh City, Vietnam (2005), the M.S. degree in Electronics Engineering from Ajou University, South Korea (2009), and the PhD. degree in Electrical Engineering from McGill University, Canada (2012). In September 2014, he joined the Electrical and Computer Engineering Department, New Jersey Institute of Technology. He has authored/co-authored 1 book chapter, 1 patent, 48 journal articles, and more than 70 conference presentations.
Prof. Baishakhi Mazumder, Department of Materials Design and Innovation, School of Engineering and Applied Sciences, University at Buffalo
Friday, May 22, 2020, 16:00
- 17:00
https://kaust.zoom.us/j/96245540544
Contact Person
No summary is available.
Prof. Jing Zhang, Electrical and Microelectronic Engineering, Rochester Institute of Technology
Friday, May 15, 2020, 21:00
- 22:00
https://kaust.zoom.us/j/93387531521
Contact Person
Dr. Jing Zhang is currently the Kate Gleason Endowed Assistant Professor in the Department of Electrical and Microelectronic Engineering at Rochester Institute of Technology. She obtained B.S. degree in Electronic Science and Technology from Huazhong University of Science and Technology (2009), and Ph.D. degree in Electrical Engineering from Lehigh University (2013). Dr. Zhang’s research focuses on developing highly efficient III-Nitride and GaO semiconductor based photonic, optoelectronic, and electronic devices. Her research group is working on the development of novel quantum well active regions and substrates for enabling high-performance ultraviolet and visible LEDs/ lasers, as well as engineering of advanced device concepts for nanoelectronics.
Prof. Jae-Hyun Ryou, Mechanical Engineering, Texas Center for Superconducitity
Friday, May 01, 2020, 16:00
- 17:00
https://kaust.zoom.us/j/94419715768
Contact Person
Friday, November 29, 2019, 08:00
- 18:00
KAUST Main Library, Level 3, Room 3118
Contact Person
The fast-developing wide bandgap semiconductor technologies have created hundred-billion-dollar market globally and are crucial for numerous critical areas in Saudi Arabia including water security, lighting, power supply, communication, and nuclear management. This workshop features distinguished speakers from more than 15 leading research institutions and a poster competition. It will serve as a bridge to strengthen the connections of KAUST with Asia for collaboration opportunities in research, development, and commercialization of wide bandgap semiconductor technologies. View the agenda here.
Prof. Jing Li, Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University
Wednesday, November 27, 2019, 16:30
- 17:30
Building 3, Level 2, Room 2255
Contact Person
Recently, surface plasmon resonance (SPR) effect has been widely applied in wide-band-gap semiconductor materials (e.g. GaN, ZnO or TiN etc.) for emission enhancement, absorption regulation, sensitive bio- or chemical detections and so on. In this talk, different metal (Ag or Al) nanostructures were introduced into and successfully fabricated on several kinds of wide-band-gap semiconductor materials, including ZnO, AlGaN, TiN, and h-BN by template-based nanosphere lithography method and deposition techniques.