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Works Featured in Media
- "Reducing the loss of light at the surface of semiconductor nanostructures," Phys.org
- "KAUST And SMI Show One-step Tuning Of Gallium Oxide Phases," Compound Semiconductor
- "Cleaning nanowires to get out more light," KAUST Discovery
- "Fine tuning boron content in nitride alloys," Semiconductor Today
- "Taking control at the junction," KAUST Discovery
- “KAUST Team Cleans Nanowires For More Efficient UVLEDs,” Compound Semiconductor
- "KAUST/Georgia Tech team determines band alignment at BAlN/AlGaN heterojunction," Semiconductor Today
- “KAUST Predicts Polarisation-free III-nitride Heterojunctions On C-plane,” Compound Semiconductor
- “Researchers Determine Electronic Properties of Interface Between Two Wide Bandgap Semiconductors,” AZO Materials
- “Semiconductors with an aligned interface,” Phys.org & KAUST Discovery & Nanowerk
- “Researchers Discover Unique BAlN Properties,” Compound Semiconductor
- “KAUST Team Reports Record-breaking UV LED Comms,” Compound Semiconductor
- “Keeping the heat out,” KAUST Discovery
- “Researchers Reveal Secrets Of Metalorganic Preflow For AlN MOCVD Process,” Compound Semiconductor
- “Faculty Focus: Xiaohang Li,” KAUST News
- “KAUST Team Reveals Thermodynamic Disorder In GaN-based Nanowires,” Compound Semiconductor
- “Thermodynamic disorder in GaN-based nanowires,” Nanowerk
- “Researchers Simplify Fabrication Of Nanowire UV-LEDs On Silicon,” Compound Semiconductor
- “UV LEDs: solving the droop issue,” EE Times Europe
- “KAUST Team Grows Droop-Free UVLEDs On Metal/Silicon Substrate,” Compound Semiconductor
- “Growing thicker, more boron rich BAlN,” Compound Semiconductor
- “Sapphire substrates slash the cost of deep UV lasers,” Editorial of Compound Semiconductor