Works Featured in Media

1. "Reducing the loss of light at the surface of semiconductor nanostructures," Phys.org
2. "KAUST And SMI Show One-step Tuning Of Gallium Oxide Phases," Compound Semiconductor
3. "Cleaning nanowires to get out more light," KAUST Discovery
4. "Fine tuning boron content in nitride alloys," Semiconductor Today
5. "Taking control at the junction," KAUST Discovery
6. “KAUST Team Cleans Nanowires For More Efficient UVLEDs,” Compound Semiconductor
7. "KAUST/Georgia Tech team determines band alignment at BAlN/AlGaN heterojunction," Semiconductor Today
8. “KAUST Predicts Polarisation-free III-nitride Heterojunctions On C-plane,” Compound Semiconductor
9. “Researchers Determine Electronic Properties of Interface Between Two Wide Bandgap Semiconductors,” AZO Materials
10. “Semiconductors with an aligned interface,” Phys.org & KAUST Discovery & Nanowerk
11. “Researchers Discover Unique BAlN Properties,” Compound Semiconductor
12. “KAUST Team Reports Record-breaking UV LED Comms,” Compound Semiconductor
13.  “Keeping the heat out,” KAUST Discovery
14. “Researchers Reveal Secrets Of Metalorganic Preflow For AlN MOCVD Process,” Compound Semiconductor     
15. “Faculty Focus: Xiaohang Li,” KAUST News                                                                                                      
16. “KAUST Team Reveals Thermodynamic Disorder In GaN-based Nanowires,” Compound Semiconductor   
17. “Thermodynamic disorder in GaN-based nanowires,” Nanowerk     
18. “Researchers Simplify Fabrication Of Nanowire UV-LEDs On Silicon,” Compound Semiconductor            
19. “UV LEDs: solving the droop issue,” EE Times Europe                                                                           
20. “KAUST Team Grows Droop-Free UVLEDs On Metal/Silicon Substrate,” Compound Semiconductor        
21. “Growing thicker, more boron rich BAlN,” Compound Semiconductor        
22. “Sapphire substrates slash the cost of deep UV lasers,” Editorial of Compound Semiconductor