semiconductors

AI for Chips and Chips for AI

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B9 L2 R2325

This seminar presents a unified "AI for Chips & Chips for AI" approach, demonstrating how AI enhances semiconductor design while specialized silicon accelerates AI computation, creating a rapid innovation cycle.

Design and Process Development of Graphene-Based Geometric Diodes for Enhanced Performance

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B2 L5 R5220

This thesis advances graphene geometric diodes (GGDs) by addressing fabrication, performance, and design challenges using innovative nanofabrication techniques and artificial intelligence-enhanced computational methodologies.
optoelectronic device can adapt to light

Artificial neurons enable neuromorphic computing with light

1 min read ·
An adaptive capacitor that can sense and learn through optical stimuli enables learning and recognition tasks.

Study of III-nitride Nanowire Growth and Devices on Unconventional Substrates

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B3 L5 R5209

This thesis aims to investigate the microscopic characteristics of the nanowires and expand on the possibility of using transparent amorphous substrate for III-nitride nanowire devices. In this work, we performed material growth, characterization, and device fabrication of III-nitride nanowires grown using molecular beam epitaxy on unconventional substrates including silicon substrates and fused silica substrates. We also investigated the effect of various nucleation layers on the morphology and quality of the nanowires.

Hybrid integration of materials for ultraviolet detection

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B9 L2 H1 R2322

Semiconductors are pervasive in consumer electronics and optoelectronics, and the related optical devices are deemed disruptive that Nobel Prize in Physics in 2014 was awarded to the inventors of blue light-emitting diodes (LEDs), which “has enabled bright and energy-saving white light sources”. While AlInGaN-based lasers and LEDs, and silicon-based photodetectors are currently matured, unconventional usage based on the materials has demonstrated their further potential, including solar-hydrogen generation, indoor-horticulture, and high-speed communication.

The fourth wave: ultrawide bandgap compound semiconductors for photonics and electronics

Xiaohang Li, Assistant Professor, Electrical and Computer Engineering

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KAUST

Wide bandgap (WBG) compound semiconductors including GaN have shown enormous success in solid-state lighting, display, and electrification in recent decades due to superior properties such as direct bandgap, high electron mobility, and large breakdown field. They have been changing the world by elevating living standards and addressing grand challenges such as global warming. The pioneering researchers have been recognized by numerous accolades including the Nobel Prize and most recently, the Queen Elizabeth Prize. Lately, the III-nitride and III-oxide ultrawide bandgap (UWBG) compound semiconductors with bandgap larger than 3.4 eV have attracted increasing attentions: they have been regarded as the 4th wave/generation after the consequential Si, III-V, and WBG semiconductors. Because the UWBG along with other properties could enable electronics and photonics to operate with significantly greater power and frequency capability and at much shorter far−deep UV wavelengths, respectively, both crucial for human society. Besides, they could be employed for the revolutionary quantum information science as the host and photonic platform. However, extensive multi-disciplinary studies of growth, materials, physics, and devices are essential to unearth the potentials due to the infancy. This seminar would cover the latest research on those aspects. It includes growth of state-of-the-art materials, discovery of unique material properties, and development of a widely adopted device physics framework for photonics and electronics especially short and long wavelength photonic devices.

Building crystals on a very hot surface

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An innovative chemical reactor for depositing semiconductors at very high temperatures draws on the strength of Saudi Arabia’s chemical industry.

Controlling the crystal structure of gallium oxide

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Precise control of the atomic structure of gallium oxide layers improves the development of high-power electronic devices.

KAUST Professor Kazuhiro Ohkawa elected Fellow of the Japan Society of Applied Physics

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By David Murphy, KAUST News KAUST Professor of Electrical Engineering Kazuhiro Ohkawa was recently elected as a Fellow of the Japan Society of Applied Physics (JSAP). The JSAP was established in 1930 as a voluntary forum for applied physics researchers in the country. Ohkawa's JSAP peers recognized him for his exceptional contributions to the progression of applied physics and his specific contribution to the "development of wide bandgap semiconductor epitaxial growth and optical devices," JSAP stated. "It is a great honor for me to be elected as a Fellow of the JSAP," Ohkawa noted. "The

Meet KAUST prospective student: Haoliang Lu

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Haoliang Lu, 22, is an electrical engineering graduate who will join KAUST from the University of Electronic Science and Technology, China. Haoliang will join KAUST in the fall of 2020 as a M.S./Ph.D. candidate, and member of the Integrated Circuits and Systems (ICS) research group, under the supervision of Professor Hossein Fariborzi.

Meet KAUST prospective student: Jose Manuel Taboada Vasquez

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Jose Manuel Taboada Vasquez is a B.Sc. graduate in nanoscience and nanotechnology from the National Autonomous University of Mexico (UNAM), Mexico. He will join KAUST in the fall of 2020 as a M.S./Ph.D. candidate, and member of the Advanced Semiconductor Laboratory under the supervision of Professor Xiaohang Li.

Meet KAUST prospective student: Zhiyuan Liu

1 min read ·
Zhiyuan Liu, 22, is an electrical engineering graduate from the University of Electronic Science and Technology of China, China. Zhiyuan will join KAUST in the fall of 2020 as a M.S./Ph.D. candidate and member of the Advanced Semiconductor Laboratory under the supervision of Professor Xiaohang Li.

Meet KAUST prospective student: Dhanu Chettri

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Dhanu Chettri holds a master’s degree in electronic and communication engineering from Manipur University, India. Before joining KAUST, he worked as a senior project fellow at Council of Scientific and Industrial Research-Central Electronics Engineering Research Institute (CSIR-CEERI). Dhanu will join KAUST this fall as a Ph.D. candidate and member of the Advanced Semiconductor Laboratory under the supervision of Professor Xiaohang Li.

Making the shift from blue to red for better LEDs

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Pure red-light micrometer-scale emitting devices made from a nitride semiconductor reaches excellent efficiency.

Ram Chandra Subedi

Ram Chandra Subedi (RC) is a Ph.D. student at Photonics Lab under the supervision of Professor Boon Ooi at King Abdullah University of Science and Technology (KAUST). He received his B.Sc. and M.Sc. in Physics from Tribhuvan University, Nepal in 2009 and 2011 respectively. In addition, he received his M.S. in the Experimental Condensed Matter Physics University of Georgia, Athens (UGA in 2016). During his stay at UGA, he worked as a Teaching/Research Assistant. His research at UGA was primarily focused on polymer/ small molecule-based Organic Light-Emitting Diodes (OLEDs) and Organic Spin

Heng Wang

Ph.D. student in Electrical and Computer Engineering at KAUST with expertise in nanofabrication, electron beam lithography, and nanodevices. Focused on graphene-based geometric diodes.

Haoliang Lu

Haoliang Lu is an M.S./Ph.D. candidate in the KAUST Integrated Circuits and Systems (ICS) research group, under the supervision of Professor Hossein Fariborzi. Before joining KAUST, Haoliang obtained a bachelor's degree in electrical engineering from the University of Electronic Science and Technology of China. Research Intterests Haoliang's research interests mainly focus on magnetic materials and semiconductor materials.

Davide Priante

Davide Priante obtained his Ph.D. and Master's degree in Electrical Engineering under the supervision of Professor Boon Ooi at King Abdullah University of Science and Technology (KAUST). Davide received his B.Sc. degree in Material Science Engineering from the University of Padova, Italy, in 2013. He joined KAUST in February 2014 as an M.S. to a Ph.D. student in Photonics Laboratory in the Computer, Electrical, and Mathematical Sciences & Engineering (CEMSE) Division. He received his MSc degree in August 2015 with a thesis based on the recombination mechanism of CH3NH3PbBr3 perovskite. Davide